A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs

A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （SLD） with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy （MOVPE）. At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.

Fabrication of semiconductor optical amplifiers and a novel gain measuring technique

The design and fabrication of 1550 nm semiconductor optical amplifiers (SOAs) and the characteristics of the fabricated SOA are reported. A novel gain measurement technique based on the integrations of the product of emission spectrum and a phase function over one mode interval is proposed for Fabry-Perot semiconductor lasers.

Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) lasers with broad waveguide. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- GaAs substrate. For 3 mu m stripe ridge waveguide lasers, the threshold current is 30 mA and the maximum output power and the output power operating in fundamental mode are 350 mW and 200 mW, respectively. The output power from the single mode fiber is up to 100 mW, the coupling efficiency is 50%. We also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 A/cm(2), a high slope efficiency of 1.03 W/A and a far-field pattern of 40 x 6 degrees are obtained. The maximum output power of 3.5 W is also obtained for 100 mu m wide coated lasers. (C) 2000 Elsevier Science B.V. All rights reserved.

Broadband short-range surface plasmon structures for absorption enhancement in organic photovoltaics

We theoretically demonstrate a polarization-independent nanopatterned ultra-thin metallic structure supporting short-range surface plasmon polariton (SRSPP) modes to improve the performance of organic solar cells. The physical mechanism and the mode distribution of the SRSPP excited in the cell device were analyzed, and reveal that the SRSPP-assisted broadband absorption enhancement peak could be tuned by tailoring the parameters of the nanopatterned metallic structure. Three-dimensional finite-difference time domain calculations show that this plasmonic structure can enhance the optical absorption of polymer-based photovoltaics by 39% to 112%, depending on the nature of the active layer (corresponding to an enhancement in short-circuit current density by 47% to 130%). These results are promising for the design of organic photovoltaics with enhanced performance.

Structure and properties of InAs/AlAs quantum dots for broadband emission

The InAs quantum dots (QDs) on an AlAs layer are grown on GaAs substrates by molecular beam epitaxy technique. The properties of materials and optics of such QD structures have been investigated by cross sectional transmission electron microscopy and photoluminescence (PL) techniques. It is discovered that the inhomogeneous strain filed mainly exists below InAs QDs layers in the case of no wetting layer. The full width at half maximums (FWHMs) and intensities of PL emission peaks of InAs QDs are found to be closely related to the thickness of the thin AlAs layers. The InAs QDs on an eight monolayer AlAs layer, with wide FWHMs and large integral intensity of PL emission peaks, are favorable for producing broadband QD superluminescent diodes, external-cavity QD laser with large tuning range.

Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices

City Univ Hong Kong

Use of semiconductor optical amplifiers in signal processing applications

We describe a 42.6 Gbit/s all-optical pattern recognition system which uses semiconductor optical amplifiers (SOAs). A circuit with three SOA-based logic gates is used to identify the presence of specific port numbers in an optical packet header.

Broadband optical cavity absorption spectroscopy in the near-ultraviolet: applications in atmospheric chemistry

A novel spectroscopic method, incoherent broadband cavity enhanced absorption spectroscopy (IBBCEAS), has been modified and extended to measure absorption spectra in the near-ultraviolet with high sensitivity. The near-ultraviolet region extends from 300 to 400 nm and is particularly important in tropospheric photochemistry; absorption of near-UV light can also be exploited for sensitive trace gas measurements of several key atmospheric constituents. In this work, several IBBCEAS instruments were developed to record reference spectra and to measure trace gas concentrations in the laboratory and field. An IBBCEAS instrument was coupled to a flow cell for measuring very weak absorption spectra between 335 and 375 nm. The instrument was validated against the literature absorption spectrum of SO2. Using the instrument, we report new absorption cross-sections of O3, acetone, 2-butanone, and 2-pentanone in this spectral region, where literature data diverge considerably owing to the extremely weak absorption. The instrument was also applied to quantifying low concentrations of the short-lived radical, BrO, in the presence of strong absorption by Br2 and O3. A different IBBCEAS system was adapted to a 4 m3 atmosphere simulation chamber to record the absorption cross-sections of several low vapour pressure compounds, which are otherwise difficult to measure. Absorption cross-sections of benzaldehyde and the more volatile alkyl nitrites agree well with previous spectra; on this basis, the cross-sections of several nitrophenols are reported for the first time. In addition, the instrument was also used to study the optical properties of secondary organic aerosol formed following the photooxidation of isoprene. An extractive IBBCEAS instrument was developed for detecting HONO and NO2 and had a sensitivity of about 10-9 cm-1. This instrument participated in a major international intercomparison of HONO and NO2 measurements held in the EUPHORE simulation chamber in Valencia, Spain, and results from that campaign are also reported here.

All-optical signal processing using semiconductor optical amplifiers for next generation optical networks

This thesis details an experimental and simulation investigation of some novel all-optical signal processing techniques for future optical communication networks. These all-optical techniques include modulation format conversion, phase discrimination and clock recovery. The methods detailed in this thesis use the nonlinearities associated with semiconductor optical amplifiers (SOA) to manipulate signals in the optical domain. Chapter 1 provides an introduction into the work detailed in this thesis, discusses the increased demand for capacity in today’s optical fibre networks and finally explains why all-optical signal processing may be of interest for future optical networks. Chapter 2 discusses the relevant background information required to fully understand the all-optical techniques demonstrated in this thesis. Chapter 3 details some pump-probe measurement techniques used to calculate the gain and phase recovery times of a long SOA. A remarkably fast gain recovery is observed and the wavelength dependent nature of this recovery is investigated. Chapter 4 discusses the experimental demonstration of an all-optical modulation conversion technique which can convert on-off- keyed data into either duobinary or alternative mark inversion. In Chapter 5 a novel phase sensitive frequency conversion scheme capable of extracting the two orthogonal components of a quadrature phase modulated signal into two separate frequencies is demonstrated. Chapter 6 investigates a novel all-optical clock recovery technique for phase modulated optical orthogonal frequency division multiplexing superchannels and finally Chapter 7 provides a brief conclusion.

Broadband cavity-enhanced absorption spectroscopy with incoherent light

Although broadband incoherent light does not efficiently couple into a high-finesse optical cavity, its transmission is readily detectable and enables applications in cavity-enhanced absorption spectroscopy in the gas phase, liquid phase and on surfaces. This chapter gives an overview of measurement principles and experimental approaches implementing incoherent light sources in cavity-enhanced spectroscopic applications. The general principles of broadband CEAS are outlined and general “pros and cons” discussed, detailing aspects like cavity mirror reflectivity calibration or the establishment of detection limits. Different approaches concerning light sources, cavity design and detection schemes are discussed and a comprehensive overview of the current literature based on a methodological classification scheme is also presented.

Broadband chaos generated by an optoelectronic oscillator.

We study an optoelectronic time-delay oscillator that displays high-speed chaotic behavior with a flat, broad power spectrum. The chaotic state coexists with a linearly stable fixed point, which, when subjected to a finite-amplitude perturbation, loses stability initially via a periodic train of ultrafast pulses. We derive approximate mappings that do an excellent job of capturing the observed instability. The oscillator provides a simple device for fundamental studies of time-delay dynamical systems and can be used as a building block for ultrawide-band sensor networks.

High-fidelity, broadband stimulated-Brillouin-scattering-based slow light using fast noise modulation.

We demonstrate a 5-GHz-broadband tunable slow-light device based on stimulated Brillouin scattering in a standard highly-nonlinear optical fiber pumped by a noise-current-modulated laser beam. The noisemodulation waveform uses an optimized pseudo-random distribution of the laser drive voltage to obtain an optimal flat-topped gain profile, which minimizes the pulse distortion and maximizes pulse delay for a given pump power. In comparison with a previous slow-modulation method, eye-diagram and signal-to-noise ratio (SNR) analysis show that this broadband slow-light technique significantly increases the fidelity of a delayed data sequence, while maintaining the delay performance. A fractional delay of 0.81 with a SNR of 5.2 is achieved at the pump power of 350 mW using a 2-km-long highly nonlinear fiber with the fast noise-modulation method, demonstrating a 50% increase in eye-opening and a 36% increase in SNR in the comparison.

Broadband electromagnetic cloaking with smart metamaterials.

The ability to render objects invisible with a cloak that fits all objects and sizes is a long-standing goal for optical devices. Invisibility devices demonstrated so far typically comprise a rigid structure wrapped around an object to which it is fitted. Here we demonstrate smart metamaterial cloaking, wherein the metamaterial device not only transforms electromagnetic fields to make an object invisible, but also acquires its properties automatically from its own elastic deformation. The demonstrated device is a ground-plane microwave cloak composed of an elastic metamaterial with a broad operational band (10-12 GHz) and nearly lossless electromagnetic properties. The metamaterial is uniform, or perfectly periodic, in its undeformed state and acquires the necessary gradient-index profile, mimicking a quasi-conformal transformation, naturally from a boundary load. This easy-to-fabricate hybrid elasto-electromagnetic metamaterial opens the door to implementations of a variety of transformation optics devices based on quasi-conformal maps.