Improvement of fatigue resistance on La modified BiFeO(3) thin films


Autoria(s): Simões, Alexandre Zirpoli; Cavalcante, L. S.; Riccardi, C. S.; Varela, José Arana; Longo, Elson
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/03/2009

Resumo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

The effect of lanthanum (La) addition in BiFeO(3) (BFO) thin films deposited on Pt(111)/Ti/SiO(2)/Si(100) substrates prepared by soft chemical method was explained. Increasing La concentration promotes changes on structure, microstructure and dielectric/ferroelectric response of films. X-ray diffraction reveals that the films are free of preferred orientations and structural distortion. La addition promotes an increase in dielectric permittivity. The polarization switching and the fatigue behavior of the BFO films were significantly enhanced by the La concentration. (C) 2008 Elsevier B.V. All rights reserved.

Formato

520-523

Identificador

http://dx.doi.org/10.1016/j.cap.2008.05.001

Current Applied Physics. Amsterdam: Elsevier B.V., v. 9, n. 2, p. 520-523, 2009.

1567-1739

http://hdl.handle.net/11449/25572

10.1016/j.cap.2008.05.001

WOS:000261360300041

Idioma(s)

eng

Publicador

Elsevier B.V.

Relação

Current Applied Physics

Direitos

closedAccess

Palavras-Chave #Fatigue resistance #BiFeO(3) #Ferroelectric #Multiferroic
Tipo

info:eu-repo/semantics/article