Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures

A reproducible terahertz (THz) photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH_3OH gas laser with the frequency 2. 54THz.The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. This indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition. The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm2/(V · s) at room temperature and 11588cm2/(V· s) at 80K with almost equal 2DEG concentrations of about 1.03 × 1013 cm-2 High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis. Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0. 27nm for a scan area of 10μm × 10μm. HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures. A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained.

RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content

A Si doped AlGaN/GaN HEMT structure with high Al content (x= 44%) in the barrier layer is grown on sapphire substrate by RF-MBE. The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement, respectively. The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.fabricated and characterized. Better DC characteristics, maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer. The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized. The HEMT materials have a mobility of 1035cm~2/(V ? s) at sheet electron concentration of 1.0 * 10~(13)cm~(-2) at room temperature. For the de-vices fabricated using the malt-rials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic iransecmductance of IHfimS/mm are obtained on devices with gate length and width of l/-im and 80/im respectively. The f_t, unit-current-gain frequency of the devices,is about 18. 8GHz.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. The on-current (I-ON) and off-current (I-OFF) of the fabricated silicon nanowire FET are 0.59 mu A and 0.19 nA respectively. The subthreshold swing (SS) and the drain induced barrier lowering are 580 mV/dec and 149 mVN respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. The nanowire width dependence of SS is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. It seems the nanowire number in a channel has no effect on SS because the side-gate parts fill in the space between two adjacent nanowires.

Fano effect on shot noise through a Kondo-correlated quantum dot

Transport in a semiopen Kondo- correlated quantum dot is mediated through more than one quantum state. Using the Keldysh technique and the equation of motion method, we study the shot noise S for a wide range of source- drain voltages V-sd within a model incorporating the additional states as a background continuum, demonstrating the importance of the Fano interference. In the absence of the interference, the noise is revealed to be a probe of the second moment of the local density of states, and our theory reproduces the well- known peak structure around the Kondo temperature in the S-V-sd curve. More significantly, it is found that taking account of the background transmission, the voltage dependence of the noise exhibits rich peak- dip line shapes, indicating the presence of the Fano effect. We further demonstrate that due to its two- particle nature, the noise is more sensitive to the quantum interference effect than the simple current.

Switch-on transient behavior of vanadium phthalocyanine based organic transistors

The authors investigated the switch-on transient properties of p-type vanadium phthalocyanine (VOPc) transistors, which were fabricated by weak epitaxy growth on ordered para-sexiphenyl (p-6P) layer. The overshoot phenomenon of drain current had been observed in the VOPc/p-6P transistors, which was explained by the filling of carriers in traps of organic films. The small overshoot value of about 35% and transient duration time of 2 ms demonstrated the low trap concentration in organic films, which were comparable to the reported hydrogenated amorphous-silicon thin-film transistors. Therefore, the VOPc/p-6P transistors can be applied in active matrix liquid crystal display as switch elements.

Electrical characterization of copper phthalocyanine thin-film transistors with fluoride gate insulator

Different fluoride materials are used as gate dielectrics to fabricate copper phthalocyanine (CuPc) thin film. transistors (OTFTs). The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10(-3) to 10(-1) cm(2) V(-1)s(-1). The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs. The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.

Organic thin-film transistors in sandwich configuration

Organic thin-film transistors (OTFTs) having source/drain electrodes sandwiched between copper phthalocyanine (CuPc) and cobalt phthalocyanine (CoPc) layers, CuPc/CoPc SC OTFTs, are investigated. Comparing their properties with that of CuPc-based top-contact OTFT, field-effect mobility increases from 0.04 to 0.11 cm(2)/Vs, threshold voltage shifts from -13.8 to -8.9 V, and the current on/off ratio maintains at a level of 10(5). A top-contact OTFT with a layer of CuPc and a layer of CoPc (10%)-CuPc mixture reveals that the combination of CuPc and CoPc enhances charge injection from the source electrode into the active layer and increases the off-state current. The sandwich configuration increases the field-effect mobility, reduce the threshold voltage, and improve the on/off ratio at the same time. Our results indicate that using a double-layer of active organic materials in sandwich configuration is an effective way to improve OTFT performance.

Ambipolar organic field-effect transistors with air stability, high mobility, and balanced transport

Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm(2)/V s for the holes and 0.036 cm(2)/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.

西江流域环境河水地球化学研究

River is a major component of the global surface water and CO2 cycles. The chemistry of river waters reveals the nature of weathering on a basin-wide scale and helps us understand the exogenic cycles of elements in the continent-river-ocean system. In particular, geochemical investigation of large river gives important information on the biogeochemical cycles of the elements, chemical weathering rates, physical erosion rates and CO2 consumption during the weathering of the rocks within the drainage basin. Its importance has led to a number of detailed geochemical studies on some of the world's large and medium-size river systems. Flowing in the south of China, the Xijiang River is the second largest river in the China with respect to its discharge, after the Yangtze River. Its headwaters drain the YunGui Plateau, where altitude is approximately 2000 meters. Geologically, the carbonate rocks are widely spread in the river drainage basin, which covers an area of about 0.17xl06 km2, i.e., 39% of the whole drainage basin. This study focuses on the chemistry of the Xijiang river system and constitutes the first geochemical investigation into major and trace elements concentrations for both suspended and dissolved loads of this river and its main tributaries, and Sr isotopic composition of the dissolved load is also investigated, in order to determine both chemical weathering and mechanical erosion rates. As compared with the other large rivers of the world, the Xijiang River is characterized by higher major element concentration. The dissolved major cations average 1.17, 0.33, 0.15, and 0.04 mmol I"1 for Ca, Mg, Na, and K, respectively. The total cation concentrations (TZ+) in these rivers vary between 2.2 and 4.4 meq I'1. The high concentration of Ca and Mg, high (Ca+Mg)/(Na+K) ratio (7.9), enormous alkalinity and low dissolved SiO2/HCO3 ratio (0.05) in river waters reveal the importance of carbonate weathering and relatively weak silicate weathering over the river drainage basin. The major elements in river water, such as the alkalis and alkaline-earths, are of different origins: from rain water, silicate weathering, carbonate and evaporite weathering. A mixing model based on mass budget equation is used in this study, which allows the proportions of each element derived from the different source to be calculated. The carbonate weathering is the main source of these elements in the Xijiang drainage basin. The contribution of rainwater, especially for Na, reaches to approximately 50% in some tributaries. Dissolved elemental concentration of the river waters are corrected for rain inputs (mainly oceanic salts), the elemental concentrations derived from the different rock weathering are calculated. As a consequence, silicate, carbonate and total rock weathering rates, together with the consumption rates of atmospheric CO2 by weathering of each of these lithologies have been estimated. They provide specific chemical erosion rates varying between 5.1~17.8 t/km2/yr for silicate, 95.5~157.2 t/km2/yr for carbonate, and 100.6-169.1 t/km2/yr for total rock, respectively. CO2 consumptions by silicate and carbonate weathering approach 13><109and 270.5x10 mol/yr. Mechanical denudation rates deduced from the multi-year average of suspended load concentrations range from 92-874 t/km2/yr. The high denudation rates are mainly attributable to high relief and heavy rainfall, and acid rain is very frequent in the drainage basin, may exceed 50% and the pH value of rainwater may be <4.0, result from SO2 pollution in the atmosphere, results in the dissolution of carbonates and aluminosilicates and hence accelerates the chemical erosion rate. The compositions of minerals and elements of suspended particulate matter are also investigated. The most soluble elements (e.g. Ca, Na, Sr, Mg) are strongly depleted in the suspended phase with respect to upper continent crust, which reflects the high intensity of rock weathering in the drainage basin. Some elements (e.g. Pb, Cu, Co, Cr) show positive anomalies, Pb/Th ratios in suspended matter approach 7 times (Liu Jiang) to 10 times (Nanpan Jiang) the crustal value. The enrichment of these elements in suspended matter reflects the intensity both of anthropogenic pollution and adsorption processes onto particles. The contents of the soluble fraction of rare earth elements (REE) in the river are low, and REE mainly reside in particulate phase. In dissolved phase, the PAAS-normalized distribution patterns show significant HREE enrichment with (La/Yb) SN=0.26~0.94 and Ce depletion with (Ce/Ce*) SN=0.31-0.98, and the most pronounced negative Ce anomalies occur in rivers of high pH. In the suspended phase, the rivers have LREE-enriched patterns relative to PAAS, with (La/Yb) SN=1 -00-1 .40. The results suggest that pH is a major factor controlling both the absolute abundances of REE in solution and the fractionation of REE of dissolved phase. Ce depletion in river waters with high pH values results probably from both preferential removal of Ce onto Fe-Mn oxide coating of particles and CeC^ sedimentation. This process is known to occur in the marine environment and may also occur in high pH rivers. Positive correlations are also observed between La/Yb ratio and DOC, HCO3", PO4", suggesting that colloids and (or) adsorption processes play an important role in the control of these elements.

Investigation of numerical atomic orbitals for first-principles calculations of the electronic and transport properties of silicon nanowire structures

This thesis is focused on the application of numerical atomic basis sets in studies of the structural, electronic and transport properties of silicon nanowire structures from first-principles within the framework of Density Functional Theory. First we critically examine the applied methodology and then offer predictions regarding the transport properties and realisation of silicon nanowire devices. The performance of numerical atomic orbitals is benchmarked against calculations performed with plane waves basis sets. After establishing the convergence of total energy and electronic structure calculations with increasing basis size we have shown that their quality greatly improves with the optimisation of the contraction for a fixed basis size. The double zeta polarised basis offers a reasonable approximation to study structural and electronic properties and transferability exists between various nanowire structures. This is most important to reduce the computational cost. The impact of basis sets on transport properties in silicon nanowires with oxygen and dopant impurities have also been studied. It is found that whilst transmission features quantitatively converge with increasing contraction there is a weaker dependence on basis set for the mean free path; the double zeta polarised basis offers a good compromise whereas the single zeta basis set yields qualitatively reasonable results. Studying the transport properties of nanowire-based transistor setups with p+-n-p+ and p+-i-p+ doping profiles it is shown that charge self-consistency affects the I-V characteristics more significantly than the basis set choice. It is predicted that such ultrascaled (3 nm length) transistors would show degraded performance due to relatively high source-drain tunnelling currents. Finally, it is shown the hole mobility of Si nanowires nominally doped with boron decreases monotonically with decreasing width at fixed doping density and increasing dopant concentration. Significant mobility variations are identified which can explain experimental observations.

Simulation of multigate SOI transistors with silicon, germanium and III-V channels

In this work by employing numerical three-dimensional simulations we study the electrical performance and short channel behavior of several multi-gate transistors based on advanced SOI technology. These include FinFETs, triple-gate and gate-all-around nanowire FETs with different channel material, namely Si, Ge, and III-V compound semiconductors, all most promising candidates for future nanoscale CMOS technologies. Also, a new type of transistor called “junctionless nanowire transistor” is presented and extensive simulations are carried out to study its electrical characteristics and compare with the conventional inversion- and accumulation-mode transistors. We study the influence of device properties such as different channel material and orientation, dimensions, and doping concentration as well as quantum effects on the performance of multi-gate SOI transistors. For the modeled n-channel nanowire devices we found that at very small cross sections the nanowires with silicon channel are more immune to short channel effects. Interestingly, the mobility of the channel material is not as significant in determining the device performance in ultrashort channels as other material properties such as the dielectric constant and the effective mass. Better electrostatic control is achieved in materials with smaller dielectric constant and smaller source-to-drain tunneling currents are observed in channels with higher transport effective mass. This explains our results on Si-based devices. In addition to using the commercial TCAD software (Silvaco and Synopsys TCAD), we have developed a three-dimensional Schrödinger-Poisson solver based on the non-equilibrium Green’s functions formalism and in the framework of effective mass approximation. This allows studying the influence of quantum effects on electrical performance of ultra-scaled devices. We have implemented different mode-space methodologies in our 3D quantum-mechanical simulator and moreover introduced a new method to deal with discontinuities in the device structures which is much faster than the coupled-mode-space approach.

Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs

This PhD covers the development of planar inversion-mode and junctionless Al2O3/In0.53Ga0.47As metal-oxidesemiconductor field-effect transistors (MOSFETs). An implant activation anneal was developed for the formation of the source and drain (S/D) of the inversionmode MOSFET. Fabricated inversion-mode devices were used as test vehicles to investigate the impact of forming gas annealing (FGA) on device performance. Following FGA, the devices exhibited a subthreshold swing (SS) of 150mV/dec., an ION/IOFF of 104 and the transconductance, drive current and peak effective mobility increased by 29%, 25% and 15%, respectively. An alternative technique, based on the fitting of the measured full-gate capacitance vs gate voltage using a selfconsistent Poisson-Schrödinger solver, was developed to extract the trap energy profile across the full In0.53Ga0.47As bandgap and beyond. A multi-frequency inversion-charge pumping approach was proposed to (1) study the traps located at energy levels aligned with the In0.53Ga0.47As conduction band and (2) separate the trapped charge and mobile charge contributions. The analysis revealed an effective mobility (μeff) peaking at ~2850cm2/V.s for an inversion-charge density (Ninv) = 7*1011cm2 and rapidly decreasing to ~600cm2/V.s for Ninv = 1*1013 cm2, consistent with a μeff limited by surface roughness scattering. Atomic force microscopy measurements confirmed a large surface roughness of 1.95±0.28nm on the In0.53Ga0.47As channel caused by the S/D activation anneal. In order to circumvent the issue relative to S/D formation, a junctionless In0.53Ga0.47As device was developed. A digital etch was used to thin the In0.53Ga0.47As channel and investigate the impact of channel thickness (tInGaAs) on device performance. Scaling of the SS with tInGaAs was observed for tInGaAs going from 24 to 16nm, yielding a SS of 115mV/dec. for tInGaAs = 16nm. Flat-band μeff values of 2130 and 1975cm2/V.s were extracted on devices with tInGaAs of 24 and 20nm, respectively