Magnetoresistance in a nominally undoped InGaN thin film

The magnetotransport properties of a nominally undoped InGaN thin film grown by metal-organic chemical vapor deposition were investigated. Resistivity was measured under a magnetic field up to 5 T over the temperature range of 3 to 298 K. The film exhibits a negative magnetoresistance at low temperatures. Its magnitude decreases with increasing temperature, and turns to be positive for temperatures above 100 K. The negative component was described by a model proposed by Khosla and Fischer for spin scattering of carriers in an impurity band. The positive part was attributed to the effect of Lorentz force on the carrier motion. Agreement between the model and the data is presented.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28T13:55:16Z No. of bitstreams: 1 Magnetoresistance in a nominally undoped InGaN thin film.pdf: 349470 bytes, checksum: 42169f955f4d6e8453320a8e2c8866ec (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-28T14:06:31Z (GMT) No. of bitstreams: 1 Magnetoresistance in a nominally undoped InGaN thin film.pdf: 349470 bytes, checksum: 42169f955f4d6e8453320a8e2c8866ec (MD5)

Made available in DSpace on 2010-04-28T14:06:31Z (GMT). No. of bitstreams: 1 Magnetoresistance in a nominally undoped InGaN thin film.pdf: 349470 bytes, checksum: 42169f955f4d6e8453320a8e2c8866ec (MD5) Previous issue date: 2010

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