927 resultados para Laser diode arrays


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研制成功便携式激光尘埃粒子计数器的核心部件——微型光学传感器。该传感器采用直角散射光收集形式。以高功率半导体激光器作为光源,同时采用高性能的PIN型光电二极管作为光电探测器。散射光收集系统为单一大数值孔径的球面反射镜,其对粒子散射光的收集角范围从20°到160°。粒子散射光信号是脉冲信号,其频谱成份主要在高频段,所以在PIN型光电二极管后用一个带通式前置放大器来消除外界的低频噪声.根据米氏散射理论计算了该光学传感器的光散射响应特性,并用聚苯乙烯标准粒子实测了该光学传感器的性能。结果表明,该系统具有高的信噪

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We prepare bismuth-doped borosilicate glasses and the luminescence properties in infrared wavelength region are investigated. Transmission spectrum, fluorescence spectrum and fluorescence decay curve are measured. The glasses exhibit a broad infrared luminescence peaking at 1340nm with the full width at half maximum of about 205nm, and lifetime of 273 mu s when excited by an 808-nm laser diode. The glasses are promising materials for broadband optical amplifiers and tunable lasers.

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Near infrared broadband emission characteristics of bismuth-doped aluminophosphate glass have been investigated. Broad infrared emissions peaking at 1210nm, 1173nm and 1300nm were observed when the glass was pumped by 405nm laser diode (LD), 514nm Ar+ laser and 808nm LD, respectively. The full widths at half maximum (FWHMs) are 235nm, 207nm and 300nm for the emissions at 1210nm, 1173nm and 1300nm, respectively. Based on the energy matching conditions, it is suggested that the infrared emission may be ascribed to P-3(1) --> P-3(0) transition of Bi+. The broadband infrared luminescent characteristics of the glasses indicate that they are promising for broadband optical fiber amplifiers and tunable lasers. (C) 2005 Optical Society of America.

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Near-infrared broadband emission from bismuth-tantalum-codoped germanium oxide glasses was observed at room temperature when the glasses were pumped by an 808 nm laser diode. The emission band covered the 0, E, S, C, and L bands (1260-1625 nm), with a maximum peak at similar to 1310 nm, a FWHM broader than 400 nm, and a lifetime longer than 200 lis. The observed broadband luminescence was attributed to bismuth clusters in the glasses. Bismuth-tantalum-codoped germanium oxide glass might be promising as amplification media for broadly tunable lasers and wideband amplifiers in optical communications. (c) 2005 Optical Society of America.

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We report what we believe to be the first demonstration of laser operation with a novel laser material of Yb3(+) -doped Gd-2 SiO2 (Yb: GSO) pumped by a laser diode at 940 nm. We obtained a low lasing threshold of 1.27 kW/cm(2) with the center wavelength of 1090 nm, which is lower than the value of 1.53 kW/cm(2) predicted for Yb: YAG. The maximal output power of 360 mW was obtained with a 2% output, which corresponds to a slope efficiency up to 19%.

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Nd3+-doped Y2-2x La-2x O-3 (x = 0.08) transparent ceramics were fabricated by conventional fabrication process. Spectroscopic properties of the samples were investigated. The absorption band of Nd3+ : Y1.84La0.16O3 was broad covering the wavelength range 780-850 nm. When doped with 1.5at% Nd3+, the cross sections of the sample at 820 nm and laser diode pumped 808 nm were 1.81 x 10(-20) cm(2) and 1.54 x 10(-20) cm(2), respectively. The strongest emission peak of the sample was centered at 1078 mn with long fluorescent lifetime, broad emission bandwidth and high quantum efficiency. Because of the additive La2O3, the spectroscopic quality parameter (X-Nd) of matrix was' decreased from 1.6 to 0.46, thus the fluorescence branch ratio of F-4(3/2) - (4) I-11/2 transition was increased to 56.82%. These properties of Nd3' : Y1.84La0.16O3 transparent ceramic are benefitial to achieve high efficient laser output and ultrashort modelocked pulse.

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用提拉法生长了掺铬、钕的钆镓石榴石(Cr^4+,Nd^3+:GGG)自调Q激光品体。报道了室温下的吸收光谱和荧光光谱特性。分析了Cr离子浓度对光谱性质的影响。比较了Cr^4+:GGG,Nd^3+:GGG和(Cr^4+,Nd^3+):GGG晶体吸收光谱的关系。测量了(Cr^4+,Nd^3+):GGG晶体和Nd^3+:GGG晶体的荧光寿命,它们分别是33μs和250μs。实验表明,(Cr^4+,Nd^3+):GGG晶体是一种非常有潜力的自调Q激光晶体,可以实现大功率激光器的小型化和全固态化。

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利用激光二极管(LD)抽运新型Na.Yb共掺CaF2(Na.Yb:CaF2)晶体,获得了1.05μm的自调Q激光输出。利用透射率1%的耦合输出镜,得到最低激光输出的抽运阈值功率仅为70mW。在透射率为2%的输出镜条件下,得到最大输出激光功率为390mw,此时激光的斜度效率达到20%。实验详细记录了自调Q脉冲的周期和宽度随抽运功率的变化关系,随着抽运功率的增加,自调Q脉冲的周期和宽度呈指数衰减。同时,还采用单棱镜进行光谱调谐实验,获得了1036~1059nm的自调Q激光调谐输出。

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Spectroscopic properties of (Y0.9-xLa0.1Ybx)(2)O-3 transparent ceramic were studied. Two main absorption peaks of the specimen are centered at 940 and 970 nm, which are suitable for InGaAs laser diode pumping. The main emission peaks were located at 1032 and 1075 nm with larger emission cross-section and longer fluorescence lifetime than those of Yb:Y2O3. These properties of (Y0.9-xLa0.1Ybx)(2)O-3 transparent ceramic are favorable to achieve high efficiency and high power laser output. (c) 2007 Elsevier B.V. All rights reserved.

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In this paper, single crystal of ytterbium (Yb) doped Ca-5(PO4)(3)F (FAP) has been grown along the c-axis by using the Czochralski method. The segregation coefficients of Yb3+ in the Yb:FAP crystal has been determined by ICP-AES method. The absorption spectrum, fluorescence spectrum and fluorescence lifetime of the Yb:FAP crystal has been also measured at room temperature. In the absorption spectra, there are two absorption bands at 904 and 982 nm, respectively, which are suitable for InGaAs diode laser pumping. The absorption cross-section (sigma(abs)) is 5.117 x 10(-20) cm(2) with an FWHM of 4 nm at 982 nm. The emission cross-section is (sigma(em)) 3.678 x 10(-20) cm(2) at 1042 nm. Favorable values of the absorption cross-section at about 982 nm are promising candidates for laser diode (LD) pumping. (c) 2005 Elsevier B.V. All rights reserved.

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For the first time, a quaternary doping system of Er3+, Yb3+, Ce3+, Na+:CaF2 single crystal was demonstrated to have high fluorescence yield in the eye-safe 1.5 mu m region under 980 nm laser diode pumping, with relatively broad and flat gain curves. A simplified model was established to illustrate the effect of Ce3+ on the branching ratio for the Er3+4I11/2 -> I-4(13/2) transition. With 0.2-at.% Er3+ and 2.0-at.% Ce3+ in the quaternary-doped CaF2 crystal, the branching ratio was estimated to be improved more than 40 times by the deactivating effect of Ce3+ on the Er3+ 4I11/2 level. The quaternary-doped CaF2, system shows great potential to achieve high laser performance in the 1.5 mu m region. (c) 2006 Elsevier B.V. All rights reserved.

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文章报道了室温下二极管泵浦Tm:YAP激光器,最大输出功率5.2瓦,波长为1981nm,斜率效率是30%。实验测量800nm左右晶体的吸收谱以及1800nm附近的荧光发射谱。此外,讨论了输出功率随晶体工作温度关系。

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应用中频感应提拉法生长出掺杂浓度为10 at.-%的Yb:YAG与Yb:YAP晶体,对比了室温下两种晶体的吸收和发射光谱特性。结果表明,Yb:YAG晶体比Yb:YAP晶体有更好的激光性能和低的阈值;同时对比发现,Yb:YAP晶体的吸收截面是Yb:YAG晶体的2.16倍,它容易实现LD泵;由于Yb:YAP晶体的各向异性,它有轴向效应明显,它可以产生偏振激光。

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导模法是一种极具应用潜力的晶体生长方法,具有生长速度快,加工成本低的优点,广泛用于生长各种形状的晶体。对导模法的原理、特点和发展历史进行了简单介绍,着重论述了导模法在生长有形蓝宝石和硅晶体中的发展和应用,对目前导模法生长晶体过程中存在的问题做了简单的介绍。