Expression on human thymocytes of the idiotypic structures (Ti) from two leukemia T cell lines Jurkat and HPB-ALL.

The expression on a significant number of thymocytes of idiotypic structures (Ti) restricted to HPB-ALL or Jurkat cells is demonstrated. As many as 2-4% of thymocytes were stained with anti-Ti HPB-ALL or anti-Ti Jurkat monoclonal antibodies, when analyzed by flow microfluorometry. Immunohistochemical localization studies performed on frozen thymus specimens of either fetal or pediatric origin indicated a scattered distribution of Ti-positive cells in both the cortex and the medulla. From lysates of 125I-labeled pediatric thymocytes, anti-Ti HPB-ALL and anti-Ti Jurkat monoclonal antibodies precipitated disulfide-linked heterodimers comparable to those precipitated from 125I-labeled HPB-ALL or Jurkat cells as shown by sodium dodecyl sulfate-polyacrylamide gel electrophoresis analysis.

Impacto de las inversiones en TI en la eficiencia de los bancos argentinos

Las tecnologías de información (TI) constituyen en la actualidad una herramienta fundamental para el logro de ventajas competitivas en un contexto sumamente cambiante. Resulta relevante conocer el impacto de su utilización sobre el desempeño de las organizaciones, en particular en sectores como el bancario, que realizan un uso intensivo de información. En el presente trabajo se desarrolla un modelo que posibilita evaluar el impacto de las inversiones en TI sobre la eficiencia de las entidades bancarias. Se utilizó la técnica Data Envelopment Analysis (DEA) como herramienta de medición de la eficiencia de acuerdo al modelo elaborado sobre la información obtenida de los estados contables de entidades bancarias de la República Argentina. Los resultados obtenidos demostraron que los bancos alcanzaron un buen nivel de eficiencia global. Se encontró que los más eficientes son las sucursales de entidades financieras del exterior y los bancos locales de capital extranjero.

Fatores de risco nas alianças em projetos de TI: estudo de casos no Banco Central do Brasil

Em resposta às crescentes mudanças e pressões da concorrência, número cada vez maior de empresas tem estabelecido alianças como forma de complementar seus recursos e assegurar suas vantagens competitivas. Embora essas alianças sejam uma boa opção estratégica para as empresas, existem evidências de grande taxa de fracasso. Muitos estudos têm analisado os fatores de sucesso das parcerias, mas poucos têm dado ênfase às dificuldades e à prevenção de riscos. O objetivo neste artigo consiste em apresentar os resultados de uma pesquisa em que se buscou identificar os fatores de risco que dificultam as alianças no caso de projetos de Tecnologia da Informação (TI). Trata-se de uma pesquisa exploratória, focada em cinco projetos estratégicos de TI do Banco Central do Brasil, desenvolvidos em parceria com outras instituições públicas e privadas, a maioria delas nacionais e uma estrangeira. Apesar de os projetos terem tido sucesso, foi possível identificar como principais fatores de risco: falta de planejamento da aliança, falta de negociação entre parceiros, falta de comprometimento dos parceiros e falta de apoio institucional. A pesquisa trouxe lições relevantes para o gerenciamento de projetos que podem beneficiar outras alianças em projetos de TI.

Procedimiento estandarizado de operación: Método de determinación de la tasa de ingestión de organismos filtradores (PEO-IMP-TI-001)

Presenta el procedimiento estándar de operación (PEO) para el método de determinación de la tasa de ingestión de organismos acuáticos filtradores. Describe el equipamiento, materiales necesarios, procedimientos de campo y laboratorio y análisis e interpretación de los datos.

Reliure de : La Biblia laquale in se contiene i sacrosanti libri del Vecchio & Nuovo Testamento , i quali ti apporto christianissimo lettore, tradotti da la hebraica & greca verita in lingua toscana, nuovamente corretta & con ogni diligentia stampata. Con le concordantie di tutta essa scrittura santa, et li summari de ciascun capitolo. Et con due tavole...

[Bible (italien). 1547. Brucioli]

Electron capture and emission by the Ti acceptor level in GaP

Previously reported results on deep level optical spectroscopy, optical absorption, deep level transient spectroscopy, photoluminescence excitation, and time resolved photoluminescence are reviewed and discussed in order to know which are the mechanisms involved in electron capture and emission of the Ti acceptor level in GaP. First, the analysis indicates that the 3T1(F) crystal¿field excited state is not in resonance with the conduction band states. Second, it is shown that both the 3T2 and 3T1(F) excited states do not play any significant role in the process of electron emission and capture.

The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

We have studied the effects of rapid thermal annealing at 1300¿°C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si3N4 crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3¿nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.

Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

Nitrogen doped silicon (NIDOS) films have been deposited by low-pressure chemical vapor deposition from silane SiH4 and ammonia NH3 at high temperature (750°C) and the influences of the NH3/SiH4 gas ratio on the films deposition rate, refractive index, stoichiometry, microstructure, electrical conductivity, and thermomechanical stress are studied. The chemical species derived from silylene SiH2 into the gaseous phase are shown to be responsible for the deposition of NIDOS and/or (silicon rich) silicon nitride. The competition between these two deposition phenomena leads finally to very high deposition rates (100 nm/min) for low NH3/SiH4 gas ratio (R¿0.1). Moreover, complex variations of NIDOS film properties are evidenced and related to the dual behavior of the nitrogen atom into silicon, either n-type substitutional impurity or insulative intersticial impurity, according to the Si¿N atomic bound. Finally, the use of NIDOS deposition for the realization of microelectromechanical systems is investigated.

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

High quantum efficiency erbium doped silicon nanocluster (Si-NC:Er) light emitting diodes (LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a complementary metal-oxide-semiconductor (CMOS) line. Erbium (Er) excitation mechanisms under direct current (DC) and bipolar pulsed electrical injection were studied in a broad range of excitation voltages and frequencies. Under DC excitation, Fowler-Nordheim tunneling of electrons is mediated by Er-related trap states and electroluminescence originates from impact excitation of Er ions. When the bipolar pulsed electrical injection is used, the electron transport and Er excitation mechanism change. Sequential injection of electrons and holes into silicon nanoclusters takes place and nonradiative energy transfer to Er ions is observed. This mechanism occurs in a range of lower driving voltages than those observed in DC and injection frequencies higher than the Er emission rate.

Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile

Arrays of vertically aligned ZnO:Cl/ZnO core-shell nanowires were used to demonstrate that the control of the coaxial doping profile in homojunction nanostructures can improve their surface charge carrier transfer while conserving potentially excellent transport properties. It is experimentally shown that the presence of a ZnO shell enhances the photoelectrochemical properties of ZnO:Cl nanowires up to a factor 5. Likewise, the ZnO shell promotes the visible photoluminescence band in highly conducting ZnO:Cl nanowires. These lines of evidence are associated with the increase of the nanowires" surface depletion layer