Bunga rus bunga roides , A Record New to China ( Xizang AR) with a Note on Trimeresurus tibeta nus( Plate Ⅵ, lower)

1998 年在西藏墨脱县海拔1000 m 左右地方采到成年雌性环蛇1 号, 系我国新纪录。该蛇全长/ 尾长(mm) 1095/ 112 (尾尖断) 。通身背面黑褐色, 后3/ 4 有由背鳞白色点斑缀成的窄横纹约40 个; 腹面浅黑 色, 每隔3 或4 枚腹鳞有不规则的黄白色横斑。尾背有少数不完整的白色纹, 但尾腹面有7 条很明显的横斑。头 部斑纹与M. Smith (1943 : 410) 描述一致, 可能由于蛇龄较老而不清晰。背鳞通身15 行, 脊鳞略扩大; 腹鳞 233 , 尾下鳞35 (略低于文献记载的44～51 , 可能与尾尖断有关) , 除前端第三、四两枚成单外, 其余均成对。 没有颊鳞; 眶前鳞1 , 眶后鳞2 ; 颞鳞1 + 2 ; 上唇鳞7 (22223 式) ; 下唇鳞7 , 第一对在颏鳞后彼此相接, 前4 对 接前颔片; 前颔片大于后颔片, 后者后半介一小鳞。检查一侧, 除前沟牙及其预备牙外, 没有发现其他上颌齿。

电子级气体N2、H2、O2、Ar、He、HCl、CO2、NH3 28种杂质分析技术及质量监控

于G批量导入至Hzhangdi

Cl2／Ar／BCl3ICP刻蚀对AIGaN的损伤研究

感应耦合等离子体（ICP）刻蚀在AlGaN基紫外探测器台面制作中起着重要作用，初步研究了Cl2／Ar／BCl3ICP刻蚀对A1GaN材料的损伤。运用X射线光电子能谱（XPS）对ICP刻蚀前后的n型Al0.45Ga0．55N表面进行了分析，并对刻蚀后AlGaN材料在N2气中快速热退火进行了研究。结果表明，在N2气中550℃退火3min对材料的电学性能有明显的改善作用。

Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 C and then studied using UV–vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles...