Optimum temperature for the growth performance of juvenile orange-spotted grouper (Epinephelus coioides H.)

Effects of water temperature (17, 21, 25, 30 and 35 degrees C) and body size (14.75-281.41 g initial body weight) on food consumption, growth, feed conversion, and dry matter content in orange-spotted grouper fed to satiation were investigated. The combined effect of temperature (T, degrees C) and body weight (W, g) on maximum food consumption (C-max, g/day) was described as: InCmax= -7.411+0.828 lnW+0.317T-0.004 7T(2), and the optimum feeding temperature was 33.9 degrees C. The combined effect of temperature and body weight on growth (G) was described as: InG= -4.461-0.208lnW+0.394T-0.006 3T(2). The optimum growth temperature was 31.4 degrees C, whereas overall growth rates were high at 25, 30 and 35 degrees C. Feed conversion efficiencies (FCE, %), increasing first and then decreasing with increasing temperature, averaged from 1.8 to 2.1 in terms of dry weight of food fish. The optimum temperature for FCE tended to be lower than that for growth or feeding. Dry matter content increased with both increasing water temperature (17, 25, 30 and 35 degrees C) and body weight, and the combined effect of temperature and body weight on dry matter content (DM, %) was described as: lnDM =3.232+0.01 4 lnW-0.004 4T+0.001 2TlnW.

cDNA cloning and characterization of a novel SNX gene differentially expressed in previtellogenic oocytes of gibel carp

To understand the molecular events governing fish oogenesis, a multiple technique was used to identify the genes differentially expressed at different phases during fish oogenesis. This technique is a combination of suppression subtractive hybridization, SMART cDNA synthesis and RACE-PCR. Here we report the cDNA cloning and expression characterization of a novel SNX gene based on its differential transcription between previtellogenic and fully mature oocytes in naturally gynogenetic gibel carp. First, a cDNA fragment selectively expressed in previtellogenic oocytes was identified and used to screen a SMART cDNA library prepared from the same mRNA sample by RACE-PCR for cloning fully length cDNA. The full length cDNA was 1392-bp long and coded for a novel SNX protein with 225 amino acids. The 5' UTR had 72 bp and 3' UTR had 642 bp. Unlike most of maternal genes that are transcribed after vitellogenesis and stored in oocytes, this gene is expressed at a higher level in the previtellogenic oocytes and at a much lower level in fully matured oocytes. However, RT-PCR analysis of tissues showed it was ubiquitous transcription. The novel gene is named fish sorting nexin (fSNX), because it contains a conserved PX domain. The fact which major expression of the gene occurs in the previtellogenic oocytes suggests that it might have an important function in the oogenesis. (C) 2003 Elsevier Inc. All rights reserved.

An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

The influence of well thickness on the electroluminescence (EL) of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition is investigated. It is found that the peak wavelength of EL increases with the increase of well thickness when the latter is located in the range of 3.0-5.1 nm. The redshift is mainly attributed to the quantum confined Stark effect (QCSE). As a contrast, it is found that the EL intensity of InGaN/GaN MQWs increases with the increase of well thickness in spite of QCSE. The result of X-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of EL intensity of InGaN/GaN MQWs. (C) 2009 Elsevier B.V. All rights reserved.

Mode Simulation for Midinfrared Microsquare Resonators With Sloped Sidewalls and Confined Metals

EQUILATERAL-TRIANGLE; MU-M; LASERS; MICROLASERS; MICRODISK Abstract: Mode characteristics for midinfrared microsquare resonators with sloped sidewalls and confined metal layers are investigated by finite-difference time-domain (FDTD) techniques. For a microsquare with a side length of 10 mu m, the mode quality (Q)-factors of 8329, 4772, and 2053 are obtained for TM5,7 mode at wavelength 7.1 mu m by three-dimensional FDTD simulations, as the tilting angles of the side walls are 90 degrees, 88 degrees, and 86 degrees, respectively. Furthermore, microsquare resonators laterally surrounded by SiO2 and metal layers are investigated by the two-dimensional FDTD technique for the metal layers of Au, Ti-Au, Ag-Au, and Ti-Ag-Au, respectively.

Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2

InGaN/GaN multi-quantum-well blue (461 +/- 4 nm) light emitting diodes with higher electroluminescence intensity are obtained by postgrowth thermal annealing at 720 C in O-2-ambient. Based on our first-principle total-energy calculations, we conclude that besides dissociating the Mg-H complex by forming H2O, annealing in O-2 has another positive effect on the activation of acceptor Mg in GaN. Mg can be further activated by the formation of an impurity band above the valence band maximum of host GaN from the passivated Mg-Ga-O-N complex. Our calculated ionization energy for acceptor Mg in the passivated system is about 30 meV shallower than that in pure GaN, in good agreement with previous experimental measurement. Our model can explain that the enhanced electroluminescence intensity of InGaN/GaN MQWs based on Mg-doped p-type GaN is due to a decrease in the ionization energy of Mg acceptor with the presence of oxygen. (C) 2008 American Institute of Physics.

Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mu m were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 +/- 47 and 201 +/- 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 +/- 0.88 and 3.16 +/- 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.

Development of Swept Frequency Method for Measuring Frequency Response of Photodetectors Based on Harmonic Analysis

We develop a swept frequency method for measuring the frequency response of photodetectors; (PDs) based on harmonic analysis. In this technique, a lightwave from a laser source is modulated by a radio-frequency (RF) signal via a Mach-Zehnder LiNbO3 modulator, and detected by a PD under test. The measured second-order harmonic of the RF signal contains information of the frequency responses and nonlinearities of the RF source, modulator, and PD. The frequency response of the PD alone is obtained by deducting the known frequency responses and nonlinearities of the RF source and modulator. Compared with the conventional swept frequency method, the measurement frequency range can be doubled using the proposed method. Experiment results show a good agreement between the measured results and those obtained using other techniques.

Theoretical investigation of intersubband transition in AlxGa1-xN/GaN/AlyGa1-yN step quantum well

A modified self-consistent method is introduced for the design of AlxGa1-xN/GaN step quantum well (SQW) with the position and energy-dependent effective mass. The effects of nonparabolicity are included. It is shown that the nonparabolicity effect is minute for the lowest subband energy level and grows in size for the higher subband states. The effects of nonparabolicity have significant influence on the transition energies and the oscillator strengths and should be taken into account in the investigation of the optical transitions. The strong asymmetric property introduced by the step quantum well magnifies the weak intersubband transition from the ground state to the third state (1 -> 3). It is shown that in an appropriate scope, the intersubband transition (1 -> 3) has the comparable oscillator strength with transition from the ground state to the second one (1 -> 2), which suggests the possible application of the two-color photodetectors. The results of this work should provide useful guidance for the design of optically pumped asymmetric quantum well lasers and quantum well infrared photodetectors (QWIPs). (c) 2005 Elsevier B.V. All rights reserved.

A time-varying controllable fault-tolerant field associative memory model and its simulation

A time-varying controllable fault-tolerant field associative memory model and the realization algorithms are proposed. On the one hand, this model simulates the time-dependent changeability character of the fault-tolerant field of human brain's associative memory. On the other hand, fault-tolerant fields of the memory samples of the model can be controlled, and we can design proper fault-tolerant fields for memory samples at different time according to the essentiality of memory samples. Moreover, the model has realized the nonlinear association of infinite value pattern from n dimension space to m dimension space. And the fault-tolerant fields of the memory samples are full of the whole real space R-n. The simulation shows that the model has the above characters and the speed of associative memory about the model is faster.

Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

As reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH3) flow rate in gas source-Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH3 can affect Si growth rate? Up to now, the quantitative characterization of PH3 flow influence on Si growth rate is little known. In this letter, the PH, influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect. (C) 2000 Elsevier Science B.V. All rights reserved.

Outer space grown semi-insulating GaAs and its applications

GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaAs shows semi-insulating behavior. The structural properties of the crystal have been improved obviously, and their uniformity has been improved as well. The stoichiometry and its distribution in space-grown GaAs are improved greatly compared with the GaAs single crystal grown terrestrially. The properties of integrated circuits made by direct ion-implantation on space-grown GaAs are better than those made on ground-grown materials. These results show that the stoichiometry in semi-insulating GaAs seriously affects the properties of related devices.

The design and verification of FPGA CAD toolset

This paper introduces a complete CAD toolset for the implementation of digital logic in a Field-Programmable Gate Array (FPGA) platform. Compared with existing academic toolsets, this toolset introduces formal verification in each step of the tool flow, especially the formal verification of the configuration bitstream. The FPGA CAD tool verification flow using Formality is presented in detail. Using plug-in technology, we have developed an integrated FPGA design kit to incorporate all tools together.

基于安全状态域的网络评估模型

将基于攻击图的评估与依赖标准的评估相结合,提出了一种基于安全状态域(security state region,简称SSR)的网络安全评估模型(security-state-region-based evaluation model,简称SSREM).该模型将攻击的影响分为攻击能力改变和环境改变,通过两者之间的因果关系建立数学模型,提出了安全状态域趋向指数的概念,借助Matlab进行攻击趋势的曲面拟合,进而进行安全状态域的划分和网络的安全性评估.实验结果表明,依据SSREM进行的评估能够通过安全状态城和安全状态域趋向指数反映网络进入不同状态的难易程度,对网络安全性量化评估具有借鉴意义.

structuring and manipulating hand-drawn concept maps

Concept maps are an important tool to knowledge organization,representation, and sharing. Most current concept map tools do not provide full support for hand-drawn concept map creation and manipulation, largely due to the lack of methods to recognize hand-drawn concept maps. This paper proposes a structure recognition method. Our algorithm can extract node blocks and link blocks of a hand-drawn concept map by combining dynamic programming and graph partitioning and then build a concept-map structure by relating extracted nodes and links. We also introduce structure-based intelligent manipulation technique of hand-drawn concept maps. Evaluation shows that our method has high structure recognition accuracy in real time, and the intelligent manipulation technique is efficient and effective.