LD抽运Yb:GSO实现1090nm低阈值激光运转


Autoria(s): Xue YH; Wang QY; Chai L; Liu QW; 赵广军; 苏良碧; 徐晓东; Xu J
Data(s)

2006

Resumo

We report what we believe to be the first demonstration of laser operation with a novel laser material of Yb3(+) -doped Gd-2 SiO2 (Yb: GSO) pumped by a laser diode at 940 nm. We obtained a low lasing threshold of 1.27 kW/cm(2) with the center wavelength of 1090 nm, which is lower than the value of 1.53 kW/cm(2) predicted for Yb: YAG. The maximal output power of 360 mW was obtained with a 2% output, which corresponds to a slope efficiency up to 19%.

Identificador

http://ir.siom.ac.cn/handle/181231/5547

http://www.irgrid.ac.cn/handle/1471x/12245

Idioma(s)

中文

Fonte

Xue YH;Wang QY;Chai L;Liu QW;赵广军;苏良碧;徐晓东;Xu J.LD抽运Yb:GSO实现1090nm低阈值激光运转,物理学报,2006,55(1):456-459

Palavras-Chave #光学材料;晶体 #Yb : GSO crystal #laser diode pumped #threshold
Tipo

期刊论文