High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides

We have shown that high energy ion implantation enhanced intermixing (HE-IIEI) technology for quantum well (QW) structures is a powerful technique which can be used to blue shift the band gap energy of a QW structure and therefore decrease its band gap absorption. Room temperature (RT) photoluminescence (PL) and guided-wave transmission measurements have been employed to investigate the amount of blue shift of the band gap energy of an intermixed QW structure and the reduction of band gap absorption, Record large blue shifts in PL peaks of 132 nm for a 4-QW InGaAs/InGaAsP/InP structure have been demonstrated in the intermixed regions of the QW wafers, on whose non-intermixed regions, a shift as small as 5 nm is observed. This feature makes this technology very attractive for selective intermixing in selected areas of an MQW structure. The dramatical reduction in band gap absorption for the InP based MQW structure has been investigated experimentally. It is found that the intensity attenuation for the blue shifted structure is decreased by 242.8 dB/cm for the TE mode and 119 dB/cm for the TM mode with respect to the control samples. Electro-absorption characteristics have also been clearly observed in the intermixed structure. Current-Voltage characteristics were employed to investigate the degradation of the p-n junction in the intermixed region. We have achieved a successful fabrication and operation of Y-junction optical switches (JOS) based on MQW semiconductor optical amplifiers using HE-IIEI technology to fabricate the low loss passive waveguide. (C) 1997 Published by Elsevier Science B.V.

Low Power Integrated Circuits for Wireless Neural Recording Applications

A group of prototype integrated circuits are presented for a wireless neural recording micro-system. An inductive link was built for transcutaneous wireless power transfer and data transmission. Power and data were transmitted by a pair of coils on a same carrier frequency. The integrated receiver circuitry was composed of a full-wave bridge rectifier, a voltage regulator, a date recovery circuit, a clock recovery circuit and a power detector. The amplifiers were designed with a limited bandwidth for neural signals acquisition. An integrated FM transmitter was used to transmit the extracted neural signals to external equipments. 16.5 mW power and 50 bps - 2.5 Kbps command data can be received over 1 MHz carrier within 10 mm. The total gain of 60 dB was obtained by the preamplifier and a main amplifier at 0.95Hz - 13.41 KHz with 0.215 mW power dissipation. The power consumption of the 100 MHz ASK transmitter is 0.374 mW. All the integrated circuits operated under a 3.3 V power supply except the voltage regulator.

Implantable Microsystem for Wireless Neural Recording Applications

A prototype microsystem is presented for wireless neural recording application. An inductive link was built for transcutaneous wireless power transfer and data transmission. Total 16.5 mW power and 50 bps - 2.5 Kbps command data can be received over 1 - 5 MHz with a distance of 0-10 mm. The integrated amplifiers were designed with a limited bandwidth for neural signals acquisition. The gain of 60 dB was obtained by preamplifier at 7 Hz - 3 KHz. An integrated FM transmitter was used to transmit the extracted neural signals to external equipments with 0.374 - 2 mW power comsumption and a maximum data rate of 500 Kbps at 100 MHz. All the integrated circuits modules except the power recovery circuit were tested or stimulated under a 3.3 V power supply, and fabricated in standard CMOS processing.

Experimental and theoretical analysis of nondegenerate ultrabroadband chirped pulse optical parametric amplification

Experimental investigations of nondegenerate ultrabroadband chirped pulse optical parametric amplification have been carried out. The general mathematical expressions for evaluating parametric bandwidth, gain and gain bandwidth for arbitrary three-wave mixing parametric amplifiers are presented. In our experiments, a type-I noncollinear phase-matched optical parametric amplifier based on lithium triborate, which was pumped by a 5-ns second harmonic pulses from a Q-switched Nd:YAG operating at 10 Hz, seeded by a 14-fs Ti:sapphire laser at 800 nm, was presented. The 0.85 nJ energy of input chirped signal pulse with 57-FWHM has been amplified to 3.1 muJ at pump intensity 3 GW/cm(2), the corresponding parametric gain reached 3.6 x 10(3), the 53 nm-FWHM gain spectrum bandwidth of output signal has been obtained. The large gain and broad gain bandwidth, which have been confirmed experimentally, provide great potentials to amplify efficiently the broad bandwidth femtosecond light pulses to generate new extremes in power, intensity, and pulse duration using optical parametric chirped pulse amplifiers pumped by powerful nanosecond systems.

Hybrid numerical methods for exponential models of growth

A series of novel numerical methods for the exponential models of growth are proposed. Based on these methods, hybrid predictor-corrector methods are constructed. The hybrid numerical methods can increase the accuracy and the computing speed obviously, as well as enlarge the stability domain greatly. (c) 2005 Published by Elsevier Inc.

Environmentally stable ytterbium figure-of-eight fiber laser producing 177-fs pulses

Pulses of 177 fs and 1035 nm, with average power of 1.2 mW, have been generated directly from a passively mode-locked Yb-doped figure-of-eight fiber laser, with a nonlinear optical loop mirror for mode-locking and pairs of diffraction gratings for intracavity dispersion compensation. To our knowledge, these are the shortest pulses ever to come from a passively mode-locked Yb-doped figure-of-eight fiber laser. This represents a 5-fold reduction in pulse duration compared with that of previously reported passively mode-locked Yb-doped figure-of-eight fiber lasers. Stable pulse trains are produced at the fundamental repetition rate of the resonator, 24.0 MHz. (c) 2007 Elsevier B.V. All rights reserved.

Generation of 207-femtosecond pulses from a ytterbium figure-of-eight fibre laser

We report the generation of 207-fs pulses with 1.2mW average power at 1036 nm directly from a passively mode-locked Yb-doped fibre laser with a nonlinear optical loop mirror for mode-locking and pairs of diffraction gratings for intracavity dispersion compensation. These results imply a 4-fold reduction in pulse duration over previously reported figure-of-eight cavity passively mode-locked Yb-doped fibre lasers. Stable pulse trains are produced at the fundamental repetition rate of the resonator, 24.0MHz. On the other hand, this laser offers a cleaner spectrum and greater stability and is completely self-starting.

Compact and efficient triple-pass optical parametric chirped pulse amplification

Compact and efficient triple-pass optical parametric chirped pulse amplification in a single crystal has been demonstrated. The signal was triple-pass amplified in a single nonlinear crystal by a nanosecond pump pulse. The first-pass optical parametric amplification is completely phase matched in the plane of the maximum effective nonlinearity, and the other two passes work symmetrically near to the first-pass optical parametric amplification plane. This architecture efficiently increases the overall gain, overcomes the optical parametric fluorescence, and clearly simplifies the amplification scheme.

Analysis of the optical confinement factor in semiconductor lasers

We derive formulas for the optical confinement factor Gamma from Maxwell's equations for TE and TM modes in the slab waveguide. The numerical results show that the formulas yield correct mode gain for the modes propagating in the waveguide. We also compare the formulas with the standard definition of Gamma as the ratio of power flow in the active region to the total power flow. The results show that the standard definition will underestimate the difference of optical confinement factors between TE and TM modes, and will underestimate the difference of material gains necessary for polarization insensitive semiconductor laser amplifiers. It is important to use correct optical confinement factors for designing polarization insensitive semiconductor laser amplifiers. For vertical cavity surface-emitting lasers, the numerical results show that Gamma can be defined as the proportion of the product of the refractive index and the squared electric field in the active region. (C) 1996 American Institute of physics.

Influence of a tilted cavity on quantum-dot optoelectronic active devices

Quantum-dot laser diodes (QD-LDs) with a Fabry-Perot cavity and quantum-dot semiconductor optical amplifiers (QD-SOAs) with 7° tilted cavity were fabricated. The influence of a tilted cavity on optoelectronic active devices was also investigated. For the QD-LD, high performance was observed at room temperature. The threshold current was below 30 mA and the slope efficiency was 0.36 W/A. In contrast, the threshold current of the QD-SOA approached 1000 mA, which indicated that low facet reflectivity was obtained due to the tilted cavity design.A much more inverted carrier population was found in the QD-SOA active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. Due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the QD-SOA was 81.6 nm at the injection current of 120 mA, which was ideal for broad bandwidth application in a wavelength division multiplexing system. In addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6-8 nm,which is approximately equal to the homogeneous broadening of quantum dots.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well

Effects of SiO2, encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO2-capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO2 cap-layer. A simple model [1] was used to describe the SiO2-enhanced blueshift of the low temperature PL peak energy.

Tunable and switchable multiwavelength fiber lasers with broadband range based on nonlinear polarization rotation technique

Switchable multiwavelength fiber laser outputs with a wide tuning range are experimentally observed in an ultralong cavity. Because of the long spooled single-mode fiber and filter effect of the cavity, multiwavelength lasers with the spacing of similar to 14.5 nm are obtained. The proposed fiber laser has the capacity of simultaneously emitting the three wavelengths. By means of adjusting the polarization controllers, the arbitrary single- and dual-wavelength operations are achieved in our laser. (C) 2010 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3485754]

多路谱仪放大器输出信号的读出与数据采集

A read-out and data acquisition system for the outputs of multi-channel spectroscopy amplifiers is introduced briefly in this paper.The 16-channel gating integrator/multiplexer developed by us and PXI-DAQ card are used to construct this system.A virtual instrument system for displaying,indicating,measuring and recording of output waveform is accomplished by integrating the PC,hardware,software together flexibly based on the Lab Windows/CVI platform in our read-out and data acquisition system.In this system,...中文文摘：简要介绍一个针对多路谱仪放大器的读出与数据采集方法与系统。该系统基于16通道门积分/选通输出电路和通用PXI-DAQ卡构建。利用Lab Windows/CVI平台构建虚拟仪器,灵活地将计算机、硬件、软件结合起来,设计了一个读出与数据采集系统。在该系统中,一个ADC通道可以面对16个谱仪放大器的输出,有效地提高了系统的集成度,降低了数据采集系统的成本。该设计为利用通用型谱仪放大器构建数百参数的信号读出与数据采集系统提供了一种新的方法。通过实验验证,证明该系统具有智能化、可靠性高、实时性强、成本低等优点。