MOVPE growth of GaN and LED on (111) MgAl2O4

The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

于2010-11-15批量导入

zhangdi于2010-11-15 17:02:36导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-15T09:02:36Z (GMT). No. of bitstreams: 1 3057.pdf: 153976 bytes, checksum: b8cdcb163e0468d4a0742e07a704bb66 (MD5) Previous issue date: 1998

Japan Soc Appl Phys.; Inst Electr Informat & Commun Engineers.; IEEE.; Electron Devices Soc.

Chinese Acad Sci, Inst Semicond, Natl Integrated Optoelect Lab, Beijing 100083, Peoples R China; Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China; Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA; Chinese Acad Sci, Beijing Lab Electron Microscopy, Ctr Condensed Matter, Beijing 100080, Peoples R China; Chinese Acad Sci, Inst Semicond, Lab Semicond Mat, Beijing 100083, Peoples R China

Japan Soc Appl Phys.; Inst Electr Informat & Commun Engineers.; IEEE.; Electron Devices Soc.