Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-Al2O3, which was formed at the early stage of annealing.

Electrical instability in vanadyl-phthalocyanine thin-film transistors

We investigated the electrical instability of vanadyl-phthalocyanine (VOPc) thin-film transistors (TFTs) at various temperatures. The results demonstrate a slow threshold voltage shift in the bias stress process and a rapid recovery after the removal of bias stress, which indicates that a slower degradation process occurs in the on state while a faster removal in the off state of VOPc TFTs. The shift of threshold voltage comes from traps generated at the organic/dielectrics interface. Additionally, a relaxation time of 10(7) s was obtained at room temperature according to the stretched exponential model, which is comparable to a-Si: H TFTs. Therefore, VOPc TFTs are suitable to be applied in flat panel displays.

Thickness dependence of mobility in CuPc thin film on amorphous SiO2 substrate

Hole mobility in a copper-phthalocyanine (CuPc)-based top-contact transistor has been studied with various organic layer thicknesses. It is found that the transistor performance depends on the thickness of the CuPc layer, and the mobility increases with the increase in the CuPc layer and saturated at the thickness of 6 ML. The upper layers do not actively contribute to the carrier transport in the organic films. The morphology of the organic layer grown on the bare SiO2/Si substrate is also presented. The analysis of spatial correlations shows that the CuPc films grow on the SiO2 according to the mixed-layer mode.

Luminescence properties of transparent hybrid thin film covalently linked with lanthanide complexes

Novel hybrid thin films covalently doped with Eu3+ (Tb3+) have been prepared via direct routes involving co-condensation of tetraethoxysilane and phen-Si in the presence of Eu3+ (Tb3+) by spin-casting and their luminescence properties have been investigated in detail. Lanthanide ions can be sensitized by anchored phenanthroline in hybrid thin films. Excitation at the ligand absorption wavelength (272 nm) resulted in the strong emission of the lanthanide ions i.e. Eu3+ D-5(0)-F-7(J) (J=0, 1, 2, 3, 4) emission lines and Tb3+ D-5(4)-F-7(J) (J = 6, 5, 4, 3) due to the energy transfer from the ligands to the lanthanide ions.

„Wyłanianie” się podmiotu w autopojetycznie pojmowanej szkole

Istotą artykułu jest dookreślenia podmiotowości w systemie autopojetycznym, jakim może być szkoła. Na początku postaramy się dookreślić znaczenie rozumienia podmiotu i podmiotowości. Przy czym, poszukując ich źródłowych odniesień odwołamy się do myśli Arystotelesa i Kartezjusza, by następnie poddać je krytyce jako niespełnionych oczekiwań nowożytnej i współczesnej cywilizacji. Jednak, powołując się dalej na poglądy M. Heideggera w tym temacie, okazuje się, że podmiot może być traktowany zgoła inaczej niż opisuje to literatura przedmiotu. Przybliżając zatem inne ujęcie podmiotu, postaramy się wykazać, że wyłania się on na styku jego związku z osobowością, co sugeruje, że to właśnie kształcenie i kształtowanie powinno być traktowane jako najważniejsza dziedzina ludzkiej wiedzy. Dopełnienie tej tezy będzie zatem wymagało wyjaśnienia takich pojęć, jak: osobowość i praktyka edukacyjna. I skoro zatem praktyka edukacyjna jest tak istotna i dla kształtowania osobowości, i wyłaniania się podmiotu, to w dalszej części naszej wypowiedzi położymy nacisk na zinstytucjonalizowaną formę praktyki edukacyjnej czyli nauczanie klasowo-lekcyjne, traktowane jako układ autopojetyczny. Wyjaśnienie znaczenia tego układu będzie stanowić kolejną fazę toczonych tutaj rozważań, a ich celem będzie obrona poglądu, że to, co zostanie „wniesione” do klas szkolnych w postaci zasobów i reguł na początku każdego roku szkolnego, będzie się przekładać na kształtowanie i kształcenie osobowości, i tym samym na możliwości samodoświadczania „Się” podmiotowości. Ponieważ pogląd ten może budzić pewne zastrzeżenia, toteż powołamy się na pewne rozważania dotyczące istnienia tzw. podmiotu rekonstruującego, a więc takiego, który wpisany jest w sens istnienia np. projekcji filmowej, spektaklu teatralnego, czytanej książki.

Reductive elimination of hypersilyl halides from zinc (II) complexes. Implications for electropositive metal thin film growth

Treatment of Zn(Si(SiMe3)3)2 with ZnX2 (X = Cl, Br, I) in tetrahydrofuran (THF) at 23 °C afforded [Zn(Si(SiMe3)3)X(THF)]2 in 83–99% yield. X-ray crystal structures revealed dimeric structures with Zn2X2 cores. Thermogravimetric analyses of [Zn(Si(SiMe3)3)X(THF)]2 demonstrated a loss of coordinated THF between 50 and 155 °C and then single-step weight losses between 200 and 275 °C. The nonvolatile residue was zinc metal in all cases. Bulk thermolyses of [Zn(Si(SiMe3)3)X(THF)]2 between 210 and 250 °C afforded zinc metal in 97–99% yield, Si(SiMe3)3X in 91–94% yield, and THF in 81–98% yield. Density functional theory calculations confirmed that zinc formation becomes energetically favorable upon THF loss. Similar reactions are likely to be general for M(SiR3)n/MXn pairs and may lead to new metal-film-growth processes for chemical vapor deposition and atomic layer deposition.

Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

Molecular dynamics simulation of observed c(4x4) and c(4x3) C60 alignments on the Si(100) reconstructed surface.

We have implemented a large-scale classical molecular dynamics simulation at constant temperature to provide a theoretical insight into the results of a recently performed experiment on the monolayer and multi-layer formations of molecular films on the Si(100) reconstructed dimerized surface. Our simulation has successfully reproduced all of the morphologies observed on the monolayer film by this experiment. We have obtained the formation of both c(4 4) and c(4 3) structures of the molecules and have also obtained phase transitions of the former into the latter.

Nanotech thin film photovoltaics

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

Le film de famille, héritier de la tradition orale

Ce mémoire veut démontrer que le film de famille ainsi que ses conditions de réception empruntent, et ce de façon instinctive, au fonctionnement communicatif et rassembleur de la tradition orale. La parole, l’oralité, devrait être considérée comme le catalyseur de la mise en commun du souvenir que le film de famille suscite. Elle est le véhicule de l’interprétation du message du film de famille en tant que discours familial. D’ailleurs, si l’on compare l’influence des deux registres sensoriels présents dans le médium cinématographique (le visuel et l’oralité), le film de famille reprend davantage les modalités de l’oralité. Conséquemment, son contenu, sa forme et sa finalité correspondent à la définition d’un cinéma de l’oralité, un cinéma de la parole défini par Germain Lacasse. En raison d’une absence de travaux portant spécifiquement sur le sujet, l’objectif de cette recherche est de rapprocher et de définir davantage ces liens qui se sont tissés entre la tradition orale et le film de famille. Dans ce dessein, l’approche théorique développée est basée sur les théories de la tradition orale, sur la théorie de la mémoire collective de Maurice Halbwach et sur les rapports entre le cinéma et l’oralité. Ainsi, les aspects suivants sont abordés : Le rôle de l’oralité dans la constitution de la mémoire familiale, l’apport de l’oralité dans les médias stimulateurs de mémoire familiale et finalement, la forme et le contenu du film de famille en tant qu’aspects distinctifs du cinéma oral. Quatre extraits de films de famille québécois des années 20 à aujourd’hui y sont également analysés.

Une méthode dangereuse : comprendre le processus créateur en musique de film, le cas de Norman McLaren et Maurice Blackburn, David Cronenberg et Howard Shore

Cette version de la thèse a été tronquée des certains éléments protégés par le droit d’auteur. Une version plus complète est disponible en ligne pour les membres de la communauté de l’Université de Montréal et peut aussi être consultée dans une des bibliothèques UdeM.

Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabricated by 12 pulsed laser deposition of ZnO films on p-Si substrates in oxygen ambient at 13 different pressures. These heterojunctions were found to be rectifying with a 14 maximum forward-to-reverse current ratio of about 1,000 in the applied 15 voltage range of -5 V to +5 V. The turn-on voltage of the heterojunctions was 16 found to depend on the ambient oxygen pressure during the growth of the ZnO 17 film. The current density–voltage characteristics and the variation of the 18 series resistance of the n-ZnO/p-Si heterojunctions were found to be in line 19 with the Anderson model and Burstein-Moss (BM) shift.

Studies on the optical band gap and cluster size of the polyaniline thin films irradiated with swift heavy Si ions

Polyaniline thin films prepared by RF plasma polymerisation were irradiated with 92MeV Si ions for various fluences of 1 1011, 1 1012 and 1 1013 ions/cm2. FTIR and UV–vis–NIR measurements were carried out on the pristine and Si ion irradiated polyaniline thin films for structural evaluation and optical band gap determination. The effect of swift heavy ions on the structural and optical properties of plasma-polymerised aniline thin film is investigated. Their properties are compared with that of the pristine sample. The FTIR spectrum indicates that the structure of the irradiated sample is altered. The optical studies show that the band gap of irradiated thin film has been considerably modified. This has been attributed to the rearrangement in the ring structure and the formation of CRC terminals. This results in extended conjugated structure causing reduction in optical band gap

Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts

Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a detailed study is necessary for the interfacial reaction between NiPt alloy film and SiGe substrate. Besides using traditional material characterization techniques, characterization of Schottky diode is a good measure to detect the interface imperfections or defects, which are not easy to be found on large area blanket samples. The I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%) germanosilicides/n-Si₀/₇Ge₀.₃ and silicides/n-Si contact annealed at 400 and 500°C were studied. For Schottky contact on n-Si, with the addition of Pt in the Ni(Pt) alloy, the Schottky barrier height (SBH) increases greatly. With the inclusion of a 10% Pt, SBH increases ~0.13 eV. However, for the Schottky contacts on SiGe, with the addition of 10% Pt, the increase of SBH is only ~0.04eV. This is explained by pinning of the Fermi level. The forward I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%)SiGe/SiGe contacts annealed at 400°C were investigated in the temperature range from 93 to 300K. At higher temperature (>253K) and larger bias at low temperature (<253K), the I-V curves can be well explained by a thermionic emission model. At lower temperature, excess currents at lower forward bias region occur, which can be explained by recombination/generation or patches due to inhomogenity of SBH with pinch-off model or a combination of the above mechanisms.

El apagón analógico : el British Film Institute y la educación en los tres últimos decenios.

Resumen basado en el de la revista. - El artículo pertenece a una sección monográfica de la revista dedicada a Lenguajes fílmicos en la memoria colectiva de Europa