Influence of the rapid thermal annealing on the properties of thin a-Si films

The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200degreesC for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.

Outer space grown semi-insulating GaAs and its applications

GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaAs shows semi-insulating behavior. The structural properties of the crystal have been improved obviously, and their uniformity has been improved as well. The stoichiometry and its distribution in space-grown GaAs are improved greatly compared with the GaAs single crystal grown terrestrially. The properties of integrated circuits made by direct ion-implantation on space-grown GaAs are better than those made on ground-grown materials. These results show that the stoichiometry in semi-insulating GaAs seriously affects the properties of related devices.

小麦氮磷肥长期配施对土壤硝态氮淋溶的影响

利用长期肥料定位试验,监测旱地农田土壤硝态氮的淋溶动向,研究施肥量与硝态氮累积量之间的关系,为科学施肥提供参考。【方法】在试验小区0～300cm土壤剖面中,每20cm深度取一个土样,1mol·L-1KCl浸提后以AA3连续流动分析仪测定硝态氮含量。【结果】单施氮肥土壤硝态氮累积峰出现在80～100cm土层和300cm以下土层,当施氮量达到180kg·hm-2·a-1时,0～300cm土层硝态氮累积总量相当于8年的施氮量。单施磷肥对土壤硝态氮分布无影响;氮、磷肥配施时,施氮量增加硝态氮累积量显著增加,配施磷肥后可以减少硝态氮累积量,且施氮量越大减少的越多。过量施用氮肥,即使配施磷肥,硝态氮也能发生淋溶并在100～120cm和240～260cm土层附近累积;二次多项式回归能够较好地反映氮、磷施用量与土壤硝态氮累积量之间的关系。【结论】长期过量施用氮肥,导致硝态氮大量淋溶并形成两个累积峰,科学合理地配施磷肥可以减少硝态氮淋失;旱地麦田长期施用最大产量施肥量,可能导致硝态氮大量累积在土壤深层。

Electro-luminescence and photo-luminescence from strained SiGe/Si quantum well

Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed.

Offset quantum-well method for tunable distributed Bragg reflector lasers and electro-absorption modulated distributed feedback lasers

A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well inethod. The distributed Bragg reflector （DBR） was realized just by selectively wet etching the multiquantum-well （MQW） layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback （DFB） laser was integrated with an electro-absorption modulator （EAM）, which was capable of producing 20 dB of optical extinction.

Design and numerical analysis for low birefringence silica on silicon waveguides

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.

用MBE在非平面衬底上生长的掩埋脊形多量子线列阵

国家自然科学基金