Protein-Ion Binding Process on Finite Macromolecular Concentration. A Poisson-Boltzmann and Monte Carlo Study

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Study on the K3Li2Nb5O15 formation during the production of (Na0.5K0.5)((1-x))LixNbO3 lead-free piezoceramics at the morphotropic phase boundary

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of the excess of bismuth on the morphology and properties of the BaBi2Nb2O9 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dielectric properties of Ca(Zr0.05Ti0.95)O-3 thin films prepared by chemical solution deposition

Ca(Zr0.05Ti0.95)O-3 (CZT) thin films were grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by the soft chemical method. The films were deposited from spin-coating technique and annealed at 928 K for 4 h under oxygen atmosphere. CZT films present orthorhombic structure with a crack free and granular microstructure. Atomic force microscopy and field-emission scanning electron microscopy showed that CZT present grains with about 47 nm and thickness about 450 nm. Dielectric constant and dielectric loss of the films was approximately 210 at 100 kHz and 0.032 at 1 MHz. The Au/CZT/Pt capacitor shows a hysteresis loop with remnant polarization of 2.5 mu C/cm(2), and coercive field of 18 kV/cm, at an applied voltage of 6 V. The leakage current density was about 4.6 x 10(-8) A/cm(2) at 3 V. Dielectric constant-voltage curve is located at zero bias field suggesting the absence of internal electric fields. (c) 2006 Elsevier B.V. All rights reserved.

Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method

Ferroelectric SrBi4Ti4O15 thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. Atomic force microscopy (AFM) analyses showed that the surface of these films is smooth, dense and crack-free with low surface roughness (6.4 nm). At room temperature and at a frequency of 1 MHz, the dielectric constant and the dissipation factor were, respectively, 150 and 0.022. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behaviour. The remanent polarization and coercive field for the films deposited were 5.4 mu C/cm(2) and 8 5 kV/cm, respectively. All the capacitors showed good polarization fatigue characteristics at least up to 1 x 10(10) bipolar pulse cycles indicating that SrBi4Ti4O15 thin films can be a promising material for use in nonvolatile memories. (c) 2005 Elsevier B.V. All rights reserved.

Ferroelectric and dielectric properties of Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 thin films grown by the soft chemical method

Polycrystalline Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin films showed a dense structure with uniform grain size distribution. The dielectric constant of the films estimated from C-V curve is around 1134 and can be ascribed to a reduction in the oxygen vacancy concentration. The ferroelectric nature of the film indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed remnant polarization of 14 mu C/cm(2) and coercive field of 74 kV/cm at frequency of 1 MHz. At the same frequency, the leakage current density at 1.0 V is equal to 1.5 x 10(-7) A/cm(2). This work clearly reveals the highly promising potential of BST:Sn for application in memory devices. (c) 2006 Elsevier B.V. All rights reserved.

Ferroelectric and dielectric behaviour of Bi0.92La0.08FeO3 multiferroic thin films prepared by soft chemistry route

Bi0.92La0.08FeO3 (BLFO) thin films were grown on platine substrates by the soft chemical route. Ferroelectric and dielectric behaviors of BLFO films deposited by spin-coating technique and annealed at 773 K for 2 h in air atmosphere were explained. BLFO thin films obtained presents a rhombohedral structure. The BLFO films present dielectric and ferroelectric behaviors with dielectric permittivity and dielectric loss of approximately 81 and 0.0144 at 1 kHz. The Au/BLFO/Pt capacitor shows a hysteresis loop with remnant polarization of 20.6 mu C/cm(2) and coercive field of 53.88 kV/cm. The polarization switching and the fatigue behavior of the BLFO films were significantly enhanced.

Influence of thickness on crystallization and properties of LiNbO3 thin films

Thin films of lithium niobate were deposited on Pt/Ti/SiO2 (111) substrates by spin coating from the polymeric precursor method (Pechini process). Annealing in static air was performed at 500 degreesC for 3 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy. The dielectric constant, dissipation factor and resistance were measured in frequency region from 10 Hz to 10 MHz and the hysteresis loop was obtained. The influence of number of layers on crystallization, morphology and properties of LiNbO3 thin films is discussed. (C) 2003 Elsevier B.V. All rights reserved.

Influence of oxygen atmosphere on crystallization and properties of LiNbO3 thin films

Thin films of lithium niobate were deposited on the Pt/Ti/SiO2 (111) substrates by spin coating from the polymeric precursor method (Pechini process). Annealing in static air and oxygen atmosphere was performed at 500 degreesC for 3 h. The films obtained were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The dielectric constant and dissipation factor were measured in frequency region from 10 Hz to 10 MHz. Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. The influence of oxygen atmosphere on crystallization, morphology and properties of LiNbO3 thin films is discussed. (C) 2003 Elsevier Ltd. All rights reserved.

Ferroelectric and dielectric properties of vanadium-doped Ba(Ti0.90Zr0.10)O-3 ceramics

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Improvement of fatigue resistance on La modified BiFeO(3) thin films

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Dielectric investigations of vanadium modified barium zirconium titanate ceramics obtained from mixed oxide method

Vanadium modified barium zirconium titanate ceramics Ba(Zr(0.10)Ti(0.90))O(3):2V (BZT:2V) were prepared from the mixed oxide method. According to X-ray diffraction analysis, addition of vanadium leads to ceramics free of secondary phases. Electrical characteristics reveal a dielectric permittivity at around 15,000 with low dielectric loss with a remnant polarization (P(r))of 8 mu C/cm(2) at 2 kV/cm. From the obtained results, we assume that vanadium substitution in the BZT lattice affects dielectric characteristics due to the electron-relaxation-mode in which carriers (polarons, protons, and so on) are coupled with existing dielectric modes. (C) 2009 Published by Elsevier B.V.

Structure and ferro/piezoelectric properties of SrBi(4)Ti(4)O(15) films deposited on TiO(2) buffer layer

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dielectric Spectroscopy Analyses of SrBi4Ti4O15 Films Obtained from Soft Chemical Solution

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)