Electron injection assisted phase transition in a nano-Au-VO2 junction


Autoria(s): Xu, G; Huang, CM; Tazawa, M; Jin, P; Chen, DM; Miao, L
Data(s)

2008

Resumo

The semiconductor-metal transition of vanadium dioxide (VO2) thin films epitaxially grown on C-plane sapphire is studied by depositing Au nanoparticles onto the thermochromic films forming a metal-semiconductor contact, namely, a nano-Au-VO2 junction. It reveals that Au nanoparticles have a marked effect on the reduction in the phase transition temperature of VO2. A process of electron injection in which electrons flow from Au to VO2 due to the lower work function of the metal is believed to be the mechanism. The result may support the Mott-Hubbard phase transition model for VO2.

National High Technology Research and Development Program of China [2007AA03Z326]; Department of Science and Technology of Guangdong Province [200649851105]; Bureau of Science and Technology of Guangzhou Municipality [2007Z2-D2051]

Identificador

http://ir.giec.ac.cn/handle/344007/3386

http://www.irgrid.ac.cn/handle/1471x/70295

Fonte

Xu, G; Huang, CM; Tazawa, M; Jin, P; Chen, DM; Miao, L.Electron injection assisted phase transition in a nano-Au-VO2 junction,APPLIED PHYSICS LETTERS,2008,93(6):-

Palavras-Chave #METAL-INSULATOR-TRANSITION #SURFACE-PLASMON RESONANCE #VANADIUM DIOXIDE #FILMS #VO2
Tipo

期刊论文