The microstructure and its high-temperature annealing behaviours of a-Si : O : H film

The microstructure and its annealing behaviours of a-Si:O:H film prepared by PECVD are investigated in detail using micro-Raman spectroscopy, X-ray photoelectron spectroscopy and Infrared absorption spectroscopy. The results indicate that the as-deposited a-Si:O:H film is structural inhomogeneous, with Si-riched phases surrounded by O-riched phases. The Si-riched phases are found to be nonhydrogenated amorphous silicon (a-Si) clusters, and the O-riched phases SiOx:H (x approximate to 1. 35) are formed by random bonding of Si, O and H atoms. By high-temperature annealing at 1150 degreesC, the SiOx:H (x approximate to 1.35) matrix is shown to be transformed into SiO2 and SiOx ( x approximate to 0.64), during which all of the hydrogen atoms in the film escape and some of silicon atoms are separated from the SiOx:H ( x approximate to 1.35) matrix; The separated silicon atoms are found to be participated in the nucleation and growth processes of solid-phase crystallization of the a-Si clusters, nano-crystalline silicon (ne-Si) is then formed. The microstructure of the annealed film is thereby described with a multi-shell model, in which the ne-Si clusters are embedded in SiOx (x = 0.64) and SiO2. The former is located at the boundaries of the nc-Si clusters, with a thickness comparable with the scale of nc-Si clusters, and forms the transition oxide layer between the ne-Si and the SiO2 matrix.

Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

Infrared absorption spectroscopy, optical transient current spectroscopy (OTCS), and photoluminescence (PL) spectroscopy are used to investigate the annealing induced evolution of defects in low-temperature (LT)-grown GaAs-related materials. Two LT samples of bulk GaAs (sample A) and GaAs/AlxGa1-xAs multiple-quantum-well. (MQW) structure (sample B) were grown at 220 and 320 degreesC on (001) GaAs substrates, respectively. A strong defect-related absorption band has been observed in both as-grown samples A and B. It becomes weaker in samples annealed at temperatures above 600 degreesC. In sample A, annealed in the range of 600-800 degreesC, a large negative decay signal of the optical transient current (OTC) is observed in a certain range of temperature, which distorts deep-level spectra measured by OTCS, making it difficult to identify any deep levels. At annealing temperatures of 600 and 700 degreesC, both As-Ga antisite and small As cluster-related deep levels are identified in sample B. It is found that compared to the As cluster, the As-Ga antisite has a larger activation energy and carrier capture rate. At an annealing temperature of 800 degreesC, the large negative decay signal of the OTC is also observed in sample B. It is argued that this negative decay signal of the OTC is related to large arsenic clusters. For sample B, transient PL spectra have also been measured to study the influence of the, defect evolution on optical properties of LT GaAs/AlxGa1-xAs MQW structures. Our results clearly identify a defect evolution from AS(Ga) antisites to arsenic clusters after annealing.

Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP

The concentration of hydroen-indium vacancy complex VInH4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The VInH4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to similar to 10(16) cm(-3) in as-grown liquid encapsulated Czochralski InP. The concentration of the VInH4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. (C) 1998 American Institute of Physics, [S0003-6951(98)04435-0].

Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions

Nanocrystalline Ge:H thin films were deposited simultaneously on both electrodes of a conventional capacitively coupled reactor for plasma enhanced chemical vapor deposition using highly H-2 diluted GeH4 as the source gas. The structure of the films was investigated by Raman scattering and X-ray diffraction as a function of substrate temperature, H-2 dilution, and r.f. power. The hydrogen concentrations and bonding configurations were determined by infrared absorption spectroscopy. For anodic deposition, the preferred crystallographic orientation and film crystallinity depend rather strongly on the deposition parameters. This dependence can be explained by changing surface mobilities of adsorbed precursors due to changes in the hydrogen coverage of the growing surface. Cathodic deposition is much less sensitive to variations in the deposition parameters. It generally results in films of high crystallinity with randomly oriented crystallizes. Some possible mechanisms for these differences between anodic and cathodic deposition are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.

氢化物发生石墨炉原子吸收光谱研究

石墨管原位富集氢化物是近年来研究者比较感兴趣的一个问题，本工作建立了自己的氢化物发生石墨炉原位富集系统。结果表明：氢化物发生器的体积和导气管的材料均影响分析灵敏度，氢化物直接富集在石墨管内壁上比在平台上效果好，石墨炉作原子化器，可以大大减小氢化物形成元素的干扰，涂钯石墨管能在较低温度下富集氢化物应与钯的催化性能有关。

Density Gradient Ultracentrifugation of Nanotubes: Interplay of Bundling and Surfactants Encapsulation

Density gradient ultracentrifugation (DGU) has emerged as a promising tool to prepare chirality enriched nanotube samples. Here, we assess the performance of different surfactants for DGU. Bile salts (e.g., sodium cholate (SC), sodium deoxycholate (SDC), and sodium taurodeoxycholate (TDC)) are more effective in individualizing Single Wall Carbon Nanotubes (SWNTs) compared to linear chain surfactants (e.g., sodium dodecylbenzene sulfonate (SDBS) and sodium dodecylsulfate (SDS)) and better suited for DGU. Using SC, a narrower diameter distribution (0.69-0.81 nm) is achieved through a single DGU step on CoMoCAT tubes, when compared to SDC and TDC (0.69-0.89 nm). No selectivity is obtained using SDBS. due to its ineffectiveness in debundling. We assign the reduce selectivity of dihydroxy bile salts (S DC and TDC) in comparison with trihydroxy SC to the formation of secondary micelles. This is determined by the number and position of hydroxyl ( OH) groups on the a-side of the steroid backbone. We also enrich CoMoCAT SWNT in the 0.84-0.92 nm range using the Pluronic F98 triblock copolymer. Mixtures of bile salts (SC) and linear chain surfactants (SOS) are used to enrich metallic and semiconducting laser-ablation grown SWNTs. We demonstrate enrichment of a single chirality, (6,5), combining diameter and metallic versus semiconductillg separation on CoMoCAT samples.

HYDROGEN-RELATED DONOR IN SILICON-CRYSTALS GROWN IN A HYDROGEN ATMOSPHERE

Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 me V below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy.

A RESONANT RAMAN-STUDY ON PHONONS IN GAINAS/ALINAS MULTIPLE-QUANTUM WELLS

The LO phonon modes in the barrier layers of a GaInAs/AlInAs multiple quantum well structure are investigated by resonance Raman scattering (RRS), the excitation laser photon energy tuned to resonate with the above barrier interband transition energy. The resonance enhancement of LO phonon peaks are shown to be caused by Frohlich electron-phonon interaction. The pressure-dependent profiles for both AlAs-like (LO(2) mode) and InAs-like (LO(1) mode) Raman peak intensities are well fitted by the Gaussian lineshape. The shift between these two profiles can be explained by the outgoing RRS mechanism, providing information on the pressure-induced shift of the excitonic transition energy. The amplitude ratios of the two profiles are close to 1, showing a well defined two-mode behavior and the nearly equal polarizability for Al-As and In-As bonds in AlInAs alloy.

Residual donors in undoped LEC InP

Undoped liquid encapsulated Czochralski (LEC) InP samples have been studied by Hall effect, glow discharge mass spectroscopy (GDMS) and infrared absorption spectroscopy. A systematic discrepancy has been found between the Han electron concentration and net donor concentration measured by GDMS. The electron concentration is always higher than the net shallow donor concentration by about (3-6)x10(15)cm(-3). A hydrogen indium vacancy complex donor defect VInH4 was detected regularly by infrared absorption spectroscopy in all undoped LEC InP samples. The fact can be explained by taking into account the existence of the donor defect in as-grown undoped LEC-InP.

Iron related emission spectra in InP

This paper presents a detailed PL study of Fe2+ related four zero-phonon(ZP) lines and their related phonon sidebands. Four zero-phonon transitions at approximate to 2800 cm(-1) along with the accompanying phonon sidebands extending down to 2400 cm(-1). There are ta two prominent regions in the phonon sidebands. One is ascribed to coupling to acoustic-type phonons (2700 cm(-1) region), the other is due to coupling to optic-type phonons (2500 cm(-1) region). Beside broad coupling with lattice modes, there are several groups of lines. They are ascribed to resonant modes, impurities induced gap modes and local modes.

Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient

Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.

ZnO clusters encapsulated inside micropores of zeolites studied by UV Raman and laser-induced luminescence spectroscopies

Using microporous zeolites as host, sub-nanometric ZnO clusters were prepared in the micropores of the host by the incipient wetness impregnation method. A small amount of sub-nanometric ZnO clusters were introduced into the channels of HZSM-5 zeolite, whereas a large quantity of sub-nanometric ZnO clusters can be accommodated in the supercages of HY zeolite and no macrocrystalline ZnO exists on the extra surface of the HY material. The vibrations of the zeolite framework and ZnO were characterized by UV Raman spectroscopy. The optical properties of these ZnO clusters were studied by UV-visible absorption spectroscopy and laser-induced luminescence spectroscopy. It is found that there are strong host-guest interactions between the framework oxygen atoms of zeolite and ZnO clusters influencing the motions of the framework oxygen atoms. The interaction may be the reason why ZnO clusters are stabilized in the pores of zeolites. Different from bulk ZnO materials, these sub-nanometric ZnO clusters exhibit their absorption onset below 265 nm and show a purple luminescence band (centered at 410-445 nm) that possesses high quantum efficiency and quantum size effect. This purple luminescence band most likely originates from the coordinatively unsaturated Zn sites in sub-nanometric ZnO clusters. On the other hand, the differences in the pore structure between HZSM-5 and HY zeolites cause the absorption edge and the purple luminescence band of ZnO clusters in ZnO/HZSM-5 show a red shift in comparison with those of ZnO clusters in ZnO/HY.

原子吸收光谱法测定膜荚黄芪不同器官矿质元素含量

应用混合酸HNO3-HClO4(4∶1)在常压微沸条件下对膜荚黄芪根系及茎叶样品进行消解,采用原子吸收光谱法测定了膜荚黄芪不同器官即根及茎叶中五种人体必需矿质元素K,Fe,Zn,Mn和Cu含量,并对结果进行了统计分析与比较。该方法标准曲线相关系数为0.997 3~0.999 9,加标回收率为92.88%~109.25%,相对标准偏差(RSD,n=5)为0.393 5%~3.175 2%。方法简单,结果可靠。结果显示,膜荚黄芪根及茎叶中5种矿质元素含量顺序均为K>Fe>Zn>Mn>Cu。膜荚黄芪不同器官矿质元素含量不同,根中富含Fe,Zn,Cu元素,根内Fe含量是茎叶的1.54倍。茎叶中也含有丰富的矿质元素,特别是K和Mn元素。茎叶中K含量是根的1.63倍,这与黄芪的药效相符合。试验结果将为研究矿质元素在黄芪植株中的分布以及矿质元素含量与黄芪药效相关性提供理论依据。

Two novel triphenylamine-substituted poly(p-phenylenevinylene) derivatives: synthesis, photo- and electroluminescent properties

Two novel triphenylamine-substituted poly(p-phenylenevinylene) derivatives, P1 and P2, have been successfully synthesized through the Witting-Horner reaction. The structures and properties of the monomers and the resulting polymers were characterized by using H-1 NMR, FT-IR, GPC, TGA, UV-vis absorption spectroscopy, cyclic voltammetry (CV) and electroluminescence (EL) spectroscopy