Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides

Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buried oxides. Pre-radiation charge trapping is suppressed in the fluorinated buried oxides. The fluorine dose and post-implantation anneal time play a very important role in the control of charge trapping.

Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.

聚丁二烯红外和拉曼光谱微结构分析

本工作对聚丁二烯(PBD)进行了光谱微结构分析，主要考察了三个问题。1、PBD分子链构象对PBD红外光谱的影响本工作对高顺式(c)PBD样品进行了室温和低温(25℃和-150℃)红外光谱测定，发现高顺式PBD在低温下整个光谱吸收峰大部分峰宽变窄，峰强增加，特别是738cm~(-1)峰，在低温下位移至748cm~(-1)，峰强增加一倍多。另外还观察到低温结晶态出现802和598cm~(-1)两个吸收峰，在以前文献中未曾有过报导，我们将它们归属为顺式结构结晶峰。通过计算分峰，原来738cm~(-1)峰分成两个位于742和727cm~(-1)的子峰，在低温下，两个子峰分别位移至748和735cm~(-1)，与室温时比较，两个子峰半宽都明显变小。748cm~(-1)子峰峰强也大大增加。结构分析表明，顺式结构特征振动CH=CH面外变角与分子链的构象有密切联系，而仅式(T)和1.2(v)结构却不存在这种情况，因而967cm~(-1)(T)和911cm~(-1)(v)两特征峰低温下变化都很小。本工作认为顺式结构738cm~(-1)峰这一变化是由于顺式结构不同分子链构象所造成的。低温和室温下分峰所得的左子峰对应于最稳定构象产生的吸收，右子峰则对应于相对不稳定构象产生的吸收。同时本工作肯定了米晋瑁等人提出的红外光谱定量分析方法在高顺式样品中的适用性。2、PBD分子链序列结构对红外光谱的影响由于在非高顺式样品中存在CCC���CCT、CCV、TCV、TCT、VCV等多种序列形式，通过不同组成的PBD红外光谱分析，发现在乙烯基含量中、高的样品中，原来738cm~(-1)峰已不再存在，峰值出现在733cm~(-1)附近，而且受1.2结构部分吸收的严重影响，顺式结构CH=CH面外变角吸收已不再是顺式结构的特征峰。通过对850至650cm~(-1)光谱区的光谱解析，本工作认为朱晋瑁等人的红外光谱定量分析方法在乙烯含量中、高的样品中已不再适用。3、PBD拉曼光谱的微结构分析本工作对PBD拉曼光谱1600-1700cm~(-1)区进行了光谱测定，选择了1666、1652和1639.5cm~(-1)吸收峰作为T、C���V构型的特征峰，借助于景遐斌老师的计算分峰方法，对PBD样品进行微结构分析，结果表明，各吸收带拟合良好，特征峰峰位稳定，分别在1666±1、1652±1.5和1639.5±1 cm~(-1)，半峰宽变化不大，峰与峰之间相互影响很小，也就是说，我们选用的特征峰是合理的。用分峰所得的相对面积，结合~1H-NMR测得的值，建立了拉曼光谱PBD定量分析方法。用这一方法对27个不同微结构组成的PBD样品进行分析，所得结果与~1HNMR（高顺式样品与~(13)C-NMR、IR）比较，绝大部分样品一致性很好，最大偏差小于2%。本工作认为，用1666、1652和1639.5cm~(-1)碳双键伸缩振动吸收峰作为T、C���V构型特征峰进行定量分析，在理论上是合理的，在实际上是可行的。而且本方法直接使用固体样品，不经任何溶解和处理，所有计算处理在微机上即可实现，操作和计算都很方便。

金属原卟啉的电化学聚合以及氧在其上的电催化还原

氧的电还原不仅在高效能量转换和储存装置中，而且在电解工业中降低电耗方面也起着重要的作用。为此寻求催化活性好、稳定性高和经济适用的氧还原催化剂是一个十分重要的课题。许多研究工作者已发现卟啉、酞菁一类过渡金属大环络合物对氧的催化还原有很高活性，但是其稳定性差。为提高催化剂的稳定性，人们进行了多种尝试，如真空沉积、热处理、将活性单体嵌入Nafion膜或导电高聚物膜中等，但都未能很好解决稳定性问题。我们试图将活性单体用电化学方法直接聚合在电极基底上，以提高催化剂的稳定性。为此，本论文主要进行了以下工作：（1）活性单体的合成，（2）钴原卟啉二甲酯(CoPP)的电化学聚合，以及（3）氧在聚CoPP膜上电还原的活性、稳定性和机理等的研究。一、通过实验摸索出一条由血红素单体合成CoPP单体的简便途径。二、研究了高聚物膜的电化学聚合和表征，以及膜在水溶液中的电化学行为。用循环伏安法(C.V.)和恒电位(P. S.)方法研究了CoPP单体直接聚合在不同的电极基底[如玻璃碳(GC)、烧结石墨(Pc)、导电玻璃和Pt等]上的条件。发现C.V.图上有三对氧化还原峰。在聚合的过程中，中断所旋加的电位时，聚合电量继续增加。找到了若干种能溶能聚CoPP膜的有机溶剂和水溶液，并对高聚物膜进行了红外、紫外表征，发现聚CoPP膜的紫外吸收红移不大，CoPP单体在聚合中，卟啉环上的一个乙烯基被饱和，卟啉环没有被破坏，在聚CoPP膜中，每个卟啉环中仍存在由四氦围绕着的中心金属。扫描电镜结果表明：高电位下聚合膜的空隙，比低电位下聚合膜的多，由此提出了阳离子自由基的聚合机理。此外我们还发现在酸性溶液中，能观察到明显的中心金属离子的氧化还原峰。三、氧在聚CoPP膜上电催化还原的研究 用RDE（旋转盘电极）方法比较了氧在聚CoPP/GC���吸附CoPP单体/GC���的电还原，发现聚CoPP膜的活性和稳定性都比吸附单体的高。聚合电位影响高聚物膜的稳定性。高聚物膜越厚，稳定性越好，并且随溶液pH值的降低而增大。高聚物膜厚度与其活性关系之间存在一个最佳值，低于或高于此值，其活性降低。在一定厚度范围内，氧电还原的Tafel斜率基本不变；其动力学反应常数(Kf)与电极表面上有效活性中心浓度(Pv')和乘积(Kf·Pv')随膜厚度的增加而降低。用RDE方法研究溶液pH值的影响时发现，在较宽的pH值范围内，聚CoPP/GC���要催化氧为二电子还原。聚CoPP膜的活性随溶液pH值的降低而增大。在低极化区内，氧在碱性溶液中或中性溶液中的电还原与OH~-浓度无关，而在酸性溶液中，H~+浓度有影响；在高极化区内，溶液pH值影响很小。RRDE（旋转环盘电极）的研究结果表明，在一定的电位范围内，氧在聚CoPP/PC���电还原的主要产物为H_2O_2，H_2O_2一但在盘电极上生成，就不再进一步还原，并同时体随有少量氧按四电子途径还原。若电位在很负的情况下，在盘上生成的H_2O_2能够进一步还原。根据以上的实验现象及结果我们提出了氧在聚CoPP膜上电催化还原的二电子还原机理、四电子还原机理和四电子的串联还原机理，并对上述实验现象的结果给予了一定的解释。

藏酋猴(Macaca thibetana)电刺激采精、精液冻存和精子活力的检测

本文研究中国特有的藏酋猴(Macaca thibetana)电刺激采精、精液冻存及精子活力检测。用电刺激方案[(DDR)_(17-c)V]：延搁(delay)17毫秒、间期(duration)17毫秒、刺激频率17脉冲／秒、单方波变电压连续刺激，对笼养藏酋猴进行电刺激采精，测定精液的各种特征参数，包括每次射精量、液化率、精子密度、运动精子的百分率、死活精子以及异常精子比例。并与其它非人灵长类进行了比较。在精液冻存实验中，通过对不同的防冻液、不同的降温程序及防冻液分散系的比较研究，从而确定了适于藏酋猴精液冻存的冻存方案：PSF-4%的甘油-TH-7.5%的小牛血清(PSF-TH/FBS-G)和PSF-MDM。用前一方案冻存藏酋猴精液，复苏运动度为63.58±0.06%；精子的存活率为90.14±0.03%(n=5)。冻存精液用金黄地鼠裸穿透分析法检测，结果表明具有相应新鲜精液穿透力的51.90±0.08%。后一冻存方案能保存88.00±1.03%的运动精子，但运动寿命较短。研究结果表明：1).刺激方案(DDR)_(17-c)V适于藏酋猴的电刺激采精。2).藏酋猴的精液量和精子数在已有过研究的非人灵长类动物中是最多的，藏酋猴有可能成为较理想的精子生物学研究用的非人灵长类动物。3).脂蛋白对维持精子膜的完整可能有重要作用。4).接近生理条件的防冻剂分散系有助于精液的冻存。5).两种冻存方案PSF-TH/FBS-G和PSF-MDM均适于藏酋猴的精液冻存。

GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES

We have observed periodic current and capacitance oscillations with increasing bias on doped GaAs/AlAs superlattices at a temperature of 77 K. The maximum of the observed capacitance is larger than usual geometric capacitances in superlattices, being comparable to the quantum capacitance of the two-dimensional (2D) electron system proposed by Luryi. A model based on well-to-well sequential resonant tunneling due to the movement of the boundary between the electric field domains in superlattice was proposed to explain the origin of the giant capacitance oscillations. It was demonstrated that the capacitance at the peaks of capacitance-voltage (C-V) characteristics reflects the quantum capacitance of the space-charge region at the boundary between the domains (a novel 2D electron system).

STRUCTURAL DEFECTS AND THEIR ELECTRICAL-ACTIVITY IN GERMANIUM IMPLANTED SILICON

The electrical and structural characteristics of secondary defects in regrown amorphous layers formed in n-type Si(100) with a resistivity of 2 OMEGA cm and 6 OMEGA cm using Ge+ ions, has been studied. The amorphous layers with a thickness of 460 nm are formed by implantation of 1 x 10(15) Ge+ cm-2 at an energy of 400 keV. Both conventional furnace and rapid thermal annealing were used to regrow the amorphous layer and the residual defects have been characterised in terms of their concentration depth distribution and activation energies using C-V and DLTS. Structural information has been obtained from RBS and XTEM. By choosing suitable anneal conditions it is possible to eliminate extended defects, apart from a low concentration of end of range dislocation loops. However, a substantial population of electrically active point defects remain after simple low thermal budget anneals. In a sample implanted with 1 x 10(15) Ge+ cm-2 at 400 keV a region of deep donors approximately 460 nm from the surface is always present When the samples are annealed at higher temperatures (> 850-degrees the total deep donor concentration is reduced by one order of magnitude. Other electrically active defects not observable in the low (750-degrees-C) temperature annealed layers become apparent during anneals at intermediate temperatures.

EFFECT OF A SI LAYER ON THE SUPERCONDUCTIVE PROPERTIES OF A BIPBSRCACUO THIN-FILM

The Pb-doped BiSrCaCuO superconducting films were grown by the single source mixed evaporation technique. The microbridges of dimensions 50 mum x 40 mum were fabricated by standard photolithography technologies. Si films with a thickness of 2500 angstrom were deposited on the microbridge area surfaces of BiPbSrCaCuO superconducting films by rf-magnetron sputtering. A greatly lowered zero resistance temperature of the microbridge area of the BiPbSrCaCuO film after Si sputtering was found. A non-linear effect of the current-voltage (I-V) characteristics at 78 K was shown. The high-frequency capacitance-voltage (C-V) curve of this structure at 78 K was symmetrical with the maximum capacitance at V = 0, and the capacitance decreased with increasing applied bias voltage. Afl experimental results are discussed.

INDIUM OHMIC CONTACTS TO N-ZNSE

The reaction between an indium over layer and high purity MBE grown n-ZnSe chlorine doped (2x 10(18) cm-3) epilayers has been investigated using X-ray diffraction, Rutherford backscattering spectroscopy, X-ray photoelectron and Auger electron spectroscopy, and by electrical function tests (I-V and C-V). Good ohmic contacts were formed after annealing at 250 or 300-degrees-C for a few minutes in forming gas. Annealing at lower or higher temperatures resulted in higher resistance or rectifying contacts. The data show that no compounds were formed at the interface; instead In appeared to diffuse into the ZnSe. High surface doping densities appear to allow an ohmic contact, but the electrical data suggest that compensation effects are also very significant in the formation of the contact. These effects must be considered for successful formation of the ohmic contact.

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.

Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations

Neutron induced defect levels in high resistivity silicon detectors have been studied using a current-based macroscopic defect analysis system: thermally stimulated current (TSC) and current deep level transient spectroscopy (I-DLTS). These studies have been correlated to the traditional C-V, I-V, and transient current and charge techniques (TCT/TChT) after neutron radiation and subsequent thermal anneals. It has been found that the increases of the space charge density, N-eff, in irradiated detectors after thermal anneals (N-eff reverse anneal) correspond to the increases of deep levels in the silicon bandgap. In particular, increases of the double vacancy center (V-V and V-V-- -) and/or C-i-O-i level have good correlations with the N-eff reverse anneal. It has also been observed that the leakage current of highly irradiated (Phi(n) > 10(13) n/cm(2)) detectors increases after thermal anneals, which is different from the leakage current annealing behavior of slightly irradiated (Phi(n) < 10(13) n/cm(2)) detectors. It is apparent that V-V center and/or C-i-O-i level play important roles in both N-eff and leakage current degradations for highly irradiated high resistivity silicon detectors.

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)

Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (VHFN) irradiation (1.7x10(15) n/cm(2)). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (E(t) < 0.33 eV) are in the order of 10(13)cm(-3), while those for relatively deep levels (E(t) > 0.33 eV) are in the order of 10(14) cm(-3). TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N-eff) in the order of 2x10(14) cm(-3). Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.

Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas (2DEG) is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors (AlGaN/GaN HFETs). Current-voltage (I-V) characteristics for ungated AlGaN/GaN heterostructures and capacitance-voltage (C-V) characteristics for AlGaN/GaN HFETs are obtained, and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated. It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50% compared with the electron mobility of Hall measurements. We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility.

SIMOX SOI埋氧注氮工艺对埋氧中固定正电荷密度的影响

在SIMOX SOI材料的埋氧中注氮是为了增强该类材料的抗辐射能力.通过C-V研究表明,对于埋氧层为150 nm的SIMOX SOI材料来说,当在其埋氧中注入4×10~(15)cm~(-2)剂量的氮后,与未注氮埋氧相比,注氮埋氧中的固定正电荷密度显著增加了;而对于埋氧层为375 nm的SIMOX SOI材料来说,当注氮剂量分别为2×10~(15)cm~(-2)和3×10~(15)cm~(-2)时,并未发现埋氧中固定正电荷密度的增加.所有SIMOX注氮后的退火条件是完全相同的.通过SIMS分析,将薄埋氧中固定正电荷密度的增加归结为注氮后的退火所引起的氮在埋氧与Si界面附近的积累.同时还发现,未注氮埋氧中的固定正电荷密度是非常小的.这意味着通常情况下在热生长SiO_2膜中大量存在的氧化物电荷,其数量在SIMOX埋氧中则要相对少得多.