Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions

We reported the all electronic demonstration of spin injection and detection in the trilayers with hybrid structure of CoFeB/GaAs/(Ga,Mn)As (metal/insulator semiconductor) by probing the magnetoresistance at low temperature from 1.8 to 30 K. Tunneling magnetoresistance (TMR) ratios of 3.8%, 4.7%, 2.9%, and 1.4% at 1.8, 10, 20, and 30 K, respectively, were observed. Bias dependence of both the junction resistance and TMR ratio was studied systematically. V-half at which TMR drops to half of its maximum is 6.3 mV, being much smaller compared to that observed in (Ga,Mn)As/ZnSe/Fe and (Ga,Mn)As/AlAs/MnAs hybrid structures, indicating lower Fermi energy of (Ga,Mn)As.

Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency

Tunnel-regenerated multiple-active-region (TRMAR) light-emitting diodes (LEDs) with high quantum efficiency and high brightness have been proposed and fabricated. We have proved experimentally that the efficiency of the electrical luminescence and the on-axis luminous intensity of such TRMAR LEDs scaled linearly approximately with the number of the active regions. The on-axis luminous intensity of such TRMAR LEDs with only 3 mum GaP current spreading layer have exceeded 5 cd at 20 mA dc operation under 15 degrees package. The high-quantum-efficiency and high-brightness LEDs under the low injection level were realized. (C) 2001 American Institute of Physics.

Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction

A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. In this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. This structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. Low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of Si:GaAs/C:GaAs tunnel junctions, GaAs/InGaAs strain quantum well active regions. External differential quantum efficiency as high as 2.2 and light power output of 2.5 W per facet (under 2A drive current) are achieved from an uncoated novel laser device with three active regions.

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

Boron-doped hydrogenated silicon films with different gaseous doping ratios (B_2H_6/SiH_4) were deposited in a plasma-enhanced chemical vapor deposition (PECVD) system. The microstructure of the films was investigated by atomic force microscopy (AFM) and Raman scattering spectroscopy. The electrical properties of the films were characterized by their room temperature electrical conductivity (σ) and the activation energy (E_a). The results show that with an increasing gaseous doping ratio, the silicon films transfer from a microcrystalline to an amorphous phase, and corresponding changes in the electrical properties were observed. The thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions. The measurements of the Ⅰ-Ⅴ characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04, and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it. The junction with such a recombination layer has a small resistance, a nearly ohmic contact, and a negligible optical absorption.

Tunnel Junction AlGaInP Light Emitting Diode

The n-type GaAs substrates are used and their conductive type is changed to p-type by tunnel junction for AlGaInP light emitting diodes (TJ-LED), then n-type GaP layer is used as current spreading layer. Because resistivity of the n-type GaP is lower than that of p-type, the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n-type GaP current spreading layer. For TJ-LED with 3μm n-type GaP current spreading layer, experimental results show that compared with conventional LED with p-type GaP current spreading layer, light output power is increased for 50% at 20mA and for 66.7% at 100mA.

High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers

We fabricate 1.5 mu m InGaAsP/InP tunnel injection multiple-quantum-well (TI-MQW) Fabry-Perot (F-P) ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (MOCVD). Characteristic temperature.. 0 of 160K at 20 degrees C is obtained for 500-mu m-long lasers. T-0 is measured as high as 88K in the temperature range of 15-75 degrees C. Cavity length dependence of T-0 is investigated.

All-organic tunnel junctions as connecting units in tandem organic solar cell

We employed organic heterojunction films as all-organic connecting units to fabricate tandem organic photovoltaic cells by continuous deposition. The all-organic connecting units with a better transparence and a lower sublimation temperature became an effective recombination center for electrons and holes photogenerated in front cell and back cell, respectively. Tunnel mechanism was proposed to explain the combination of photogenerated carrier.

Molecular sensing with the tunnel junction of an Au nanogap in solution

The tunnel junction of a gold nanogap was fabricated electrochemically for a molecular sensing device in solution. The tunnel junction was sensitive enough to detect the variation of a potential barrier within the nanogap, such as the chemical adsorption of molecules. By monitoring the variation of the tunneling current, which represents the change of a potential barrier due to molecular adsorption, the molecules could be detected.

Hydrothermal synthesis and crystal structure of a layered inner-tunnel compound [(CuI)(2)(o-phen)(2)]

A layered inner-tunnel supramolecular compound 1, [(CuI)(2)(o-phen)(2)], was hydrothermally synthesized and structurally characterized by X-ray crystal diffraction. It crystallizes in triclinic system, space group P (1) over bar with a=0.7759(2) nm, b=0.9070(2) rim, c=0.91894(10) rim, alpha=96.306(14)degrees, beta=104.567(16)degrees, gamma=109.421(19)degrees, V=0.5768(2) nm(3), Z=1, R=0.0348, omegaR=0.0920.

A chromic molybdenum phosphate with a tunnel structure: hydrothermal synthesis and structure of (NH3CH2CH2NH3)(2) center dot (NH3CH2CH2NH2)(3)center dot[NaCr2Mo12O30(PO4)(HPO4)(4)(H2PO4)(3)]center dot 6H(2)O

A chromic molybdenum phosphate, (NH3CH2CH2NH3)(2).(NH3CH2CH2NH2)(3).[NaCr2Mo12O30(PO4)(HPO4)(3)]. 6H(2)O, involving molybdenum present in V oxidation, has been hydrothermally synthesized and structurally characterized by single crystal X-ray diffraction and IR spectrum. Deep brown-red crystals are formed in the triclinic system, space group P (1) over bar, a = 12.067(2), b = 14.677(3), c = 21.290(2) Angstrom, alpha = 80.940(10)degrees, beta = 82.960(10)degrees, gamma = 76.61(2)degrees. The structure of the title compound may be considered to be two [Mo6O15(HPO4)(H2PO4)(3)](5-) units bonded to a chromic atom, although several P-O groups are not protonated on account of coordination with a Na+ cation. The one-dimensional tunnels were formed in the solid of the title compound. (C) 2000 Elsevier Science B.V. All rights reserved.

A manganese molybdenum phosphate with a tunnel: hydrothermal synthesis, structure and catalytic properties of (NH3CH2CH2NH3)(10-)H3O)(3)(H5O2)Na-2[MnMo12O24(OH)(6)(PO4)(4)(PO3OH)(4)]-[MnMo12O24(OH)(6)(PO4)(6)(PO3OH)(2)] center dot 9H(2)O

A manganese molybdenum phosphate, (NH3CH2CH2NH3)(10)(H3O)(3)(H5O)Na-2[MnMo12O24(OH)(6) (PO4)(4)(PO3OH)(4)][MnMo12O24 (OH)(6)(PO4)(6)(PO3OH)(2)]. 9H(2)O, has been hydrothermally synthesized and structurally characterized by single crystal X-ray diffraction. The structure of this compound may be considered to be two [Mo6O12(OH)(3)(PO4)(2)(HPO4)(2)](7-) units bonded together by a manganese atom, although several P-O groups are not protonated on account of coordination to a Na+ cation. One-dimensional tunnels were formed in the solid. A probe reaction of the oxidation of acetaldehyde with H2O2 using this compound as catalyst was carried out in a liquid-solid system, showing that the manganese molybdenum phosphate has high catalytic activity in the reaction.