A Comparati ve Study of Mechanical and Tribological Properties of AISI-304 and AISI-316 Submitted to Glow Discharge Nitriding

Mechanical and tribological properties of AISI 304 and AISI 316 stainless steels submitted to glow discharge ion nitriding are reported. The atmosphere was 20:80 - N2:H2 with substrate temperatures ranging from 300 to 500 °C. Treatment at 300 °C produced expanded austenite (γN) in both steels. Increasing the temperature, the phases γ′-Fe4N and ε- Fe2+xN were present and the latter is the major phase for AISI 304. At 500 °C, the CrN phase was also identified in both steels. Hardnesses of about 13-14 GPa at near surface regions were obtained in both steels. Moreover, AISI 316 nitrided at 500 °C has the deepest hard layer. Tribological tests showed that wear can be reduced by up to a factor of six after the nitriding processes, even for a working temperature of 300 °C. The profiles during and after nanoscratch tests did not reveal significant differences after nitriding processes in both steels.

A Comparative Study of Mechanical and Tribological Properties of AISI-304 and AISI-316 Submitted to Glow Discharge Nitriding

Mechanical and tribological properties of AISI 304 and AISI 316 stainless steels submitted to glow discharge ion nitriding are reported. The atmosphere was 20:80 - N2:H2 with substrate temperatures ranging from 300 to 500 °C. Treatment at 300 °C produced expanded austenite (γN) in both steels. Increasing the temperature, the phases γ′-Fe4N and ε- Fe2+xN were present and the latter is the major phase for AISI 304. At 500 °C, the CrN phase was also identified in both steels. Hardnesses of about 13-14 GPa at near surface regions were obtained in both steels. Moreover, AISI 316 nitrided at 500 °C has the deepest hard layer. Tribological tests showed that wear can be reduced by up to a factor of six after the nitriding processes, even for a working temperature of 300 °C. The profiles during and after nanoscratch tests did not reveal significant differences after nitriding processes in both steels.

Comparison of the properties of compacted and porous lamellar chitosan-xanthan membranes as dressings and scaffolds for the treatment of skin lesions

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Não vício assintótico, consistência forte e uniformemente forte de estimadores do tipo núcleo para dados direcionais sobre uma esfera unitária k-dimensional

In this work we studied the asymptotic unbiasedness, the strong and the uniform strong consistencies of a class of kernel estimators fn as an estimator of the density function f taking values on a k-dimensional sphere

Métodos estatisticos em cadeias de Markov

Este trabalho tem como objetivo o estudo do comportamento assintótico da estatística de Pearson (1900), que é o aparato teórico do conhecido teste qui-quadrado ou teste x2 como também é usualmente denotado. Inicialmente estudamos o comportamento da distribuição da estatística qui-quadrado de Pearson (1900) numa amostra {X1, X2,...,Xn} quando n → ∞ e pi = pi0 , 8n. Em seguida detalhamos os argumentos usados em Billingley (1960), os quais demonstram a convergência em distribuição de uma estatística, semelhante a de Pearson, baseada em uma amostra de uma cadeia de Markov, estacionária, ergódica e com espaço de estados finitos S

Efeitos da adição de átomos de Mn na rede do GaN via métodos de estrutura eletrônica

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers

We present first-principles calculations of the thermodynamic and electronic properties of the zinc-blende ternary InxGa1-xN. InxAl1-xN, BxGa1-xN, and BxAl1-xN alloys. They are based on a generalized quasi-chemical approximation and a pseudopotential-plane-wave method. T-x phase diagrams for the alloys are obtained, We show that due to the large difference in interatomic distances between the binary compounds a significant phase miscibility gap for the alloys is found. In particular for the InxGa1-xN alloy, we show also experimental results obtained from X-ray and resonant Raman scattering measurements, which indicate the presence of an In-rich phase with x approximate to 0.8. For the boron-containing alloy layers we found a very high value for the critical temperature for miscibility. similar to9000 K. providing an explanation for the difficulties encountered to grow these materials with higher boron content. The influence of a biaxial strain on phase diagrams, energy gaps and gap bowing of these alloys is also discussed. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Remarks on immersions in the metastable dimension range

In this work we present a generalization of an exact sequence of normal bordism groups given in a paper by H. A. Salomonsen (Math. Scand. 32 (1973), 87-111). This is applied to prove that if h : M-n --> Xn+k, 5 less than or equal to n < 2k, is a continuous map between two manifolds and g : M-n --> BO is the classifying map of the stable normal bundle of h such that (h, g)(*) : H-i (M, Z(2)) --> H-i (X x BO, Z(2)) is an isomorphism for i < n - k and an epimorphism for i = n - k, then h bordant to an immersion implies that h is homotopic to an immersion. The second remark complements the result of C. Biasi, D. L. Goncalves and A. K. M. Libardi (Topology Applic. 116 (2001), 293-303) and it concerns conditions for which there exist immersions in the metastable dimension range. Some applications and examples for the main results are also given.

Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics.

Light and thermal excitation of depolarization current in indirect bandgap Alx Ga1-xAs

Monochromatic light excitation in conjunction with thermally stimulated depolarization current measurements are applied to indirect bandgap AlxGa1-xAs. The obtained average activation energy for dipole relaxation is in very close agreement with the DX center binding energy. Monochromatic light induces state transition in the defect and makes possible the identification of dipoles observed in the dark. Charge relaxation currents are destroyed by photoionization of Al0.5Ga0.5As using either 647 nm Kr+ or 488 nm Ar+ laser lines, which are above the DX center threshold photoionization energy. It suggests that correlation may exist among charged donor states DX--d+. Sample resistance as a function of temperature is also measured in the dark and under illumination and shows the probable X valley effective mass state participation in the electron trapping. Ionization with energies of 0.8 eV and 1.24 eV leads to striking current peak shifts in the thermally stimulated depolarization bands. Since vacancies are present in this material, they may be responsible for the secondary band observed in the dark as well as participation in the light induced recombination process.

O processo de integração em Blaise Pascal

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Polinômios de Szegö e análise de frequência

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Uma construção de códigos BCH

Um código BCH C (respectivamente, um código BCH C 0 ) de comprimento n sobre o anel local Zp k (respectivamente, sobre o corpo Zp) é um ideal no anel Zpk [X] (Xn−1) (respectivamente, no anel Zp[X] (Xn−1) ), que ´e gerado por um polinômio mônico que divide Xn−1. Shankar [1] mostrou que as raízes de Xn−1 são as unidades do anel de Galois GR(p k , s) (respectivamente, corpo de Galois GF(p, s)) que é uma extensão do anel Zp k (respectivamente, do corpo Zp), onde s é o grau de um polinômio irredutível f(X) ∈ Zp k [X]. Neste estudo, assumimos que para si = b i , onde b é um primo e i é um inteiro não negativo tal que 0 ≤ i ≤ t, existem extensões de anéis de Galois correspondentes GR(p k , si) (respectivamente, extensões do corpo de Galois GF(p, si)) do anel Zp k (respectivamente, do corpo Zp). Assim, si = b i para i = 2 ou si = b i para i > 2. De modo análogo a [1], neste trabalho, apresentamos uma sequência de códigos BCH C0, C1, · · · , Ct−1C sobre Zp k de comprimentos n0, n1, · · · , nt−1, nt , e uma sequência de códigos BCH C 0 0 , C0 1 , · · · , C0 t−1 , C0 sobre Zp de comprimentos n0, n1, · · · , nt−1, nt , onde cada ni divide p si − 1. Palavras Chave: Anel de Galois, corpo de Galois, código BCH.

Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (100) and (311)A GaAs surfaces

The competition between confinement potential fluctuations and band-gap renormalization (BGR) in GaAs/AlxGa1-xAs quantum wells grown on [1 0 0] and [3 1 1]A GaAs substrates is evaluated. The results clearly demonstrate the coexistence of the band-tail states filling related to potential fluctuations and the band-gap renormalization caused by an increase in the density of photogenerated carriers during the photoluminescence (PL) experiments. Both phenomena have strong influence on temperature dependence of the PL-peak energy (E-PL(T)). As the photon density increases, the E-PL can shift to either higher or lower energies, depending on the sample temperature. The temperature at which the displacement changes from a blueshift to a redshift is governed by the magnitude of the potential fluctuations and by the variation of BGR with excitation density. A simple band-tail model with a Gaussian-like distribution of the density of state was used to describe the competition between the band-tail filling and the BGR effects on E-PL(T). (C) 2012 Elsevier B.V. All rights reserved.

A graded subring of an inverse limit of polynomial rings

We study the power series ring R= K[[x1,x2,x3,...]]on countably infinitely many variables, over a field K, and two particular K-subalgebras of it: the ring S, which is isomorphic to an inverse limit of the polynomial rings in finitely many variables over K, and the ring R', which is the largest graded subalgebra of R. Of particular interest are the homogeneous, finitely generated ideals in R', among them the generic ideals. The definition of S as an inverse limit yields a set of truncation homomorphisms from S to K[x1,...,xn] which restrict to R'. We have that the truncation of a generic I in R' is a generic ideal in K[x1,...,xn]. It is shown in Initial ideals of Truncated Homogeneous Ideals that the initial ideal of such an ideal converge to the initial ideal of the corresponding ideal in R'. This initial ideal need no longer be finitely generated, but it is always locally finitely generated: this is proved in Gröbner Bases in R'. We show in Reverse lexicographic initial ideals of generic ideals are finitely generated that the initial ideal of a generic ideal in R' is finitely generated. This contrast to the lexicographic term order. If I in R' is a homogeneous, locally finitely generated ideal, and if we write the Hilbert series of the truncated algebras K[x1,...,xn] module the truncation of I as qn(t)/(1-t)n, then we show in Generalized Hilbert Numerators that the qn's converge to a power series in t which we call the generalized Hilbert numerator of the algebra R'/I. In Gröbner bases for non-homogeneous ideals in R' we show that the calculations of Gröbner bases and initial ideals in R' can be done also for some non-homogeneous ideals, namely those which have an associated homogeneous ideal which is locally finitely generated. The fact that S is an inverse limit of polynomial rings, which are naturally endowed with the discrete topology, provides S with a topology which makes it into a complete Hausdorff topological ring. The ring R', with the subspace topology, is dense in R, and the latter ring is the Cauchy completion of the former. In Topological properties of R' we show that with respect to this topology, locally finitely generated ideals in R'are closed.