Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 muJ 52 ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEM00-mode.

High Q-factor TM modes in three-dimensional semiconductor microresonators

We have investigated the mode characteristics for three-dimensional (3D) semiconductor microresonators by finite-difference time-domain (FDTD) technique. The results show that the quality-factors (Q-factors) of TM-like modes are much larger than those of TE-like modes as the vertical waveguidng formed by semiconductor materials.

High Q microring resonator in silicon-on-insulator rib waveguides - art. no. 68380J

A high quality (Q) factor microring resonator in silicon-on-insulator rib waveguides was fabricated by electron beam lithography, followed by inductively coupled plasma etching. The waveguide dimensions were scaled down to submicron, for a low bending loss and compactness. Experimentally, the resonator has been realized with a quality factor as high as 21,200, as well as a large extinction ratio 12.5dB at telecommunication wavelength near 1550nm. From the measured results, propagation loss in the rib waveguide is determined as low as 6.900/cm. This high Q microring resonator is expected to lead to high speed optical modulators and bio-sensing devices.

High-Q and High-extinction-ratio Microdisk Add-drop Filter with Grating Couplers in Silicon-on-Insulator

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:08:51Z No. of bitstreams: 1 High-Q and High-extinction-ratio Microdisk Add-drop Filter with Grating Couplers in Silicon-on-Insulator.pdf: 662474 bytes, checksum: dbdd3fba410c875bd74a6d4823930a44 (MD5)

LD side-pumped high beam quality passive Q-switched and mode-locked Nd:YAG laser based on SESAM

We report a LD side-pumped fundamental-mode (Mx(2) = 1.35 and My(2) = 1.27) passive Q-switched and mode-locked Nd:YAG laser based on a semiconductor saturable absorber mirror (SESAM). At a pump current of 12.5 A, the average output power of 5.68 W with 80 kHz repetition rate and 2 mu s pulse width of the Q-switched envelope was generated. The repetition rate of the mode-locked pulse within the Q-switched envelope of 88 MHz was achieved.

Q的线性密码分析

对NESSIE公布的17个分组密码之一的Q进行了线性密码分析，攻击所需的数据复杂不大于2^118(相应的成功率为0．785），空间复杂度不大于2^33+2^19+2^18+2^12+2^11+2^10。此结果显示Q对线性密码分析是不免疫的。

OnceAS/Q:一个面向QoS的Web应用服务器

网络分布计算环境下应用系统的需求多样化和复杂性的增长,要求位于中间件层次的Web应用服务器(web application server,简称WAS)从原来的尽力而为服务模型转变为服务质量(quality of service,简称QoS)保障模型,为具有不同需求的应用分别提供适宜的服务质量保障.目前的WAS系统在此方面仍然比较薄弱.OnceAS/Q是一个面向QoS的WAS系统,它以QoS规约为基础,为不同应用提供不同的QoS保障能力.OnceAS/Q实现了一个应用QoS保障框架,提供了一组QoS服务组件支持具有QoS需求的应用开发和运行.介绍了OnceAS/Q的体系结构和主要组件,详细阐述了两个关键问题,一是QoS规约的定义及其映射,另一个是面向QoS的服务组件和资源的动态重配.OnceAS/Q原型在Ecperf测试基准下,对其QoS保障能力进行了实验.实验数据表明,在较大规模的应用环境下,OnceAS/Q能够提供更好的服务质量,并且开销是可接受的.

On-Chip All-Optical Passive 3.55 Gbit/s NRZ-to-PRZ Format Conversion Using a High-Q Silicon-Based Microring Resonator

We report the experimental result of all-optical passive 3.55 Gbit/s non-return-to-zero (NRZ) to pseudo-return-to-zero (PRZ) format conversion using a high-quality-factor (Q-factor) silicon-based microring resonator notch filter on chip. The silicon-based microring resonator has 23800 Q-factor and 22 dB extinction ratio (ER), and the PRZ signals has about 108 ps width and 4.98 dB ER.

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.

Efficient Mode-locked and Q-switched Nd∶YVO_4 Laser with Semiconductor Saturable Absorber Mirror

We reported an efficient diode pumped Nd ! YVO, 1 064 nm laser passively mode-locked and Q-switched by a semiconductor saturable absorber mirror(SESAM). At the incident pump power of 7. 5 W, 2. 81 W average output power was obtained during stable CW mode locking with a repetition rate of 111 MHz. The optical conversion efficiency was 37. 5% , and the slope efficiency was 39%. So far as we know, this is the highest optical-optical conversion efficiency with a SESAM at home.