Synthese und Charakterisierung von Oxidchalkogeniden und Bronzen für die Nanostrukturierung

Ausgehend von der Entdeckung der reversiblen Strukturierung mittels Rastersondenmethoden im Phasensystem Na2O/V2O5/P2O5 wurden im Rahmen dieser Arbeit zwei Ansatzpunkte verfolgt. Einerseits sollten mittels der Schmelzflußelektrolyse einige bereits existierende niederdimensionale Molybdänbronzen mit bekannten elektronischen Übergängen in ausreichend großen Kristallen gezüchtet werden, um sie auf ihre Strukturierungseigenschaften hin zu untersuchen. Gleichzeitig sollte durch Variation versucht werden, neue, bisher unbekannte Bronzen oder reduzierte Oxide zu synthetisieren und charakterisieren. Der zweite Schwerpunkt dieser Arbeit lag in der Synthese und Charakterisierung von Oxidchalkogeniden, bestehend aus einem Seltenerdmetall und einem 3d-Metall von Titan bis hin zu den mittleren Übergangsmetallen. Diese Verbindungen können durch die Kombination der jeweiligen Eigenschaften der oxidischen und chalkogeniden Teilstrukturen völlig neue elektronische und/oder magnetische Eigenschaften aufweisen. Mögliche auftretende Phasenübergänge sind wiederum für Strukturierungsversuche interessant. Die zu den Oxidchalkogeniden durchgeführten Untersuchungen ergaben im Phasensystem Ln/Ti/S/O (Ln = Lanthanoide) insgesamt sechs Verbindungen. Zwei von ihnen, La8Ti9S24O4 und Nd20Ti11S44O6, besitzen als gemeinsames Strukturelement tetranukleare [Ti4(u4-S)2(u2-O)4]-Cluster, bestehend aus vier miteinander über gemeinsame Flächen kondensierte TiS4O2-Oktaeder. Die Titanpositionen innerhalb der Cluster sind mit Ti+3-Ionen besetzt. Beide Verbindungen weisen in einem Temperaturbereich zwischen 150 K und 250 K eine deutlich ausgeprägte Hysterese der magnetischen Suszeptibilität auf, die sich im Falle von La8Ti9S24O4 auf einen Jahn-Teller-Übergang zurückführen läßt. Daneben konnte erstmals eine Serie oxidisch/sulfidisch gemischter Ruddlesden-Popper-Verbindungen mit Ln2Ti2S2O5 (Ln = Pr, Nd, Sm) synthetisiert und charakterisiert werden. Titan liegt als vierwertiges Ion in aus TiSO5-Oktaedern gebildeten Perowskit-Doppelschichten vor. Die neunfach koordinierten Positionen sind mit den Seltenerdmetallionen gefüllt, die zwölffach koordinierten Lagen sind unbesetzt. Bei dem sechsten erhaltene Titanoxidsulfid, La4TiS6.5O1.5, handelt es sich um einen Halbleiter mit einer Bandlücke von etwa 2 eV. Weiterhin gelang es, die Serie Ln2M3S2O8 (Ln = La, Ce, Pr, Nd, Sm; M = Nb, Ta) zu synthetisieren und in ihren physikalischen Eigenschaften zu charakterisieren. Es handelt sich ausnahmslos um Halbleiter mit Bandlücken zwischen E=0.125 eV für La2Nb3S2O8 und E=0.222 eV für Pr2Ta3S2O8. Die Struktur der Oxidsulfide Ce2Ta3S2O8, Pr2Ta3S2O8, Nd2Nb3S2O8 sowie Sm2Ta3S2O8 weist im Gegensatz zu den anderen Verbindungen eine Fehlordnung eines der beiden kristallographisch unabhängigen Nb- bzw. Ta-Atome auf. Daraus resultiert eine Symmetrieerniedrigung von Pnma zu Pbam. Der Einsatz von Europium führte zu einer neuen Modifikation des bronzoiden Oxids EuTa2O6, in der das Europium als Eu+2 vorliegt, wie 151Eu-Mößbauer-Untersuchungen bestätigten. Vor der Durchführung der Kristallzüchtungen mittels der Schmelzflußelektrolysen mußten die benutzen Öfen und Elektrolysezellen geplant und angefertigt werden. Es konnten dann verschiedene blaue, rote und violette Moybdänbronzen (sowie La2Mo2O7) in Kristallen bis zu 25 mm Länge dargestellt werden. Ferner gelang die erste exakte Einkristalluntersuchung der roten Bronze Rb0.33MoO3. Sie verfügt über die höchste d-Elektronen-Lokalisierungsrate aller bekannten roten Bronzen. Die erhaltenen Bronzen wurden teilweise von der Arbeitsgruppe Fuchs, Physikalisches Institut der Westfälischen Wilhelms-Universität Münster, auf ihre Nanostrukturierbarkeit hin untersucht. Dabei ergaben sich zwei verschiedene Strukturierungsmechanismen. Sind es im Fall der blauen Alkalimetall-Molybdänbronzen ausschließlich Lochstrukturen, die entstehen, handelt es sich bei La2Mo2O7 um Hügelstrukturen. Mittels der Schmelzflußelektrolyse konnte auch das gemischtvalente Alkalimetall-Eisenmolybdat NaFe2(MoO4)3 synthetisiert werden. Daneben gelang die Synthese dreier weiterer Alkalimetall-Eisenmolybdate: Cs2Fe2(MoO4)3, NaFe4(MoO4)5 und CsFe5(MoO4)7. Bis auf Cs2Fe2(MoO4)3, welches in der bekannten Langbeinit-Struktur kristallisiert, handelt es sich bei den übrigen Alkalimetall-Eisenmolybdaten um völlig neuartige Käfigverbindungen, bzw. bei CsFe5(MoO4)7 um eine Tunnelverbindung. Die Kristallstrukturen beinhalten kondensierte FeO6-Oktaeder. Im Fall von NaFe2(MoO4)3 lassen sich [Fe2O10]-Einheiten, für NaFe4(MoO4)5 [Fe2O10]- sowie [Fe3O14]-Einheiten, und für CsFe5(MoO4)7 [Fe4O18]-Baueinheiten beobachten. Die Positionen der Fe+2- und Fe+3-Atome in NaFe4(MoO4)5 wurden mit Hilfe einer 57Fe-Mößbauer-Untersuchung bestimmt.

Numerical Modelling of Graphene Nanoribbon-fets for Analog and Digital Applications

Graphene, that is a monolayer of carbon atoms arranged in a honeycomb lattice, has been isolated only recently from graphite. This material shows very attractive physical properties, like superior carrier mobility, current carrying capability and thermal conductivity. In consideration of that, graphene has been the object of large investigation as a promising candidate to be used in nanometer-scale devices for electronic applications. In this work, graphene nanoribbons (GNRs), that are narrow strips of graphene, for which a band-gap is induced by the quantum confinement of carriers in the transverse direction, have been studied. As experimental GNR-FETs are still far from being ideal, mainly due to the large width and edge roughness, an accurate description of the physical phenomena occurring in these devices is required to have valuable predictions about the performance of these novel structures. A code has been developed to this purpose and used to investigate the performance of 1 to 15-nm wide GNR-FETs. Due to the importance of an accurate description of the quantum effects in the operation of graphene devices, a full-quantum transport model has been adopted: the electron dynamics has been described by a tight-binding (TB) Hamiltonian model and transport has been solved within the formalism of the non-equilibrium Green's functions (NEGF). Both ballistic and dissipative transport are considered. The inclusion of the electron-phonon interaction has been taken into account in the self-consistent Born approximation. In consideration of their different energy band-gap, narrow GNRs are expected to be suitable for logic applications, while wider ones could be promising candidates as channel material for radio-frequency applications.

Femtosecond laser-based investigations of magnetic circular dichroism in near-threshold photoemission

During the last decades magnetic circular dichroism (MCD) has attracted much interest and evolved into various experimental methods for the investigation of magnetic thin films. For example, synchrotron-based X-ray magnetic circular dichroism (XMCD) displays the absolute values of spin and orbital magnetic moments. It thereby benefits from large asymmetry values of more than 30% due to the excitation of atomic core-levels. Similarly large values are also expected for threshold photoemission magnetic circular dichroism (TPMCD). Using lasers with photon energies in the range of the sample work function this method gives access to the occupied electronic structure close to the Fermi level. However, except for the case of Ni(001) there exist only few studies on TPMCD moreover revealing much smaller asymmetries than XMCD-measurements. Also the basic physical mechanisms of TPMCD are not satisfactorily understood. In this work we therefore investigate TPMCD in one- and two-photon photoemission (1PPE and 2PPE) for ferromagnetic Heusler alloys and ultrathin Co films using ultrashort pulsed laser light. The observed dichroism is explained by a non-conventional photoemission model using spin-resolved band-structure calculations and linear response theory. For the two Heusler alloys Ni2MnGa and Co2FeSi we give first evidence of TPMCD in the regime of two-photon photoemission. Systematic investigations concerning general properties of TPMCD in 1PPE and 2PPE are carried out at ultrathin Co films grown on Pt(111). Here, photon-energy dependent measurements reveal asymmetries of 1.9% in 1PPE and 11.7% in 2PPE. TPMCD measurements at decreased work function even yield larger asymmetries of 6.2% (1PPE) and 17% (2PPE), respectively. This demonstrates that enlarged asymmetries are also attainable for the TPMCD effect on Co(111). Furthermore, we find that the TPMCD asymmetry is bulk-sensitive for 1PPE and 2PPE. This means that the basic mechanism leading to the observed dichroism must be connected to Co bulk properties; surface effects do not play a crucial role. Finally, the enhanced TPMCD asymmetries in 2PPE compared to the 1PPE case are traced back to the dominant influence of the first excitation step and the existence of a real intermediate state. The observed TPMCD asymmetries cannot be interpreted by conventional photoemission theory which only considers direct interband transitions in the direction of observation (Γ-L). For Co(111), these transitions lead to evanescent final states. The excitation to such states, however, is incompatible with the measured bulk-sensitivity of the asymmetry. Therefore, we generalize this model by proposing the TPMCD signal to arise mostly from direct interband transitions in crystallographic directions other than (Γ-L). The necessary additional momentum transfer to the excited electrons is most probably provided by electron-phonon or -magnon scattering processes. Corresponding calculations on the basis of this model are in reasonable agreement with the experimental results so that this approach represents a promising tool for a quantitative description of the TPMCD effect. The present findings encourage an implementation of our experimental technique to time- and spatially-resolved photoemission electron microscopy, thereby enabling a real time imaging of magnetization dynamics of single excited states in a ferromagnetic material on a femtosecond timescale.

Untersuchungen zur Photophysik einzelner konjugierter Polymerketten bei tiefen Temperaturen

Die spektroskopische Untersuchung einzelner konjugierter Polymermoleküle, welche multichromophore Systeme darstellen, bei 1,2K eröffnete den Zugang zu den unterschiedlichen Chromophoren. In Fluoreszenzemissions- wie -anregungsspektren des Poly(2-methoxy-5-(2’-ethylhexyloxy)-rnp-phenylenvinylen) (MEH-PPV) konnten Nullphononenlinien (rein elektronische (0-0)-Übergänge) emittierender Chromophore beobachtet werden, deren Breiten durch das experimentelle Auflösungsvermögen limitiert waren. Dadurch konnte eine obere Grenze für die homogene Linienbreite festgelegt werden. Infolge starker linearer Elektron-Phonon-Kopplung und spektraler Diffusion war die Beobachtung von Nullphononenlinien jedoch auf eine Minderheit der Chromophorernbeschränkt. In geeigneten Probesystemen konnten in Anregungsspektren auch Nullphononenlinien solcher Chromophore identifiziert werden, die als Donoren im intramolekularen Energietransfer fungieren. Aufgrund der dadurch verkürzten Fluoreszenzlebensdauer und der damit verbundenen Linienverbreiterung erlaubte ihre Untersuchung die Ermittlung von Energietransferraten. Eine bei Proben höherer Molmasse auftretenden niederenergetische Subpopulation an Emittern wurde auf Grundlage ihres Fluoreszenzemissions-, -anregungs- und -abklingverhaltens und unter Berücksichtigung theoretischer Arbeiten auf längere chromophore Einheiten zurückgeführt, die sich infolge von Packungseffekten in geordneten Regionen der Polymerkette ausbilden. Die schwächere lineare Elektron-Phonon-Kopplung des leiterartig verknüpften Polypentaphenylen (LPPentP) äußerte sich in einer erhöhten Wahrscheinlichkeit des Auftretens von Nullphononenlinien. Die genaue Bestimmung von Energietransferraten litt allerdings unter einem weiteren signifikanten Beitrag zur Linienbreite neben der Lebensdauer des angeregten Zustandes (möglicherweisernspektrale Diffusion oder schnelle Dephasierungsprozesse).

Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance

The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. In contrast, a marked gradual reduction in the maximum drain-source current density (IDS max) and maximum transconductance (gm max), as well as in fT and fmax, was observed as the N2 plasma power increases (up to 40% decrease for 210 W). Different mechanisms were proposed to be dominant as a function of the discharge power range. A good correlation was observed between the device electrical characteristics and the surface assessment by atomic force microscopy and Kelvin force microscopy techniques.

Electrochemical potentials (Quasi-Fermi Levels) and the operation of hot-carrier, impact-ionization, and intermediate-band solar cells

In the framework of the so-called third generation solar cells, three main concepts have been proposed in order to exceed the limiting efficiency of single-gap solar cells: the hot-carrier solar cell, the impact-ionization or multiple-exciton-generation solar cell, and the intermediate-band solar cell. At first sight, the three concepts are different, but in this paper, we illustrate how all these concepts, including the single-gap solar cell, share a common trunk that we call "core photovoltaic material." We demonstrate that each one of these next-generation concepts differentiates in fact from this trunk depending on the hypotheses that are made about the physical principles governing the electron electrochemical potentials. In the process, we also clarify the differences between electron, phonon, and photon chemical potentials (the three fundamental particles involved in the operation of the solar cell). The in-depth discussion of the physics involved about the operation of these cells also provides new insights about the operation of these cells.

The nature of the excited state of the reaction center of photosystem II of green plants: A high-resolution fluorescence spectroscopy study

We studied the electronically excited state of the isolated reaction center of photosystem II with high-resolution fluorescence spectroscopy at 5 K and compared the obtained spectral features with those obtained earlier for the primary electron donor. The results show that there is a striking resemblance between the emitting and charge-separating states in the photosystem II reaction center, such as a very similar shape of the phonon wing with characteristic features at 19 and 80 cm−1, almost identical frequencies of a number of vibrational modes, a very similar double-Gaussian shape of the inhomogeneous distribution function, and relatively strong electron-phonon coupling for both states. We suggest that the emission at 5 K originates either from an exciton state delocalized over the inactive branch of the photosystem or from a fraction of the primary electron donor that is long-lived at 5 K. The latter possibility can be explained by a distribution of the free energy difference of the primary charge separation reaction around zero. Both possibilities are in line with the idea that the state that drives primary charge separation in the reaction center of photosystem II is a collective state, with contributions from all chlorophyll molecules in the central part of the complex.

Supercondutividade em ligas de Ta1-xZrx

No presente estudo, amostras policristalinas ricas em Ta e com estequiometrias Ta1-xZrx; x < 0.15; foram preparadas através da mistura apropriada dos elementos metálicos, os quais foram fundidos em forno a arco elétrico sobre uma placa de cobre refrigerada a água e sob atmosfera de argônio de alta pureza. Os padrões de difração de raios-X das ligas, como fundidas (as cast) e tratadas termicamente a 850 °C por 24 h, revelaram a ocorrência de uma estrutura cristalina cúbica de corpo centrada bcc, tipo W, e parâmetros de rede que aumentam suavemente com o aumento do teor de Zr nas ligas. Medidas de susceptibilidade magnética dc, conduzidas nas condições de resfriamento da amostra em campo zero (ZFC) e do resfriamento com o campo magnético aplicado (FC), indicaram que supercondutividade volumétrica é observada abaixo de ~ 5.8, 6.9, 7.0 K em amostras com x = 0.05, 0.08, e 0.10, respectivamente. Essas temperaturas críticas supercondutoras são bastante superiores àquela observada no Ta elementar ~ 4.45 K. Medidas de resistividade elétrica na presença de campos magnéticos aplicados de até 9 T confirmaram a temperatura crítica supercondutora das amostras estudadas. O campo crítico superior Hc2 e o comprimento de coerência E foram estimados a partir dos dados de magnetorresistência. Os valores estimados de Hc2 foram de ~ 0.46, 1.78, 3.85 e 3.97 T, resultando em valores de E ~ 26.0, 13.6, 9.2 e 9.1 nm para as ligas as cast com x = 0.00, 0.05, 0.08 e 0.10, respectivamente. A partir dos dados experimentais do calor específico Cp das ligas, magnitudes estimadas do salto em Cp nas vizinhanças das transições supercondutoras indicaram valores maiores que o previsto pela teoria BCS. Utilizando as equações analíticas derivadas da teoria do acoplamento forte da supercondutividade foi então proposto que o aumento da temperatura de transição supercondutora nas ligas devido a substituição parcial do Ta por Zr está intimamente relacionado ao aumento do acoplamento elétron-fônon, visto que a densidade de estados eletrônicos no nível de Fermi foi estimada ser essencialmente constante através da série Ta1-xZrx com x < 0.10.

Analyse des événements festifs et religieux dans le Petit Maghreb sous l'approche de la médiation

Travail dirigé présenté à la Faculté des études supérieures en vue de l'obtention du grade Maîtrise (M.Sc.) en criminologie option sécurité intérieure

Analyse des événements festifs et religieux dans le Petit Maghreb sous l'approche de la médiation

Travail dirigé présenté à la Faculté des études supérieures en vue de l'obtention du grade Maîtrise (M.Sc.) en criminologie option sécurité intérieure

Structural determinants of oligomerization of the aquaporin-4 channel

The aquaporins (AQP) family of integral membrane protein channels mediate cellular water and solute flow. Although qualitative and quantitative differences in channel permeability, selectivity, subcellular localization and trafficking responses have been observed for different members of the AQP family, the signature homotetrameric quaternary structure is conserved. Using a variety of biophysical techniques, we show that mutations to an intracellular loop (loop D) of human AQP4 reduce oligomerization. Non-tetrameric AQP4 mutants are unable to relocalize to the plasma membrane in response to changes in extracellular tonicity, despite equivalent constitutive surface expression levels and water permeability to wild-type AQP4. A network of AQP4 loop D hydrogen bonding interactions, identified using molecular dynamics simulations and based on a comparative mutagenic analysis of AQPs 1, 3 and 4, suggest that loop D interactions may provide a general structural framework for tetrameric assembly within the AQP family.

Functional surface chemistry of carbon-based nanostructures

The recently discovered abilities to synthesize single-walled carbon nanotubes and prepare single layer graphene have spurred interest in these sp2-bonded carbon nanostructures. In particular, studies of their potential use in electronic devices are many as silicon integrated circuits are encountering processing limitations, quantum effects, and thermal management issues due to rapid device scaling. Nanotube and graphene implementation in devices does come with significant hurdles itself. Among these issues are the ability to dope these materials and understanding what influences defects have on expected properties. Because these nanostructures are entirely all-surface, with every atom exposed to ambient, introduction of defects and doping by chemical means is expected to be an effective route for addressing these issues. Raman spectroscopy has been a proven characterization method for understanding vibrational and even electronic structure of graphene, nanotubes, and graphite, especially when combined with electrical measurements, due to a wealth of information contained in each spectrum. In Chapter 1, a discussion of the electronic structure of graphene is presented. This outlines the foundation for all sp2-bonded carbon electronic properties and is easily extended to carbon nanotubes. Motivation for why these materials are of interest is readily gained. Chapter 2 presents various synthesis/preparation methods for both nanotubes and graphene, discusses fabrication techniques for making devices, and describes characterization methods such as electrical measurements as well as static and time-resolved Raman spectroscopy. Chapter 3 outlines changes in the Raman spectra of individual metallic single-walled carbon nantoubes (SWNTs) upon sidewall covalent bond formation. It is observed that the initial degree of disorder has a strong influence on covalent sidewall functionalization which has implications on developing electronically selective covalent chemistries and assessing their selectivity in separating metallic and semiconducting SWNTs. Chapter 4 describes how optical phonon population extinction lifetime is affected by covalent functionalization and doping and includes discussions on static Raman linewidths. Increasing defect concentration is shown to decrease G-band phonon population lifetime and increase G-band linewidth. Doping only increases G-band linewidth, leaving non-equilibrium population decay rate unaffected. Phonon mediated electron scattering is especially strong in nanotubes making optical phonon decay of interest for device applications. Optical phonon decay also has implications on device thermal management. Chapter 5 treats doping of graphene showing ambient air can lead to inadvertent Fermi level shifts which exemplifies the sensitivity that sp2-bonded carbon nanostructures have to chemical doping through sidewall adsorption. Removal of this doping allows for an investigation of electron-phonon coupling dependence on temperature, also of interest for devices operating above room temperature. Finally, in Chapter 6, utilizing the information obtained in previous chapters, single carbon nanotube diodes are fabricated and characterized. Electrical performance shows these diodes are nearly ideal and photovoltaic response yields 1.4 nA and 205 mV of short circuit current and open circuit voltage from a single nanotube device. A summary and discussion of future directions in Chapter 7 concludes my work.

Screening for childhood lead poisoning in the industrial region of Fez, Morocco

International audience