Electronic characteristics of InAs self-assembled quantum dots

Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.

Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)

Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots

The influence of interdot electronic coupling on photoluminescence (PL) spectra of self-assembled InAs/GaAs quantum dots (QDs) has been systematically investigated combining with the measurement of transmission electron microscopy. The experimentally observed fast red-shift of PL energy and an anomalous reduction of the linewidth with increasing temperature indicate that the QD ensemble can be regarded as a coupled system. The study of multilayer vertically coupled QD structures shows that a red-shift of PL peak energy and a reduction of PL linewidth are expected as the number of QD layers is increased. On the other hand, two layer QDs with different sizes have been grown according to the mechanism of a vertically correlated arrangement. However, only one PL peak related to the large QD ensemble has been observed due to the strong coupling in InAs pairs. A new possible mechanism to reduce the PL linewidth of QD ensemble is also discussed.

Formation trends of ordered self-assembled nanoislands on stepped substrates

The growth of ordered self-assembled nanoislands on stepped substrates is studied systematically by kinetic Monte Carlo simulations. As the terrace width is small, the formation of nanoislands is confined in the steps and nanoislands ordered in lines or nanowires can be obtained. The Schwoebel barrier at the step edges has a great influence on the evolution of both the size and space distributions of the islands. When the terrace width is relatively large, self-ordering of nanoislands in the center regions of the terraces happens. An unexpected trend of the nanoisland self-ordering is found as the deposition thickness is larger than 0.2 ML, which can be related to the attractive migrations between nearby islands.

Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices

City Univ Hong Kong

Self-Assembly of Rod-Terminally Tethered Three-Armed Star-Shaped Coil Block Copolymer: Investigation of the Presence of the Branching in the Coil to the Self-Assembled Behavior

Self-assembled behavior of rod-terminally tethered three-armed star-shaped coil block copolymer melts was studied by applying self-consistent-field lattice techniques in three-dimensional (3D) space. Similar to rod-coil diblock copolymers, five morphologies were observed, i.e., lamellar, perforated lamellar, gyroidlike, cylindrical and sphericallike structures, while the distribution of the morphologies in the phase diagram was dramatically changed with respect to that Of rod-coil diblock copolymers.

Tunable wettability by counterion exchange at the surface of electrostatic self-assembled multilayers

A novel method to tune surface wettability rapidly and reversibly has been developed by ion exchange of the counterions at the surface of a multilayer film assembled via electrostatic interaction.

Self-assembled 3D Architectures of LuBO3 : Eu3+: Phase-selective synthesis, growth mechanism, and tunable luminescent properties

Rhombohedral-calcite and hexagonal-vaterite types of LuBO:Eu3+ microparticles with various complex self-assembled 3D architectures have been prepared selectively by an efficient surfactant- and template-free hydrothermal process for the first time. X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectrometry, transmission electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, photoluminescence, and cathodoluminescence spectra as well as kinetic decays were used to characterize the samples.

Reversible Nanopatterning on Self-Assembled Monolayers on Gold

The reversible fabrication of positive and negative nanopatterns on 1-hexadecanethiol (HDT) self-assembled monolayers (SAMs) on Au(111) was realized by bias-assisted atomic force microscopy (AFM) nanolithography using an ethanol-ink tip. The formation of positive and negative nanopatterns via the bias-assisted nanolithography depends solely on the polarity of the applied bias, and their writing speeds can reach 800,um/s and go beyond 1000 mu m/s, respectively. The composition of the positive nanopatterns is gold oxide and the nanometer-scale gold oxide can be reduced by ethanol to gold, as proved by X-ray photoelectron spectroscopy (XPS) analysis, forming the negative nanopatterns which can be refilled with HDT to recover the SAMs.