Reductive elimination of hypersilyl halides from zinc (II) complexes. Implications for electropositive metal thin film growth
Contribuinte(s) |
Science Foundation Ireland National Science Foundation, United States SAFC Hitech |
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Data(s) |
28/09/2015
28/09/2015
05/01/2015
13/04/2015
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Resumo |
Treatment of Zn(Si(SiMe3)3)2 with ZnX2 (X = Cl, Br, I) in tetrahydrofuran (THF) at 23 °C afforded [Zn(Si(SiMe3)3)X(THF)]2 in 83–99% yield. X-ray crystal structures revealed dimeric structures with Zn2X2 cores. Thermogravimetric analyses of [Zn(Si(SiMe3)3)X(THF)]2 demonstrated a loss of coordinated THF between 50 and 155 °C and then single-step weight losses between 200 and 275 °C. The nonvolatile residue was zinc metal in all cases. Bulk thermolyses of [Zn(Si(SiMe3)3)X(THF)]2 between 210 and 250 °C afforded zinc metal in 97–99% yield, Si(SiMe3)3X in 91–94% yield, and THF in 81–98% yield. Density functional theory calculations confirmed that zinc formation becomes energetically favorable upon THF loss. Similar reactions are likely to be general for M(SiR3)n/MXn pairs and may lead to new metal-film-growth processes for chemical vapor deposition and atomic layer deposition. Science Foundation Ireland (Grant 09/IN.1/I2628); National Science Foundation, United States (Grant CHE-1212574) Submitted Version Peer reviewed |
Formato |
application/pdf |
Identificador |
SIRIMANNE, C. T., KERRIGAN, M. M., MARTIN, P. D., KANJOLIA, R. K., ELLIOTT, S. D. & WINTER, C. H. 2015. Reductive Elimination of Hypersilyl Halides from Zinc(II) Complexes. Implications for Electropositive Metal Thin Film Growth. Inorganic Chemistry, 54, 7-9. http://dx.doi.org/10.1021/ic502184f 54 1 7 9 0020-1669 http://hdl.handle.net/10468/1991 10.1021/ic502184f Inorganic Chemistry |
Idioma(s) |
en |
Publicador |
American Chemical Society |
Relação |
http://pubs.acs.org/doi/suppl/10.1021/ic502184f |
Direitos |
This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Inorganic Chemistry, copyright © American Chemical Society after peer review. |
Palavras-Chave | #Chemical vapor deposition #Atomic layer deposition (ALD) |
Tipo |
Article (peer-reviewed) |