Electrical instability in vanadyl-phthalocyanine thin-film transistors


Autoria(s): Wang LJ; Liu GJ; Zhu F; Pan F; Yan DH
Data(s)

2008

Resumo

We investigated the electrical instability of vanadyl-phthalocyanine (VOPc) thin-film transistors (TFTs) at various temperatures. The results demonstrate a slow threshold voltage shift in the bias stress process and a rapid recovery after the removal of bias stress, which indicates that a slower degradation process occurs in the on state while a faster removal in the off state of VOPc TFTs. The shift of threshold voltage comes from traps generated at the organic/dielectrics interface. Additionally, a relaxation time of 10(7) s was obtained at room temperature according to the stretched exponential model, which is comparable to a-Si: H TFTs. Therefore, VOPc TFTs are suitable to be applied in flat panel displays.

Identificador

http://ir.ciac.jl.cn/handle/322003/10239

http://www.irgrid.ac.cn/handle/1471x/147355

Idioma(s)

英语

Fonte

Wang LJ;Liu GJ;Zhu F;Pan F;Yan DH.Electrical instability in vanadyl-phthalocyanine thin-film transistors,APPLIED PHYSICS LETTERS,2008,93(17):文献编号:173303

Palavras-Chave #FIELD-EFFECT TRANSISTORS #STABILITY #DEPENDENCE #TIME
Tipo

期刊论文