The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy

Autoria(s): Li BS(李炳生); Zhang CH(张崇宏); Zhong Yurong; Zhang, LQ
Data(s)

2009
Identificador

http://ir.impcas.ac.cn/handle/113462/122

http://www.irgrid.ac.cn/handle/1471x/127479
Idioma(s)

英语
Fonte

Li BS,Zhang CH,Zhong Yurong,et al. The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy[J]. NIM B,2009,267(14):2395.
Palavras-Chave #材料科学
Tipo

期刊论文
Acesso ao item digital