Phase separation suppression in InGaN epitaxial layers due to biaxial strain
| Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
|---|---|
| Data(s) |
20/05/2014
20/05/2014
04/02/2002
|
| Resumo |
Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics. |
| Formato |
769-771 |
| Identificador |
http://dx.doi.org/10.1063/1.1436270 Applied Physics Letters. Melville: Amer Inst Physics, v. 80, n. 5, p. 769-771, 2002. 0003-6951 http://hdl.handle.net/11449/40011 10.1063/1.1436270 WOS:000173617700022 WOS000173617700022.pdf |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics (AIP) |
| Relação |
Applied Physics Letters |
| Direitos |
closedAccess |
| Tipo |
info:eu-repo/semantics/article |
