Optical responses of ZnSe quantum dots in silica gel glasses

The characteristic features of the absorption and photoluminescence spectra of ZnSe quantum dots (QDs) inside a silica matrix derived from a sol-gel method were studied at room temperature. Compared with the bulk materials, the absorption edges of ZnSe QDs in silica gel glass were shifted to higher energies and the spectra exhibited the discrete excitonic features due to the quantum confinement effects. Besides the band-edge emission, photoluminescence at ultraviolet excitation also showed the emissions related to the higher excitonic states. (C) 2004 Elsevier B.V. All rights reserved.

Micro Fabry-Perot interferometers in silica fibers machined by femtosecond laser

Micro Fabry-Perot (F-P) interferometers (MFPIs) are machined in a single-mode fiber (SMF) and a photonic crystal fiber (PCF) by using a near-infrared femtosecond laser, respectively. The strain and temperature characteristics of the two MFPIs with an identical cavity length are investigated and the experimental results show that the strain sensitivity of the PCF-based MFPI is smaller than that of the SMF-based MFPI due to their different waveguide structures, while the two MFPIs have close temperature sensitivities which are much smaller than that of an in-line SMF etalon sensor reported previously. These MFPIs in silica fibers are compact, stable, inexpensive, capable for mass-production and easy fabrication, offering great potentials for wide sensing applications. (c) 2007 Optical Society of America.

基于silica波导光栅的单纤三向器的混合集成研究

通过有源实时监控系统,采用手动和自动相结合的方法,将光纤、silica基阵列波导光栅(AWG)、1310 nm激光器(LD)平台和1490 nm、1550 nm探测器(PD)平台用紫外同化胶混合集成为一新型单纤三向器.在耦合集成过程中,LD在15 mA偏置电流下,三向器的上行出纤功率大约为-4 dBm,LD和波导的耦合效率大约40%;当三向器输入1 550 nm光功率为1 mW,PD在2.6 V反向偏压下,下行输出光电流大约为76 μA,波导和PD的耦合效率大约为42%.三向器中采用了对管PD集成方法.

Design and numerical analysis for low birefringence silica on silicon waveguides

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.

Polarization-Insensitive Silica on Silicon Arrayed Waveguide Grating Design

A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The stress distribution and effective refractive index of waveguide fabricated by this approach are calculated using finite element and finite difference beam propagation method,respectively.The results of these studies indicate that the stress of silica on silicon optical waveguide can be matched in parallel and vertical direction and AWG polarization dependent wavelength (PDλ) can be reduced effectively due to side-silicon layer.

Stress analysis of silica-based arrayed waveguide grating by a finite element method

The stress distribution in silica optical waveguides on silicon is calculated by using finite element method (FEM). The waveguides are mainly subjected to compressive stress along the x direction and the z direction, and it is accumulated near the interfaces between the core and cladding layers. The shift of central wavelength of silica arrayed waveguide grating (AWG) on silicon-substrate with the designed wavelength and the polarization dependence are caused by the stress in the silica waveguides.

Preparation and characterization of erbium doped sol-gel silica glasses

Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 ma, corresponding to the I-4(13/2)-I-4(15/2) transition, its full width at half-maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 Mn instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended X-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.

Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.