INVESTIGATION OF NEGATIVE TRANSIENT CURRENT OF ARGON-IMPLANTED GAAS USING PHOTOINDUCED TRANSIENT-CURRENT SPECTROSCOPY

The investigation of deep levels of argon-implanted LEC-grown semi-insulating GaAs with implantation dosages ranging from 1 x 10(11) to 1 x 10(15) cm-2 has been performed. Using a photoinduced transient-current spectroscopy (PITCS) it was demonstrated that, for implantation dosages below 1 X 10(13) cm-2, a negative peak or negative transient current (NTC) was observed in the temperature range from 330 to 350 K. The magnitude of this negative peak increased with dosage up to a level of 1 X 10(12) cm-2, beyond which it decreased with dosage. The dosage dependence of the EL3 peak height and the resistance of the specimen have also been investigated. It was observed that the variation of the EL3 peak height with dosage was similar to the variation of the magnitude of the negative peak, that is the EL3 peak height likewise increased with dosage up to 1 X 10(12) cm-2, and then decreased. The resistance of the original high-resistivity specimen dropped abruptly when the dosage reached 1 X 10(12) cm-2. This critical dosage (1 X 10(12) cm-2) was found to be a threshold for the generation of a highly disordered state.

Electro-luminescence and photo-luminescence from strained SiGe/Si quantum well

Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed.

光通信C波段硅基导模共振窄带滤波器的模拟

结合严格耦合波理论和遗传算法对C波段硅基导模共振滤波器进行了模拟分析.从模拟结果出发详细讨论了光栅周期、填充因子、光栅深度和入射角度对滤波器反射特性的影响.导模共振对光栅周期、填充因子、光栅深度和入射角度都有很高的敏感性,利用这一特点可以设计性能优异的硅基滤波器件.导模共振滤波器的共振波长峰值反射率达到了98.9%,峰值半高宽小于密集渡分复用(DWDM)O.8 nm的要求.

InAs/GaAs单量子点中电子/空穴自旋弛豫

利用分子束外延制备了三种类型量子点样品,它们分别是:未掺杂样品、n型Si调制掺杂样品和p型Be调制掺杂样品.在5 K温度下,采用共聚焦显微镜系统,测量了单量子点的光致发光谱和时间分辨光谱, 研究了单量子点中三种类型激子(本征激子、负电荷激子和正电荷激子)的电子/空穴自旋翻转时间.它们的自旋翻转时间常数分别为: 本征激子的自旋翻转时间约16 ns, 正电荷激子中电子的自旋翻转时间约2 ns, 负电荷激子中空穴的自旋翻转时间约50 ps.

Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD

The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).

Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate

The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal.

典型PPCPs的生态毒理效应与强化处理技术

人类长期且大量的使用药品及个人护理用品（PPCPs），使其持续不断地输入环境，导致它们在环境中的残留浓度日益增加，并对人类和其他生物产生了不良的生态毒理效应。本文以四种典型PPCPs（对乙酰氨基酚、土霉素、三氯生、佳乐麝香）为研究对象，采用常规的毒理学实验方法，研究了它们对小麦种子发芽、根伸长的急性毒性，以及低浓度长期暴露对小麦幼苗叶绿素（CHL）、可溶性蛋白（SP）、过氧化物酶（POD）和超氧化物歧化酶（SOD）等生理生化特性的影响。由于PPCPs具有生态风险性，而传统的水处理工艺却不能有效的将这些物质去除。因此，开发更多的新技术以强化处理PPCPs，使它们在环境中残留的浓度尽可能降低是一项很重要的工作。本研究以零价铁处理有机物的原理为依据，自制铁铜双金属复合物，研究了其对PPCPs溶液的处理效果及影响因素，并对整个过程中的反应机理进行了初探。实验结果表明： 实验浓度下，四种PPCPs与小麦根长及芽长抑制率之间具有良好的剂量-效应关系。根据线性回归方程计算的EC50可知，不同种类的PPCPs对小麦种子发芽的毒性大小不同，而且小麦的芽及根部对不同PPCPs胁迫的敏感部位不同。对乙酰氨基酚、土霉素、三氯生对小麦根长的抑制较芽长显著，它们的EC50分别为668.8 mg/L、34.7 mg/L和147.8mg/L；而佳乐麝香对小麦芽长的抑制更为显著，EC50为143.4 mg/L。实验浓度范围内，四种PPCPs对小麦种子的发芽率均没有显著的抑制作用。四种PPCPs暴露21天后，2.8～22.4 mg/L对乙酰氨基酚、0.15～2.4 mg/L土霉素以及0.2～3.0 mg/L三氯生和佳乐麝香显著抑制小麦叶片/根部中的CHL和SP，而且使POD和SOD酶活性降低或上升，从而打破抗氧化系统的动态平衡；暴露21天内对CHL、SP、POD和SOD等含量在不同PPCPs胁迫下的变化趋势具有各自的特点。 以零价铁降解有机物的原理为依据，自制了铁铜双金属复合体系，以强化处理PPCPs溶液。电子扫描显微镜（SEM）及X-衍射（XRD）分析得出铁铜复合物（FeCu/Cu2O）由Fe、Cu及Cu2O组成。与零价铁相比，FeCu/Cu2O显著提高了对PPCPs的去除效果，主要是由于Cu的存在扩大了反应的电极电位差，即增加了Fe-Cu之间的外加阳极电流，从而加速Fe的阳极溶解，产生更多的高活性物质以更好的去除PPCPs。溶解氧是影响FeCu/Cu2O对PPCPs处理效果的重要因素，它们可以在FeCu/Cu2O表面获得电子后生成O2-，形成类Fenton体系。此外，由于Cu2O的光化学活性，光照也可以强化FeCu/Cu2O对PPCPs的处理效果。不同的反应条件下体系内的pH值及自由基的产生量不同。根据实验现象及相关的经典理论，本文对FeCu/Cu2O处理PPCPs的作用机理进行了初探，认为整个反应过程包括Fe的还原反应、Cu2O的光催化反应、Fe-Cu微电解反应以及絮凝过程等。