Novel hybrid voltage controlled ring oscillators using single electron and MOS transistors
Data(s) |
2007
|
---|---|
Resumo |
This paper proposes two kinds of novel hybrid voltage controlled ring oscillators (VCO) using a single electron transistor (SET) and metal-oxide-semiconductor (MOS) transistor. The novel SET/MOS hybrid VCO circuits possess the merits of both the SET circuit and the MOS circuit. The novel VCO circuits have several advantages: wide frequency tuning range, low power dissipation, and large load capability. We use the SPICE compact macro model to describe the SET and simulate the performances of the SET/MOS hybrid VCO circuits by HSPICE simulator. Simulation results demonstrate that the hybrid circuits can operate well as a VCO at room temperature. The oscillation frequency of the VCO circuits could be as high as 1 GHz, with a -71 dBc/Hz phase noise at 1 MHz offset frequency. The power dissipations are lower than 2 uW. We studied the effect of fabrication tolerance, background charge, and operating temperature on the performances of the circuits. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhang, WC (Zhang, Wancheng); Wu, NJ (Wu, Nan-Jian); Hashizume, T (Hashizume, Tamotsu); Kasai, S (Kasai, Seiya) .Novel hybrid voltage controlled ring oscillators using single electron and MOS transistors ,IEEE TRANSACTIONS ON NANOTECHNOLOGY,MAR 2007,6 (2):146-157 |
Palavras-Chave | #半导体物理 #hybrid |
Tipo |
期刊论文 |