Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy

We demonstrate tunnel magnetoresistance junctions based on a trilayer system consisting of an epitaxial NiMnSb, an aluminum oxide, and a CoFe trilayer. The junctions show a tunneling magnetoresistance of Delta R/R of 8.7% at room temperature which increases to 14.7% at 4.2 K. The layers show a clear separate switching and a small ferromagnetic coupling. A uniaxial in-plane anisotropy in the NiMnSb layer leads to different switching characteristics depending on the direction in which the magnetic field is applied, an effect which can be used for sensor applications. (c) 2006 American Institute of Physics.

Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures

Ballistic spin polarized transport through diluted magnetic semiconductor single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits oscillating behavior when the magnetic field is varied. An interesting beat pattern in the TMR and spin polarization is found for different nonmagnetic semiconductor/diluted magnetic semiconductor double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are split by the s-d exchange interaction.

Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures

Tunneling magnetoresistance (TMR) in Ga(0.9)2Mn(0.08)As/Al-O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field vertical bar H vertical bar <= 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 mu A. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3068418]

Magnetoresistance in a nominally undoped InGaN thin film

The magnetotransport properties of a nominally undoped InGaN thin film grown by metal-organic chemical vapor deposition were investigated. Resistivity was measured under a magnetic field up to 5 T over the temperature range of 3 to 298 K. The film exhibits a negative magnetoresistance at low temperatures. Its magnitude decreases with increasing temperature, and turns to be positive for temperatures above 100 K. The negative component was described by a model proposed by Khosla and Fischer for spin scattering of carriers in an impurity band. The positive part was attributed to the effect of Lorentz force on the carrier motion. Agreement between the model and the data is presented.

Giant Goos-Hanchen displacement enhanced by dielectric film in frustrated total internal reflection configuration

It is predicted that the Goos-Hanchen displacement in the usual frustrated total internal reflection configuration can be resonantly enhanced greatly by coating a dielectric thin film onto the surface of the first prism when the angle of incidence is larger than the critical angle for total reflection at the prism-vacuum interface and is smaller than but close to the critical angle for total reflection at the prism-film interface. Theoretical analysis shows that the displacement of transmitted beam is about half the displacement of reflected beam in the thick limit of the vacuum gap between the two prisms. This is to be compared with the relation in the usual symmetric double-prism configuration that the displacement of transmitted beam is equal to the displacement of reflected beam. Numerical simulations for a Gaussian incident beam of waist width of 100 wavelengths reveal that when the dielectric thin film is of the order of wavelength in thickness, both the reflected and transmitted beams maintain well the shape of the incident beam in the thick limit of the vacuum gap. So largely enhanced displacements would lead to applications in optical devices and integrated optics. (c) 2007 American Institute of Physics.

GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES

We have observed periodic current and capacitance oscillations with increasing bias on doped GaAs/AlAs superlattices at a temperature of 77 K. The maximum of the observed capacitance is larger than usual geometric capacitances in superlattices, being comparable to the quantum capacitance of the two-dimensional (2D) electron system proposed by Luryi. A model based on well-to-well sequential resonant tunneling due to the movement of the boundary between the electric field domains in superlattice was proposed to explain the origin of the giant capacitance oscillations. It was demonstrated that the capacitance at the peaks of capacitance-voltage (C-V) characteristics reflects the quantum capacitance of the space-charge region at the boundary between the domains (a novel 2D electron system).

Isoscalar Giant Monopole Resonance in Relativistic Continuum Random Phase Approximation

The isoscalar giant monopole resonance (ISGMR) in nuclei is studied in the framework of a fully consistent relativistic continuum random phase approximation (RCRPA). In this method the contribution of the continuum spectrum to nuclear excitations is treated exactly by the single particle Green's function technique. The negative energy states in the Dirac sea are also included in the single particle Green's function in the no-sea approximation. The single particle Green's function is calculated numerically by a proper product of the regular and irregular solutions of the Dirac equation. The strength distributions in the RCRPA calculations, the inverse energy-weighted sum rule m(-1) and the centroid energy of the ISGMR in Sn-120 and Pb-208 are analysed. Numerical results of the RCRPA are checked with the constrained relativistic mean field model and relativistic random phase approximation with a discretized spectrum in the continuum. Good agreement between them is achieved.

Symmetry energy and isovector giant dipole resonance in finite nuclei

We study the relationship between the properties of the isovector giant dipole resonance of finite nuclei and the symmetry energy in the framework of the relativistic mean field theory with six different parameter sets of nonlinear effective Lagrangian. A strong linear correlation of excited energies of the dipole resonance in finite nuclei and symmetry energy at and below the saturation density is found. This linear correlation leads to the symmetry energy at the saturation density at the interval 33.0MeV <= S(po) <= 37.0 MeV. The comparison to the present experimental data in the soft dipole mode of (132) Sn constrains approximately the symmetry energy at p = 0.1 fm(-3) at the interval 21.2MeV similar to 22.5 MeV. It is proposed that a precise measurement of the soft dipole mode in neutron rich nuclei could set up an important constraint on the equation of state for asymmetric nuclear matter.

Impacts of the Wenchuan Earthquake on the Giant Panda Nature Reserves in China

Ministry of Science and Technology of China [2008BAK47B02, 2008BAC44B04, 2008BAK50B06, 2008BAC43B01, 2006BAC08B06]

Direct formation of giant vesicles from synthetic polypeptides

This report describes direct formation of giant vesicles from a series of poly(L-lysine)-block-poly(L-phenylalanine) (PLL-b-PPA) block copolymers from their water solution. These polymers are prepared by successive ring-opening polymerization (ROP) of the two alpha-amino acid N-carboxyanhydrides and then removing the side chain protecting groups by acidolysis. The structures of the copolymers are confirmed by nuclear magnetic resonance (NMR), differential scanning calorimetry (DSC), and size exclusion chromatography ( SEC). The vesicles are studied by atomic force microscopy (AFM), field emission scanning electron microscopy (ESEM), and confocal laser scanning microscopy (CLSM). Rhodamine B is used as a fluorescent probe to confirm the existence of the vesicle with an aqueous interior. The vesicle size is in the range 0.55-6 mu m, depending on the absolute and relative lengths of the two blocks, on initial polymer concentration, and on solution pH. The vesicles are still stable in water for 2 months after preparation. Addition of the copolymer to DNA solution results in complex formation with it. The complex assumes the morphology of irregular particles of less than 2 mu m. It is expected to be used in drug and gene delivery.

Improvement of low-field magnetoresistance and Curie temperature in the hole doping of double perovskites Sr2FeMoO6 polycrystals

Polycrystalline Sr2FeMoO6 compounds with most vacancies at normal Fe sites were fabricated through Mo hole doping; its effect is similar to Fe3+ by our estimation. Sharp increase of magnetoconductance at low field was evidence of spin-polarized tunneling between the grains. The room temperature low-field magnetoresistivity at optimal doping x=0.03 is 8.5% in 3000 Oe and increases to 11.4% in 1 T associated with soft magnetic behaviors; furthermore it exhibits a ferromagnetic Curie temperature of 450 K, connected with hole doping effect. The improved magnetoresistivity behavior was related to Curie temperature.

A first-principles study of the different magnetoresistance mechanisms in CaCu3Mn4O12 and LaCu3Mn4O12

The electronic structure of CaCu3Mn4O12 and LaCu3Mn4O12 was investigated using a full-potential linearized augmented plane wave method within the Generalized Gradient Approximation (GGA). The ferrimagnetic and ferromagnetic states in these two compounds were investigated and the calculated spin magnetic moments were found to be close to the available experimental values. Calculations of spin polarization for these two oxides show that the ferrimagnetic configurations are the energetically favored ground state, which is consistent with experimental observation. The calculations predict that CaCu3Mn4O12 is a semiconductor and that LaCu3Mn4O12 is a half-metallic material. Furthermore, the relevance of these different electronic structures to the magnetoresistance is discussed.