Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures
Data(s) |
2009
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Resumo |
Tunneling magnetoresistance (TMR) in Ga(0.9)2Mn(0.08)As/Al-O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field vertical bar H vertical bar <= 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 mu A. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3068418] |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Du GX ; Babu MR ; Han XF ; Deng JJ ; Wang WZ ; Zhao JH ; Wang WD ; Tang JK .Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures ,JOURNAL OF APPLIED PHYSICS,2009 ,105(7):Art. No. 07C707 |
Palavras-Chave | #半导体物理 #SPIN INJECTION #TRILAYER STRUCTURES #HETEROSTRUCTURES #(GA #JUNCTIONS #MN)AS |
Tipo |
期刊论文 |