Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 degrees C for 5 min in an O-2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity.

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts

Under identical preparation conditions, Au/GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. (c) 2006 American Institute of Physics.

Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts

The Schottky behaviour of Ni/Au contact on n-GaN was investigated under various annealing conditions by current-voltage (I-V) measurements. A non-linear fitting method was used to extract the contact parameters from the I-V characteristic curves. Experimental results indicate that high quality Schottky contact with a barrier height and ideality factor of 0.86 +/- 0.02 eV and 1.19 +/- 0.02 eV, respectively, can be obtained under 5 min annealing at 600degreesC in N-2 ambience.

Electroluminescence from Au/(SiO2/Si/SiO2) nanometer double barrier/p-Si structures and its mechanism

SiO2/Si/SiO2 nanometer double barriers (SSSNDB) with Si layers of twenty-seven different thicknesses in a range of 1-5 nm with an interval of 0.2 nm have been deposited on p-Si substrates using two-target alternative magnetron sputtering. Electroluminescence (EL) from the semitransparent Au film/SSSNDB/p-Si diodes and from a control diode without any Si layer have been observed under forward bias. Each EL spectrum of all these diodes can be fitted by two Gaussian bands with peak energies of 1.82 and 2.25 eV, and full widths at half maximum of 0.38 and 0.69 eV, respectively. It is found that the current, EL peak wavelength and intensities of the two Gaussian bands of the Au/SSSNDB/p-Si structure oscillate synchronously with increasing Si layer thickness with a period corresponding to half a de Broglie wavelength of the carriers. The experimental results strongly indicate that the EL originates mainly from two types of luminescence centres with energies of 1.82 and 2.25 eV in the SiO2 barriers, rather than from the nanometer Si well in the SSSNDB. The EL mechanism is discussed in detail.

Quantifying the effectiveness of SiO2/Au light trapping nanoshells for thin film poly-Si solar cells

In order to enhance light absorption of thin film poly-crystalline silicon (TF poly-Si) solar cells over a broad spectral range, and quantify the effectiveness of nanoshell light trapping structure over the full solar spectrum in theory, the effective photon trapping flux (EPTF) and effective photon trapping efficiency (EPTE) were firstly proposed by considering both the external quantum efficiency of TF poly-Si solar cell and scattering properties of light trapping structures. The EPTF, EPTE and scattering spectrum exhibit different behaviors depending on the geometric size and density of nanoshells that form the light trapping layer. With an optimum size and density of SiO2/Au nanoshell light trapping layer, the EPTE could reach up to 40% due to the enhancement of light trapping over a broad spectral range, especially from 500 to 800 nm.

Tunable optical properties of nano-Au on vanadium dioxide

The optical properties of Au nanoparticles deposited on thermochromic thin films of VO2 are investigated using spectroscopy. A localized modification on the transmittance spectrum of VO2 film is formed due to the presence of Au nanoparticles which exhibit localized surface plasmon resonance (LSPR) in the visible-near IR region. The position of the modification wavelength region shows a strong dependence on the Au mass thickness and shifts toward the red as it increases. On the other hand, it was found that the LSPR of Au nanoparticles can be thermally tunable because of the thermochromism of the supporting material of VO2. The LSPR wavelength, lambda(SPR), shifts to the blue with increasing temperature, and shifts back to the red as temperature decreases. A fine tuning is achieved when the temperature is increased in a stepwise manner.

Electron injection assisted phase transition in a nano-Au-VO2 junction

The semiconductor-metal transition of vanadium dioxide (VO2) thin films epitaxially grown on C-plane sapphire is studied by depositing Au nanoparticles onto the thermochromic films forming a metal-semiconductor contact, namely, a nano-Au-VO2 junction. It reveals that Au nanoparticles have a marked effect on the reduction in the phase transition temperature of VO2. A process of electron injection in which electrons flow from Au to VO2 due to the lower work function of the metal is believed to be the mechanism. The result may support the Mott-Hubbard phase transition model for VO2.

贵金属（Au, Ag, Pt, Pd）纳米材料的可控合成及性能研究

功能化的贵金属纳米材料的设计和可控制备在材料科学研究领域引起了人们广泛的关注。贵金属纳米材料的光学、电学、磁学和催化等物理和化学性质不但与其大小有关，而且还与其形貌息息相关。因此寻求简单而有效的低温溶液合成途径以实现对贵金属纳米材料的尺寸和形貌控制尤为重要。本论文的主要研究内容可以归纳如下： (1)在水溶液中利用种子生长方法分别制备了核壳Au-Pd/Pt三金属复合纳米粒子和三层的核壳AuAg复合纳米粒子。这些纳米粒子的尺寸和组成可以通过改变金种子的加入量来加以调控。 (2)通过种子生长和取代沉积相结合的方法制备了具有金核铂/银双金属壳的铃铛状纳米粒子。通过扫描电子显微镜、透射电子显微镜和X-射线光电子能谱对所得纳米粒子的尺寸、结构和组成进行了表征。 (3)以二肽甘氨酰甘氨酸作为模板合成了具有[111]取向的单晶银纳米片。通过改变实验条件探讨了片状银纳米结构的形成机理。片状银纳米结构的产率可达到80%，反应物之间的摩尔比对产物的尺寸和形貌有至关重要的作用。 (4)将K3[Fe(CN)6]和Na2S2O3的混合溶液进行水热处理，得到了具有立方体形貌的FeIIIFeIII(CN)6（柏林绿）微晶。实验结果显示K3[Fe(CN)6]和Na2S2O3的摩尔比及其浓度对所得产物的尺寸、形貌和组成有决定性的作用。 (5)在室温下通过混合3, 3', 5, 5'-四甲基联苯胺和氯铂酸，成功合成了有机-无机杂化的纳米纤维。纳米纤维的尺寸和形状可以通过改变反应物的比和浓度加以控制。基于不同的实验结果，提出了纳米纤维的可能形成机理。

Au(111)自组装膜表面原子力显微镜纳米刻蚀

在Au(111)硫醇自组装膜上通过原子力显微镜（AFM）纳米刻蚀加工了各种功能化纳米结构。本论文取得的主要成果如下： 1. “蘸笔”技术移除自组装膜及金基底 以烯丙基溴为墨水，用蘸笔技术在16－巯基十六羧酸（MHA）修饰的Au(111)基底上可以实现对金基底的直接加工，形成阴刻图案；并提出了详细的加工机理。 2. Au(111)自组膜表面的可逆加工 （1）利用乙醇修饰的导电AFM针尖通过电致刻蚀在Au(111)基底的烷基硫醇自组装膜上实现了阴阳刻图案的可逆加工。X射线光电子能谱分析表明阳刻图案的化学组成为氧化金，且此氧化金可被乙醇还原生成金得到阴刻图案。此阴刻图案可用作纳米模板，我们利用此模板加工了氧化铁磁性纳米结构和溶菌酶蛋白质纳米结构。 （2）用修饰硫醇的导电AFM针尖在Au(111)基底上实现了硫醇的可逆书写。 3. Au(111)自组膜表面官能团转化 用硫醇自组装膜修饰的Pt针在Au(111)基底的烷基硫醇自组装膜上实现了表面端基官能团转化。所得亲水性纳米图案可用作物理（如直接吸附纳米粒子）和化学纳米模板（如诱导硅烷自组装）。加工过程中基底自组装膜保持完整，未破坏Au-S键。 4. AFM研究适配子与血小板衍生生长因子－BB的相互作用 利用AFM电致刻蚀在HS-(CH2)12-(OCH2CH2)4-OH（EG4）/Au(111)上选择性移除EG4，在新暴露的金基底上生长血小板衍生生长因子－BB（PDGF-BB）适配子与EG4的混合自组装膜，通过PDGF-BB适配子与 PDGF-BB的特异性键合固定PDGF-BB，得到PDGF-BB的纳米图案。

Au(111)电极上分子相互作用扫描隧道显微镜研究

本论文利用扫描隧道显微镜(STM)在Au(111)电极上结合电化学方法在分子水平上观察分子的吸附组装和结构调控等。主要内容如下： (1) 用现场电化学扫描隧道显微镜(ECSTM)在Au(111)电极上研究了巯基己醇(MHO)取代六苯并苯的详细过程。取代速度强烈依赖于MHO的浓度。浓度较低时，反应速度较慢，我们可以用现场ECSTM跟踪观察详细的取代过程。取代首先发生在靠近重构线肘部的位置，出现单分子或多个六苯并苯分子的取代而形成的pits。随着取代过程的进行，这些小的pits生长或合并成较大的pits；pits周围的六苯并苯分子逐渐被MHO取代，最终在限定的区域内形成有序的domain。观察局部区域的取代过程，我们发现沿着重构线的方向扩展速度最快。快速取代之后，MHO在Au(111)电极表面形成( )R30°晶格结构，而慢速取代之后，MHO在表面形成c(4×2)超结构。与MHO在干净的Au(111)电极上的吸附相比，在六苯并苯修饰的Au(111)电极上即使在很低的浓度下也没有观察到平躺的物理吸附相，而是直接形成化学吸附相。这可能是由于六苯并苯的存在，MHO的碳氢链不能直接与Au原子接触。通过数据分析，我们发现取代速率曲线呈倒S形状。 (2) 我们用循环伏安法(CV)和ECSTM研究了腺嘌呤(Adenine，A)，胸腺嘧啶(Thymine，T)和鸟嘌呤(Guanine，G)单组分及混合组分(A+T)的电化学二维相变。施加在Au(111)电极上的电位不同，A会呈现不同的吸附状态，包括物理吸附相和化学吸附相。在物理吸附的电势范围，高分辨ECSTM图像显示，同一个电势下共存着多样性的A的吸附结构。当基底电势变得更正时，一种更倾斜的吸附状态也就是A的化学吸附相会形成。在较负电位下，A和T能通过分子之间氢键作用在Au(111)电极上形成一种新的网络结构，而G能形成多层吸附。 (3) 利用STM研究了不同方法移除硫醇自组装膜之后金电极表面的再生情况。分别使用了化学法和电化学还原脱附法。化学法比较简单，使用的试剂有王水，piranha和NaBH4。王水对金电极表面有强腐蚀作用；piranha和NaBH4对金表面的作用较小，但是NaBH4处理之后的金表面上会有较多的亮岛出现。在移除自组装膜之后的电极上直接组装六苯并苯，我们观察到用piranha和NaBH4处理之后的金电极表面上六苯并苯自组装膜缺陷较多，有序domain也比较小。电化学法脱附可以得到比较干净的金表面，直接组装的六苯并苯自组装膜有序性好，缺陷少。而且，电化学脱附法通过控制电位可以实现硫醇自组装膜和六苯并苯自组装膜的相互转换。

CONTROLLING OF SCHOTTKY-BARRIER HEIGHTS FOR AU/N-GAAS AND TI/N-GAAS WITH HYDROGEN INTRODUCED AFTER METAL-DEPOSITION BY BIAS ANNEALING

Up to now, in most of the research work done on the effect of hydrogen on a Schottky barrier, the hydrogen was introduced into the semiconductor before metal deposition. This letter reports that hydrogen can be effectively introduced into the Schottky barriers (SBs) of Au/n-GaAs and Ti/n-GaAs by plasma hydrogen treatment (PHT) after metal deposition on [100] oriented n-GaAs substrates. The Schottky barrier height (SBH) of a SB containing hydrogen shows the zero/reverse bias annealing (ZBA/RBA) effect. ZBA makes the SBH decrease and RBA makes it increase. The variations in the SBHs are reversible. In order to obtain obvious ZBA/RBA effects, selection of the temperature for plasma hydrogen treatment is important, and it is indicated that 100-degrees-C for Au/n-GaAs and 150-degrees-C for Ti/n-GaAs are suitable temperatures. It is concluded from the analysis of experimental results that only the hydrogen located at or near the metal-semiconductor interface, rather than the hydrogen in the bulk of either the semiconductor or the metal, is responsible for the ZBA/RBA effect on SBH.

INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUS SI STUDIED BY XPS AND AES

Interfacial formation processes and reactions between Au and hydrogenated amorphous Si have been studied by photoemission spectroscopy and Auger electron spectroscopy. A three-dimensional growth of Au metal cluster occurs at initial formation of the Au/a-Si:H interface. When Au deposition exceeds a critical time, Au and Si begin interdiffusing and react to create an Au-Si alloy region. Annealing enhances interdiffusion and a Si-rich region exists on the topmost surface of Au films on a-Si:H.

NiO removal of Ni/Au Ohmic contact to p-GaN after annealing

The Ni/Au contact was treated with oxalic acid after annealing in O_2 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth pro-file of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.

以Au为缓冲层在Si衬底上生长ZnO薄膜

采用化学气相沉积（CVD）方法在Si（001）衬底上分别制备了有金属Au缓冲层以及无Au缓冲层的ZnO薄膜。其中Au缓冲层在物理气相沉积（PVD）设备中蒸发，厚度大约为300nm。有Au缓冲层的ZnO薄膜晶体质量比直接在Si衬底上生长有了显著提高。利用X射线衍射（XRD）研究了所生长ZnO薄膜的结晶质量，有Au缓冲层的ZnO薄膜虽然仍为多晶，但显示出明显的择优取向。用光学显微镜研究了ZnO薄膜的表面特征，金属Au缓冲层显著地提高了在Si衬底上生长的ZnO薄膜的晶粒尺寸及平整度。同时利用室温光致发光（PL）谱研究了ZnO薄膜的光学性质，并分析了有Au缓冲层的ZnO薄膜NEB发光峰强度反而弱的可能原因。