Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts

A new measurement method for GaN films and their Schottky contacts is reported in this paper. Instead of the fabrication of Ohmic contacts, this measurement is based on a special back-to-back Schottky diode that has a rectifying character. A mathematical model indicates that the electronic parameters of the materials can be deduced from the device's I-V data. In the experiment of an unintentionally doped n-type GaN layer with a residual carrier density 7 x 10(16) cm(-3), the analysis by the new method gives the layer's sheet resistance rho(s) = 497 Omega, the electron mobility mu(n) =, 613 cm(2) V-1 s(-1) and the ideality factor of the Ni/Au-GaN Schottky contacts n = 2.5, which are close to the data obtained by the traditional measurements: rho(s) = 505 Omega, mu(n) = 585 cm(2) V-1 s(-1) and n = 3.0. The method reported can be adopted not only for GaN films but also for other semiconductor materials, especially in the cases where Ohmic contacts of high quality are hard to make or their fabricating process affects the film's character.

A new technique for boosting efficiency of silicon solar cells

A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the system is a V-shaped module (VSM) with two tilted monocrystalline solar cells. Compared to solar cells in a flat orientation, the VSM enhances external quantum efficiency and leads to an increase of 31% in power conversion efficiency. Due to the VSM technique, short-circuit current density was raised from 24.94 to 33.7mA/cm(2), but both fill factor and open-circuit voltage were approximately unchanged. For the VSM similar results (about 30% increase) were obtained for solar cells fabricated by using mono-crystal line silicon wafers with only conventional background impurities. (c) 2004 Elsevier B.V. All rights reserved.

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter-base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in the base section by switching off the Cp2Mg source for appropriate time before the end of base growth. Low temperature growth of the undoped GaN spacer suppresses the Mg redistribution from Mg rich film. The delay rate of the Mg profile in sample C with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples A and B without low temperature spacer. (C) 2005 Elsevier Ltd. All rights reserved.

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

Deep levels in high resistivity GaN epilayers grown by MOCVD

Undoped high resistivity (HR) GaN epilayers were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Thermally stimulated current (TSC) and resistivity measurements have been carried out to investigate deep level traps. Deep levels with activation energies of 1.06eV and 0.85eV were measured in sample 1. Gaussian fitting of TSC spectra showed five deep levels in different samples. (c) 2006 WILEY VCH Vertag GmbH & Co. KGaA, Weinheim

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

人工柠条灌丛林下草地植物群落特征研究

以宁夏固原上黄东山封育的人工柠条(Caragana korshinskii Kom.)灌丛林下草地为研究对象,并以设置在其周围的放牧地天然草地作为对照,采用样线法进行群落调查,分析二者群落数量特征和地上生物量变化,以期为退化草地植被恢复提供理论依据。结果表明:上黄东山封育后的人工柠条灌丛林下草地群落物种数较放牧地显著增加,封育区本氏针茅(Stipa bungeana Trin.)的优势地位明显加强,重要值远大于放牧地;人工灌丛林下草地与放牧地的相似性系数为0.585,表明二者的相似程度不高,人工种植的柠条对群落的结构影响较大,能够改善草地群落的小生境,为新物种出现提供良好的环境;物种丰富度指数和多样性指数(Shannon-winner指数)均表现为人工灌丛林下草地显著高于放牧地(P<0.05),而均匀度指数则相反(P<0.01);人工柠条灌丛林下草地地上生物量鲜重极显著高于放牧地(P<0.01)。

单侧耦合16通道100GHz硅基二氧化硅阵列波导光栅的研制

介绍了一种新型单侧耦合16通道、100GHz通道间隔的硅基二氧化硅阵列波导光栅(AWG).通过增加一个Y分支波导结构,将AWG的输入、输出波导等间距整齐排列,仅用一个光纤阵列(FA)就可以对AWG器件进行耦合封装.这种AWG的结构设计可有效地减小器件尺寸和增加波导结构的弯曲半径,可减少器件的抛光和耦合时间,可降低器件的成本.