944 resultados para NYLON-6 CLAY HYBRID
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Artículo científico: postprint
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A method has been evolved to enhance the production of natural feed in brackish water fish farms by providing substrates for bio-growth ('aquafeed' production) which is a biomass complex consisting of sedentary and associated organisms of plant and animal species. The seasonal fluctuations of the aquafeed production over different substrates ranged as: 787-1830g/coconut leaf (6m²)/45 days, 16.0-072.9g/glass panel (2x10x10cm²)/30 days, 52-230g/nylon mat (2x25x25cm²)/30 days and 18.6-123.1g/wooden block (6x10x10cm²)/30 days. The average dry weight composition of the major components of aquafeed obtained in the present study was sand-silt-clay 40%, protein 22%, carbohydrate (water soluble) 1.8% and fat 3.35% (water content 85%). Mugil cephalus of 1.85 cm reared in a 0.01ha pond and fed on aquafeed attained a size of 23 cm length and 146.73g weight during one year. Survival rate was 54% at a density of 1000/ha. Salinity and temperature of the pond during the culture period ranged between 1.4 and 32.8‰ and 28.1 and 36.5°C respectively.
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Future microrobotic applications require actuators that can generate a high actuation force and stroke in a limited volume. Up to now, little research has been performed on the development of pneumatic and hydraulic microactuators, although they offer great prospects in achieving high force densities. One of the main technological barriers in the development of these actuators is the fabrication of powerful seals with low leakage. This paper presents a seal technology for linear fluidic microactuators based on ferrofluids. A design and simulation method for these seals has been developed and validated by measurements on miniaturized actuator prototypes. These actuators have an outside diameter of 2 mm, a length of 13 mm and have been tested using both pressurized air and water. Our current actuator prototypes are able to operate at pressures up to 1.6 MPa without leakage. At these pressures, forces up to 0.65 N have been achieved. The stroke of the actuators is 10 mm. © 2009 Elsevier B.V. All rights reserved.
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We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively. © 1989-2012 IEEE.
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Short hairpin RNA (shRNA) directed by RNA polymerase III (Pol III) or Pol II promoter was shown to be capable of silencing gene expression, which should permit analyses of gene functions or as a potential therapeutic tool. However, the inhibitory effect of shRNA remains problematic in fish. We demonstrated that silencing efficiency by shRNA produced from the hybrid construct composed of the CMV enhancer or entire CMV promoter placed immediately upstream of a U6 promoter. When tested the exogenous gene, silencing of an enhanced green fluorescent protein (EGFP) target gene was 89.18 +/- 5.06% for CMVE-U6 promoter group and 88.26 +/- 6.46% for CMV-U6 promoter group. To test the hybrid promoters driving shRNA efficiency against an endogenous gene, we used shRNA against no tail (NTL) gene. When vectorized in the zebrafish, the hybrid constructs strongly repressed NTL gene expression. The NTL phenotype occupied 52.09 +/- 3.06% and 51.56 +/- 3.68% for CMVE-U6 promoter and CMV-U6 promoter groups, respectively. The NTL gene expression reduced 82.17 +/- 2.96% for CMVE-U6 promoter group and 83.06 +/- 2.38% for CMV-U6 promoter group. We concluded that the CMV enhancer or entire CMV promoter locating upstream of the U6-promoter could significantly improve inhibitory effect induced by the shRNA for both exogenous and endogenous genes compared with the CMV promoter or U6 promoter alone. In contrast, the two hybrid promoter constructs had similar effects on driving shRNA.
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Two 8-week growth trials were conducted to determine the effect of continuous (CF) versus 2 meals day(-1) (MF) feeding and 30% starch versus 30% glucose diets on the carbohydrate utilization of 9.0-g white sturgeon and 0.56-g hybrid tilapia. The two trials were conducted under similar conditions except that sturgeon were kept at 18.5 degrees C in a flow-through system and tilapia were kept at 26 degrees C in a recirculating system. Significantly (P less than or equal to 0.05) higher specific growth rate (SGR), feed efficiency (FE), protein efficiency ratio (PER), body lipid content and liver glucose-6-phosphate dehydrogenase (G6PDH) and 6-phosphogluconate dehydrogenase (6PGDH) activities were observed in the CF than MF sturgeon. Only SGR, FE and PER were higher in sturgeon fed the starch than the glucose diets. Only higher liver G6PDH and malic enzyme (ME) activities were observed in the CF than MF tilapia but higher SGR, FE, PER and liver G6PDH, 6PGDH and ME activities were observed in tilapia fed the starch diet than those fed the glucose diet. This suggested that carbohydrate utilization by sturgeon was more affected by feeding strategy whereas tilapia was more affected by carbohydrate source. Furthermore, white sturgeon can utilize carbohydrates better than hybrid tilapia regardless of feeding strategy and carbohydrate source.
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We reported the all electronic demonstration of spin injection and detection in the trilayers with hybrid structure of CoFeB/GaAs/(Ga,Mn)As (metal/insulator semiconductor) by probing the magnetoresistance at low temperature from 1.8 to 30 K. Tunneling magnetoresistance (TMR) ratios of 3.8%, 4.7%, 2.9%, and 1.4% at 1.8, 10, 20, and 30 K, respectively, were observed. Bias dependence of both the junction resistance and TMR ratio was studied systematically. V-half at which TMR drops to half of its maximum is 6.3 mV, being much smaller compared to that observed in (Ga,Mn)As/ZnSe/Fe and (Ga,Mn)As/AlAs/MnAs hybrid structures, indicating lower Fermi energy of (Ga,Mn)As.
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Tunneling magnetoresistance (TMR) in Ga(0.9)2Mn(0.08)As/Al-O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field vertical bar H vertical bar <= 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 mu A. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3068418]
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A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.
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We present a novel 800-nm Bragg-mirror-based semiconductor saturable absorption mirror with low temperature and surface state hybrid absorber, with which we can realize the passive soliton mode locking of a Ti:sapphire laser pumped by 532-nm green laser which produces pulses as short as 37 fs. The reflection bandwidth of the mirror is 30 nm and the pulse frequency is 107 MHz. The average output power is 1.1 W at the pump power of 7.6 W.
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This paper proposes two kinds of novel hybrid voltage controlled ring oscillators (VCO) using a single electron transistor (SET) and metal-oxide-semiconductor (MOS) transistor. The novel SET/MOS hybrid VCO circuits possess the merits of both the SET circuit and the MOS circuit. The novel VCO circuits have several advantages: wide frequency tuning range, low power dissipation, and large load capability. We use the SPICE compact macro model to describe the SET and simulate the performances of the SET/MOS hybrid VCO circuits by HSPICE simulator. Simulation results demonstrate that the hybrid circuits can operate well as a VCO at room temperature. The oscillation frequency of the VCO circuits could be as high as 1 GHz, with a -71 dBc/Hz phase noise at 1 MHz offset frequency. The power dissipations are lower than 2 uW. We studied the effect of fabrication tolerance, background charge, and operating temperature on the performances of the circuits.
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Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.
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We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. The as-grown InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.95 eV) lasers achieve a low threshold current density of 150 A/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). Both broad-area and ridge-waveguide laser devices are fabricated. For 100-mu m-wide stripe lasers with a cavity length of 800 Irm, a slope efficiency of 1.05 W/A and a characteristic temperature coefficient (T-0) of 230 K are achieved. The lifetime test demonstrates a reliable performance. The comparison with our fabricated InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.87 eV) lasers and Al-free InGaAs-InGaAsP (1.6 eV)-InGaP lasers are also given and discussed. The selective etching between AlGaAs and InGaAsP is successfully used for the formation of a ridge-waveguide structure. For 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mW is achieved. The fundamental mode output power can be up to 190 mW with a slope efficiency as high as 0.94 W/A.