Unusual resistivity hysteresis in a bulk magnetoresistive ferromagnetic/ferrimagnetic composite (La0.7 Ca0.3 Mn O3 Mn3 O4): Role of demagnetization effects

The authors report an intriguing resistivity versus magnetic field dependence in polycrystalline composite samples containing a magnetoresistive manganite (ferromagnetic/conducting La0.7 Ca0.3 Mn O3) and a magnetic manganese oxide (ferrimagnetic/insulating Mn3 O4). At 10 K, when the magnetic field is scanned from positive to negative values, the resistance peak occurs at positive magnetic field, instead of zero or negative field as usually observed in polycrystalline manganite samples. The position of the resistance peak agrees well with the cancellation of the internal magnetic field, suggesting that the demagnetization effects are responsible for this behavior. © 2007 American Institute of Physics.

湖北江汉平原农田生态系统Mn的循环及平衡分析

欧共体科技合作项目 (STD TS3 CT92 0 0 65 )《中国亚热带人口密集区农业集约化对资源永续利用和食品安全性的影响及解决途径 研究》; 联合国粮农组织 (FAO)援华技术合和食品安全性的影响及解决途径研究》和联合国粮农组织 (FAO)援华技术合作项目 (TCP/CPR/6611)

(Ga,Mn)As 和闪锌矿结构CrSb 的分子束外延生长制备和磁性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

注Mn InAs/GaAs 量子点光电磁性质的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

稀磁半导体(Ga, Mn)As磁光性质的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si 共掺杂和高温退火对(Ga,Mn)As 结构和磁性质的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

稀磁半导体(Ga,Mn)As和铁磁金属-半导体异质结Fe/GaAs铁磁相变过程的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

稀磁半导体（Ga,Mn)As 的超快磁光谱研究

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稀磁半导体(Ga,Mn)As 中自旋动力学的探索与研究

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Ferromagnetic modification of GaN film by Cu+ ions implantation

The structural and magnetic properties of Cu+ ions-implanted GaN films have been reported. Eighty kilo-electron-volt Cu+ ions were implanted into n-type GaN film at room temperature with fluences ranging from 1 x 10(16) to 8 x 10(16) cm(-2) and subsequently annealed at 800 degrees C for 1 h in N-2 ambient. PIXE was employed to determine the Cu-implanted content. The magnetic property was measured by the Quantum Design MPMS SQUID magnetometer. No secondary phases or clusters were detected within the sensitivity of XRD. Raman spectrum measurement showed that the Cu ions incorporated into the crystal lattice positions of GaN through substitution of Ga atoms. Apparent ferromagnetic hysteresis loops measured at 10 K were presented. The experimental result showed that the ferromagnetic signal strongly increased with Cu-implanted fluence from 1 x 10(16) to 8 x 10(16) cm(-2).

Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.

Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films

We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zeners pd model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors.

Influence of Si doping on magnetic properties of (Ga,Mn)As

We have systematically investigated the magnetic properties of Si-doped (Ga,Mn)As films. When the Si content is low, both Curie temperature (T-C) and carrier density (p) decrease compared with undoped (Ga,Mn)As, whereas a monotonic increase of T-C and p is observed with further increase in the doping content of Si. We discuss the possible mechanism for the changes obtained by different Si doping contents and attribute the results to a competition between the existence of Si-Ga (Si substitutes for Ga site) that acts as a donor and Si-I (Si interstitials) which is in favor of the improvement of ferromagnetism. (C) 2008 Elsevier B.V. All rights reserved.

Electronic structure and optical properties of GaN with Mn-doping

Calculations of the electronic structure and the density of states of GaN with Mn are carried out by means of first-principles plane-wave pesudopotential method based on density functional theory. The results reveal a 100% spin polarized impurity band in band structure of Ga1-xMnxN due to hybridization of Mn 3d and N 2p orbitals. The material is half metallic and suited for spin injectors. In addition, a peak of refractive index can be observed near the energy gap. The absorption coefficient increases in the UV region with the increase of the Mn content.