Thermal stress-induced birefringence in borate glass irradiated by femtosecond laser pulses

Thermal stress-induced birefringence in borate glass which has been irradiated by 800-nm femtosecond laser pulses is observed under cross-polarized light. Due to the high temperature and pressure formed in the focal volume, the material at the edge of the micro-modified region is compressed between the expanding region and the unheated one, then stress emerges. Raman spectroscopy is used to investigate the stress distribution in the micro-modified region and indicates the redistributions of density and refractive index by Raman peak shift. We suggest that this technique can develop waveguide polarizers and Fresnel zone plates in integrated optics.

Study of crystal formation in titanate glass irradiated by 800 nm femtosecond laser pulse

The structure of the titanate glass is destroyed during irradiation by the femtosecond laser pulses, and (TiO6)(8-) and (TiO4)(4-) anion units are exsolved from the network of the titanate glass. These anion units are rearranged to form some crystals such as anatase and Ba2TiO4 crystals. By Raman spectroscopy, it is found that these crystals have a strong dependence on the intensity of the femtosecond laser pulses. The relation between the generation of these crystals and space distribution of the femtosecond laser power intensity is qualitatively explained. (c) 2005 Elsevier B.V. All rights reserved.

Effects of annealing on laser-induced damage threshold of TiO2/SiO2 high reflectors

The mechanism of improving 1064 nm, 12 ns laser-induced damage threshold (LIDT) of TiO2/SiO2 high reflectors (HR) prepared by electronic beam evaporation from 5.1 to 13.1 J/cm(2) by thermal annealing is discussed. Through optical properties, structure and chemical composition analysis, it is found that the reduced atomic non-stoichiometric defects are the main reason of absorption decrease and LIDT rise after annealing. A remarkable increase of LIDT is found at 300 degrees C annealing. The refractive index and film inhomogeneity rise, physical thickness decrease, and film stress changes from compress stress to tensile stress due to the structure change during annealing. (c) 2007 Elsevier B.V. All rights reserved.

Investigation of damage threshold to TiO2 coatings at different laser wavelength and pulse duration

Laser-induced damages to TiO2 single layers and TiO2/SiO2 high reflectors at laser wavelength of 1064 nm, 800 run, 532 urn, and pulse width of 12 ns, 220 ps, 50 fs, 8 ns are investigated. All films are prepared by electron beam evaporation. The relations among microstructure, chemical composition, optical properties and laser-induced damage threshold (LIDT), have been researched. The dependence of damage mechanism on laser wavelength and pulse width is discussed. It is found that from 1064 nm to 532 nm, LIDT is mainly absorption related, which is determined by film's extinction coefficient and stoichiometric defects. The rapid decrease of LIDT at 800 nm is due to the pulse width factor. TiO2 coatings are mainly thermally by damaged at long pulse (tau >= 220 ps). The damage shows ablation feature at 50 fs. (C) 2007 Elsevier B.V. All rights reserved.

High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films

Ta2O5 films were deposited by conventional electron beam evaporation method and then annealed in air at different temperature from 873 to 1273 K. It was found that the film structure changed from amorphous phase to hexagonal phase when annealed at 1073 K, then transformed to orthorhombic phase after annealed at 1273 K. The transmittance was improved after annealed at 873 K, and it decreased as the annealing temperature increased further. The total integrated scattering (TIS) tests and AFM results showed that both scattering and root mean square (RMS) roughness of films increased with the annealing temperature increasing. X-ray photoelectron spectroscopy (XPS) analysis showed that the film obtained better stoichiometry and the O/Ta ratio increased to 2.50 after annealing. It was found that the laser-induced damage threshold (LIDT) increased to the maximum when annealed at 873 K, while it decreased when the annealing temperature increased further. Detailed damaged models dominated by different parameters during annealing were discussed. (C) 2008 Elsevier B. V. All rights reserved.

Laser induced damage threshold at 355 and 1064 nm of Ta2O5 films of different phases

Ta2O5 films are deposited on fused silica substrates by conventional electron beam evaporation method. By annealing at different temperatures, Ta2O5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer ( XRD) results. X-ray photoelectron spectroscopy ( XPS) analysis shows that chemical composition of all the films is stoichiometry. It is found that the amorphous Ta2O5 film achieves the highest laser induced damage threshold ( LIDT) either at 355 or 1064 nm, followed by hexagonal phase and finally orthorhombic phase. The damage morphologies at 355 and 1064 nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. The decrease of the LIDT at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.

Investigation of annealing effects on the laser-induced damage threshold of amorphous Ta2O5 films

Ta2O5 films were deposited using the conventional electron beam evaporation method and then annealed at temperatures in the range 373-673 K. Chemical composition, scattering and absorption were examined by X-ray photoelectron spectroscopy (XPS), total integrated scattering (TIS) measurement and the surface thermal lensing (m) technique, respectively. The laser-induced damage threshold (LIDT) was assessed using the output from an Nd:YAG laser with a pulse length of 12 ns. The results showed that the improvement of the LIDT after annealing was due to the reduced substoichiometric and structural defects present in the film. The LIDT increased slightly below 573K and then increased significantly with increase in annealing temperature, which could be attributed to different dominant defects. Moreover, the root mean square (RMS) roughness and scattering had little effect on the LIDT, while the absorption and the LIDT were in accord with a general relation. (c) 2008 Elsevier Ltd. All rights reserved.

Fluorescence cross-correlation spectroscopy to study hemodynamics

[EN] In the recent years a series of optical correlation techniques have been developed in order to be able to measure flow velocity with high spatial resolution while being non-invasive in order to be employed in-vivo on biological organisms. The technique employed in my thesis work, scanning laser image correlation (SLIC), is a powerful approach for the detection of flow motions because it overcomes some limitations of the classical spectroscopy techniques. SLIC method consists in repeated laser scans over a linear pattern and on the cross correlation of the signal emitted by the excited fluorophores in different positions along the scan line. Therefore, the resulting measurements for flow velocity are really accurate.

74-fs nanotube-mode-locked fiber laser

We report an erbium-doped, nanotube mode-locked fiber oscillator generating 74 fs pulses with 63 nm spectral width. This all-fiber-based laser is a simple, low-cost source for time-resolved optical spectroscopy, as well as for many applications where high resolution driven by short pulse durations is required. © 2012 American Institute of Physics.

Femtosecond laser induced breakdown for combustion diagnostics

The focused beam of a 100 fs, 800 nm laser is used to induce a spark in some laminar premixed air-methane flames operating with variable fuel content (equivalence ratio). The analysis of the light escaping from the plasma revealed that the Balmer hydrogen lines, H α and H β, and some molecular origin emissions were the most prominent spectral features, while the CN (B 2Σ +-X 2Σ +) band intensity was found to depend linearly with methane content, suggesting that femtosecond laser induced breakdown spectroscopy can be a useful tool for the in-situ determination and local mapping of fuel content in hydrocarbon-air combustible mixtures. © 2012 American Institute of Physics.

Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure

The vertical-cavity surface-emitting laser(VCSEL) has proved to be a low cost light source with attractive properties such as surface emission, circular and low divergence output beam, and simple integration in two-dimensional array. Many new applications such as in spectroscopy, optical storage, short distance fiber optic interconnects, and in longer distance communication, are continuously arising. Many of these applications require stable and single-mode high output power. Several methods that affect the transverse guiding and/or introduce mode selective loss or gain have been developed. In this study, a method for improving the single mode output power by using metal surface plasmons nanostructure is proposed. Theoretical calculation shows that the outpout power is improved about 50% compared to the result of standard VCSELs.

Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics

Nanocrystalline silicon (nc-Si) films were prepared by pulsed laser annealed crystallization of amorphous silicon (alpha-Si) films on SiO2-coated quartz or glass substrates. The effect of laser energy density on structural characteristics of nc-Si films was investigated. The Ni-induced crystallization of the a-Si films was also discussed. The surface morphology and microstructure of these films were characterized by scanning electron microscopy, high-resolution electron microscopy, atomic force microscopy and Raman scattering spectroscopy. The results show that not only can the alpha-Si films be crystallized by the laser annealing technique, but also the size of Si nanocrystallites can be controlled by varying the laser energy density. Their average size is about 4-6 nm. We present a surface tension and interface strain model used for describing the laser annealed crystallization of the alpha-Si films. The doping of Ni atoms may effectively reduce the threshold value of laser energy density to crystallize the alpha-Si films, and the flocculent-like Si nanostructures could be formed by Ni-induced crystallization of the alpha-Si films.

Study on the thermal stability of InN by in-situ laser reflectance system

The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was systematically investigated in situ by laser reflectance system and ex situ by morphology characterization, X-ray diffraction and X-ray photoelectron spectroscopy. It was found that InN can withstand isothermal annealing at temperature as high as 600 degrees C in NH3 ambient. While in N-2 atmosphere, it will decompose quickly to form In-droplets at least at the temperature around 500 degrees C, and the activation energy of InN decomposition was estimated to be 2.1 +/- 0.1 eV. Thermal stability of InN when annealing in NH3 ambient during temperature altering would be very sensitive to ramping rate and NH3 flow rate, and InN would sustain annealing process at small ramping rate and sufficient supply of reactive nitrogen radicals. Whereas In-droplets formation was found to be the most frequently encountered phenomenon concerning InN decomposition, annealing window for conditions free of In-droplets was worked out and possible reasons related are discussed. In addition, InN will decompose in a uniform way in the annealing window, and the decomposition rate was found to be in the range of 50 and 100 nm/h. Hall measurement shows that annealing treatment in such window will improve the electrical properties of InN. (c) 2005 Elsevier B.V. All rights reserved.

Design and characteristics of quantum cascade laser-based CO detection system

National High Technology Research and Development Program of China 2007AA03Z112；Program of Ministry of Education of China 20060183030；Program of Jilin Provincial Science and Technology Department of China 20070709；Program of Bureau of Science and Technology of Changchun City 2007107

Impact of diode facet reflectivity on the fiber grating external cavity semiconductor laser

The scattering matrix method is used to analyze the multiple reflection effect between the laser diode facet and the fiber grating facet by considering the fiber grating external cavity laser diode (FGECL) as a four-mirror cavity laser. When neglecting other important parameters such as butt-coupling distance between the diode and the fiber facets, coupling efficiency, external cavity length, it is shown that low reflectivity is not a crucial factor for the laser characteristics such as SMSR. Experimentally high SMSR fiber grating external cavity laser is fabricated with a relatively large residual facet reflectivity (about 1%), which is coincident with our simulation results.