966 resultados para GaAs single crystal
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CaNb(2)O(6) single crystal fibers were grown by the laser-heated pedestal growth technique, directly from the starting reagents. Optically transparent fibers were obtained in the form of rods with elliptical cross-section, free from cracks, impurities, and secondary phases, with an average diameter of 0.4 mm and about 20 mm of length. The fibers grew within the orthorhombic Pbcn columbite structure, with the growth axis nearly parallel to the crystallographic a-direction. The parameters b and c were parallel to the shorter and larger ellipsis axes. A special setup using a microscope was developed to obtain the far-infrared reflectivity spectra of these micrometer-sized fibers, allowing the identification and assignment of 34 of the 38 polar phonons foreseen for the material. From these phonons, the intrinsic dielectric constant ( of 185 THz) could be estimated, showing the potential of the material for applications in microwave circuitry. These results, along with previous polarized Raman data (Cryst. Growth Des. 2010, 10, 1569), allow us to present a comprehensive set of optical phonon modes and to discuss the potential use of designed CaNb(2)O(6) microcrystals in compact optical devices.
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Cadmium chloride complex of 1-furoyl-3-cyclohexylthiourea (CyTu) was prepared and characterized by elemental analysis, IR, and Raman spectroscopy. The structure of the complex was determined by single crystal X-ray methods (space group Bbab, a = 20.918(1), b = 23.532(1), c = 23.571(1) angstrom, = = , Z = 8). Each cadmium has distorted octahedral geometry, coordinated by two chlorides and the thiocarbonyl sulfurs from four CyTu molecules. All the spectroscopic data are consistent with coordination of CyTu by sulfur to cadmium.
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Platinum stepped surfaces vicinal to the (1 1 0) crystallographic pole have been investigated voltammetrically in 0.1 M HClO(4) and 0.1 M H(2)SO(4) solutions. Changes in the voltammetric profile with the step density suggest the existence of two types of surface sites, that has been ascribed to linear and bidimensional domains. This result indicates the existence of important restructuring processes that separate the real surface distribution from the nominal one. The electronic properties of the surfaces have been characterized with the CO charge displacement method and the potential of zero total charge has been calculated as a function of the step density. (c) 2009 Elsevier B.V. All rights reserved.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Conductivity behavior of the Bi12TiO20 single crystal was investigated by the electric modulus spectroscopy, which was carried out in the frequency range from 5 Hz to 13 MHz and at temperatures higher than 400 degrees C. The resistance curve exhibits a set of properties correlated to a negative temperature coefficient thermistor. In the temperature range investigated, the characteristic parameter (,8) of the thermistor is equal to 4834 degrees C. Temperature coefficients of the resistance (a) were derived being equal to -3.02 x 10(-2) degrees C-1 at 400 degrees C and equal to -9.86 x 10(-3) degrees C-1 at 700 degrees C. The nature of the electric relaxation phenomenon and magnitude dc conductivity are approached. (c) 2005 American Institute of Physics.
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Electrical conductive textured LaNiO3/SrTiO3 (100) thin films were successfully produced by the polymeric precursor method. A comparison between features of these films of LaNiO3 (LNO) when heat treated in a conventional furnace (CF) and in a domestic microwave (MW) oven is presented. The x-ray diffraction data indicated good crystallinity and a structural orientation along the (h00) direction for both films. The surface images obtained by atomic force microscopy revealed similar roughness values, whereas films LNO-MW present slightly smaller average grain size (similar to 80 nm) than those observed for LNO-CF (60-150 nm). These grain size values were in good agreement with those evaluated from the x-ray data. The transport properties have been studied by temperature dependence of the electrical resistivity rho(T) which revealed for both films a metallic behavior in the entire temperature range studied. The behavior of rho(T) was investigated, allowing to a discussion of the transport mechanisms in these films. (C) 2007 American Institute of Physics.
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GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity. (C) 2003 American Institute of Physics.
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Water-dispersed magnetite nanoparticle synthesis from iron(II) chloride in dimethyl sulfoxide (DMSO)-water solution at different DMSO-water ratios in alkaline medium was reported. TEM and XRD results suggest a single-crystal formation with mean particle size in the range 4-27 nm. Magnetic nanoparticles are formed by the oxidative hydrolysis reaction from green rust species that leads to FeOOH formation, followed by autocatalysis of the adsorbed available Fe(II) on the FeOOH surfaces. The available hydroxyl groups seem to be dependent on the DMSO-water ratio due to strong molecular interactions presented by the solvent mixture. Goethite phase on the magnetite surface was observed by XRD data only for sample synthesized in the absence of DMSO. In addition, cyclic voltammetry with carbon paste electroactive electrode (CV-CPEE) results reveal two reduction peaks near 0 and +400 mV associated with the presence of iron(III) in different chemical environments related to the surface composition of magnetite nanoparticles. The peak near +400 mV is related to a passivate thin layer surface such as goethite on the magnetite nanoparticle, assigned to the intensive hydrolysis reaction due to strong interactions between DMSO-water molecules in the initial solvent mixture that result in a hydroxyl group excess in the medium. Pure magnetite phase was only observed in the samples prepared at 30% (30W) and 80% (80W) water in DMSO in agreement with the structured molecular solvent cluster formation. The goethite phase present on the, magnetite nanoparticle surface like a thin passivate layer only was detectable using CV-CPEE, which is a very efficient, cheap, and powerful tool for surface characterization, and it is able to determine the passivate oxyhydroxide or oxide thin layer presence on the nanoparticle surface.
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The oxidation of ethanol (EtOH) at Pt(111) electrodes is dominated by the 4e path leading to acetic acid. The inclusion of surface defects such as those present on stepped surfaces leads to an increase of the reactivity towards the most desirable 12e path leading to CO2 as final product. This path is also favored when the methyl group is more oxidized, as in the case of ethylene glycol (EG) that spontaneously decomposes to CO on Pt(111) electrodes, thus showing a more effective breaking of the C-C bond. Some trends in reactivity can be envisaged when other derivative molecules are compared at well-ordered electrodes. This strategy was used in the past, but the improvement in the electrode pretreatment and the overall information available on the subject suggest that relevant information is still missing.
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We report the component E ┴ c of the pseudodielectric-function tensor <ε(E)> = <ε1(E)> + i< ε2(E)> of γ-phase single-crystal InSe, obtained from 1.5 to 9.2 eV by vacuum-ultraviolet spectroscopic ellipsometry with the sample at room temperature. Overlayer artifacts were reduced as far as possible by measuring fresh surfaces prepared by cleavage. Accurate critical-point energies of observed structures were obtained by a combined method of spectral analysis.
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A Co-doped silica film was deposited on the surface of a Si(100) wafer and isothermally annealed at 750 degrees C to form spherical Co nanoparticles embedded in the silica film and a few atomic layer thick CoSi2 nanoplatelets within the wafer. The structure, morphology, and spatial orientation of the nanoplatelets were characterized. The experimental results indicate that the nanoplatelets exhibit hexagonal shape and a uniform thickness. The CoSi2 nanostructures lattice is coherent with the Si lattice, and each of them is parallel to one of the four planes belonging to the {111} crystallographic form of the host lattice. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683493]
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The objective of this paper is to show the dependence relationship between the crystallographic orientations upon brittle-to-ductile transition during diamond turning of monocrystalline silicon. Cutting tests were performed using a -5 degrees rake angle round nose diamond tool at different machining scales. At the micrometre level, the feedrate was kept constant at 2.5 micrometres per revolution (mu m/r), and the depth of cut was varied from 1 to 5 mu m. At the submicrometre level, the depth of cut was kept constant at 500 nm and the feedrate varied from 5 to 10 mu m/r. At the micrometre level, the uncut shoulder generated with an interrupted cutting test procedure provided a quantitative measurement of the ductile-to-brittle transition. Results show that the critical chip thickness in silicon for ductile material removal reaches a maximum of 285 nm in the [100] direction and a minimum of 115 nm in the [110] direction, when the depth of cut was 5 mu m. It was found that when a submicrometre depth of cut was applied, microcracks were revealed in the [110] direction, which is the softer direction in silicon. Micro Raman spectroscopy was used to estimate surface residual stress after machining. Compressive residual stress in the range 142 MPa and smooth damage free surface finish was probed in the [100] direction for a depth of cut of 5 mu m, whereas residual stresses in the range 350 MPa and brittle damage was probed in the [110] direction for a depth of cut of 500 nm.
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Calcium tantalite (CaTa2O6) single crystal fibers were obtained by the laser-heated pedestal growth method (LHPG). At room temperature, this material can present three polymorphic modifications. The rapid crystallization inherent to the LHPG method produced samples within the Pm3 space group, with some chemical disorder. In order to check for polymorphic-induced transformations, the CaTa2O6 fibers have been submitted to different thermal treatments and investigated by micro-Raman spectroscopy. For short annealing times (15 min) at 1200 °C, the cubic modification was maintained, though with an improved crystalline quality, as evidenced by the enhanced inelastic scattered intensity (by ca. 250%) and narrowing of Raman bands. The polarized Raman spectra respected very well the predicted symmetries and the selection rules for this cubic modification. On the other hand, long annealing times (24 h) at 1200 °C led to a complete (irreversible) polymorphic transformation. The Raman bands became still more intense (ca. 15 times larger than for the as-grown fibers), narrower, and several new modes appeared. Also, the spectra became unpolarized, demonstrating a polycrystalline nature of the transformed crystals. The observed Raman modes could be fully assigned to an orthorhombic modification of CaTa2O6 belonging to the Pnma space group.