Epitaxial growth of SiC on complex substrates

Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved.

Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes

Double-crystal X-ray diffraction and I-V characterization have been carried out on the GSMBE grown SiGe/Si p-n heterojunction materials. Results show that the SiGe alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. The crystal perfection and/or the degree of metastability of the Sice alloys have been estimated in terms of the model proposed by Tsao with the experimental results. High-quality p-n heterojunction diodes can be obtained by optimizing the SiGe alloy structures, which limit the alloys in the metastable states. (C) 1999 Elsevier Science B.V. All rights reserved.

The effects of carbonized buffer layer on the growth of SiC on Si

Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.

Growth and characterization of GaN on LiGaO2

The nearly lattice-matched (0 0 1)LiGaO2 substrates have been used for the growth of GaN by LP-MOVPE, GaN epilayers have been grown on both domains at very low input partial pressure of hydrogen and relatively low growth temperature. The differences in the growth rate, crystal and optical qualities of hexagonal GaN epilayers grown on LiGaO2 substrate with two polar domains are investigated. LiGaO2 single crystal with a single domain structure and an adequate surface plane is a promising substrate for the growth of high quality of hexagonal GaN thin films. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

MOVPE growth of GaN and LED on (111) MgAl2O4

The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

Crystal packing motifs of oligothiophenes end-capped with N-containing aryls

Oligothiophenes (OThs) end-capped with 3-quinolyl or pyridyl with nitrogen atom at meta-, ortho- or para-position were synthesized. The single-crystal structures of the resulting molecules, i.e., o-PyTh4, m-PyTh4, p-PyTh4, QuTh2, and QuTh3, were successfully determined by single-crystal X-ray analysis. Pyridyl end-capped OThs; o-PyTh4, m-PyTh4, and p-PyTh4, adopt the different herringbone packing arrangement in crystals depending on the position of the nitrogen atom because of the presence of weak C-H center dot center dot center dot N hydrogen bonds. The p-PyTh4 molecules are linked each other along the long axis of the molecules to form the extended chains by C-H center dot center dot center dot N dimer synthon. For m-PyTh4, the C-H center dot center dot center dot N interactions two-dimensionally extend through C-H center dot center dot center dot N trimer synthon.

Polyol-Mediated Synthesis of PbS Crystals: Shape Evolution and Growth Mechanism

An interesting shape evolution of. PbS crystals, that is, from cubes to (truncated) octahedra and finally to stable star-shaped multipods with six arms along the < 100 > directions is first realized via a facile polyol-mediated reaction between lead acetate and sulfur powder in the absence of surfactants. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Fourier transform infrared (FT-IR) techniques were employed to characterize the samples. We elucidate the important parameters (including reaction temperature and sulfur sources) responsible for the shape-controlled synthesis of PbS crystals.

Nucleation and growth of CUSO4 center dot 5H(2)O crystals on the liquid state stearic acid Langmuir-Blodgett film

Oriented crystallization of CUSO4 center dot 5H(2)O on a Langmuir-Blodgett (LB) film of stearic acid has been studied in the temperature ranges of 73-68 degrees C and 53-20 degrees C, respectively. This is the first time that the LB film at temperature above its melting point has been served as a template to induce nucleation and growth of crystals. The experimental results demonstrated that the LB film in the liquid state has the ability of directing the nucleation and growth of crystals. Moreover, X-ray diffraction patterns of the as prepared crystals revealed that the orientation of the attached crystals on the LB film is affected by temperature greatly.

Seed-Mediated Growth of Nearly Monodisperse Palladium Nanocubes with Controllable Sizes

Nearly monodisperse Pd nanocubes with controllable sizes were synthesized through a seed-mediated growth approach. By using Pd nanocubes of 22 nm in size as seeds, the morphology of the as-grown nanostructures was fixed as single-crystalline, which enabled us to rationally tune the size of Pd nanocubes. The formation mechanism of initial 22 nm nanocubes was also discussed. The size-dependent surface plasmon resonance properties of the as-synthesized Pd nanocubes were investigated. Compared with previous methods, the yield, monodispersity, perfection of the shape formation, and the range of size control of these nanocubes are all improved.

Self-Assembled Growth of Agln(MoO4)(2) Submicroplates into Hierarchical Structures and Their Near-Infrared Luminescent Properties

Layer-controlled hierarchical flowerlike AgIn(MoO4)(2) microstructures with "clean" surfaces using submicroplates as building blocks without introducing any template have been fabricated through a low-cost hydrothermal method. The near-infrared luminescence of lanthanide ion (Nd, Er, and Yb) doped AgIn(MoO4)(2) microstructures, in the 1300-1600 nm region, was discussed and is of particular interest for telecommunication applications. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, electron diffraction, and photoluminescence spectra were used to characterize these materials.

Large-Scale and Template-Free Growth of Free-Standing Single-Crystalline Dendritic Ag/Pd Alloy Nanostructure Arrays

Large-scale arrays consist of dendritic single-crystalline Ag/Pd alloy nanostructures are synthesized for the first time. A simple galvanic replacement reaction is introduced to grow these arrays directly on Ag substrates. The morphology of the products strongly depended on the reaction temperature and the concentration of H2PdCl4 solution. The mechanism of the formation of alloy and the dendritic morphology has been discussed. These alloy arrays exhibit high surface-enhanced Raman scattering (SERS) activity and may have potential applications in investigation of "in situ" Pd catalytic reactions using SERS. Moreover, electrocatalytic measurements suggest that the obtained dendritic Ag/Pd alloy nanostructures exhibit electrocatytic activity toward the oxidation of formic acid.

Growth of highly crystalline CaMoO4 : Tb3+ phosphor layers on spherical SiO2 particles via sol-gel process: Structural characterization and luminescent properties

Highly crystalline CaMoO4:Tb3+ phosphor layers were grown on monodisperse SiO2 particles through a simple sol-gel method, resulting in formation of core-shell structured SiO2@CaMoO4:Tb3+ submicrospheres. The resulting SiO2@CaMoO4: Tb3+ core-shell particles were fully characterized by powder X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy (TEM), photoluminescence (PL), low-voltage cathodoluminescence (CL), and kinetic decays. The XRD results demonstrate that the CaMoO4:Tb3+ layers begin to crystallize on the SiO2 spheres after annealing at 400 degrees C and the crystallinity increases with raising the annealing temperature. SEM and TEM analysis indicates that the obtained submicrospheres have a uniform size distribution and obvious core-shell structure. SiO2@CaMoO4:Tb3+ submicrospheres show strong green emission under short ultraviolet (260 nm) and low-voltage electron beam (1-3 kV) excitation, and the emission spectra are dominated by a D-5(4) -F-7(5) transition of Tb3+(544 nm, green) from the CaMoO4:Tb3+ shells.

Nucleation and growth of glycine crystals with controllable sizes and polymorphs on Langmuir-Blodgett films

Control of crystal polymorph and size is very important in many application fields. Herein we demonstrate that Langmuir-Blodgett (LB) films of stearic acid (SA) and octadecylamine (ODA) can serve as templates and generate different polymorphs of glycine crystals. In the neutral aqueous solutions, gamma-glycine crystallizes on LB films of ODA while the polymorphic outcome becomes the (x-form on LB films of SA. These observed results could be explained by the electrostatic interactions and geometric lattice matching at the LB film/crystal interfaces, respectively. By keeping the appropriate supersaturation, we have successfully controlled the number of crystals grown on LB films; for example, in some certain cases, only one piece of crystal was grown on LB films in solution. Therefore, large crystals of centimeter size could be prepared. These experimental results suggest a new approach to produce an organic crystal with bulk scale.

Tunable synthesis, growth mechanism, and magnetic properties of La0.5Ba0.5MnO3

La0.5Ba0.5MnO3 products with novel flowerlike, microcube, and nanocube structures were successfully synthesized by a simple hydrothermal route by controlling the alkalinity of the reaction solutions. The synthesized products were systematically studied by X-ray powder diffraction, field-emission scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The results showed that the formation of the flowerlike structures with a layer assembly experienced a nucleation-aggregation-crystallization growth process, while the cubic structures experienced a nucleation-crystallization growth process due to the effect of different alkalinity in the reaction solutions. The higher alkalinity also led to a decrease in the size in the cubic structures. Suitable temperature and pressure were demonstrated to be crucial to the formation of the flowerlike structures by carrying out further control experiments. The measurement of the magnetic properties of three samples obtained at different alkaline conditions indicated that the size of the La0.5Ba0.5MnO3 products had an obvious influence on their properties; however, the dependence of the properties upon the morphology of the La0.5Ba0.5MnO3 products was minor.