Ellipsometric Study of Single-Crystal γ-Inse From 1.5 To 9.2 Ev

We report the component E ┴ c of the pseudodielectric-function tensor <ε(E)> = <ε1(E)> + i< ε2(E)> of γ-phase single-crystal InSe, obtained from 1.5 to 9.2 eV by vacuum-ultraviolet spectroscopic ellipsometry with the sample at room temperature. Overlayer artifacts were reduced as far as possible by measuring fresh surfaces prepared by cleavage. Accurate critical-point energies of observed structures were obtained by a combined method of spectral analysis.