Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices

We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V(F)), As the peak-valley ratio in the V(F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V(F) curves into consideration, gives a good agreement with the experimental results.

Current self-oscillation induced by a transverse magnetic field in a doped GaAs/AlAs superlattice

We investigate the influence of a transverse magnetic field on the current-voltage characteristics of a doped GaAs/AlAs superlattice at 1.6 K. The current transport regimes-stable electric field domain formation and current selfoscillation-are observed with increasing transverse magnetic field up to 13 T. Magnetic-field-induced redistribution of electron momentum and energy is identified as the mechanism triggering the switching over of one process to another lending to a change in the dependence of the effective electron drift velocity on electric field. Simulation yields excellent agreement with observed results.

High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides

We have shown that high energy ion implantation enhanced intermixing (HE-IIEI) technology for quantum well (QW) structures is a powerful technique which can be used to blue shift the band gap energy of a QW structure and therefore decrease its band gap absorption. Room temperature (RT) photoluminescence (PL) and guided-wave transmission measurements have been employed to investigate the amount of blue shift of the band gap energy of an intermixed QW structure and the reduction of band gap absorption, Record large blue shifts in PL peaks of 132 nm for a 4-QW InGaAs/InGaAsP/InP structure have been demonstrated in the intermixed regions of the QW wafers, on whose non-intermixed regions, a shift as small as 5 nm is observed. This feature makes this technology very attractive for selective intermixing in selected areas of an MQW structure. The dramatical reduction in band gap absorption for the InP based MQW structure has been investigated experimentally. It is found that the intensity attenuation for the blue shifted structure is decreased by 242.8 dB/cm for the TE mode and 119 dB/cm for the TM mode with respect to the control samples. Electro-absorption characteristics have also been clearly observed in the intermixed structure. Current-Voltage characteristics were employed to investigate the degradation of the p-n junction in the intermixed region. We have achieved a successful fabrication and operation of Y-junction optical switches (JOS) based on MQW semiconductor optical amplifiers using HE-IIEI technology to fabricate the low loss passive waveguide. (C) 1997 Published by Elsevier Science B.V.

Analysis of leakage current in GaAs micro-solar cell arrays

The output characteristics of micro-solar cell arrays are analyzed on the basis of a modified model in which the shunt resistance between cell lines results in current leakage. The modification mainly consists of adding a shunt resistor network to the traditional model. The obtained results agree well with the reported experimental results. The calculation results demonstrate that leakage current in substrate affects seriously the performance of GaAs micro- solar cell arrays. The performance of arrays can be improved by reducing the number of cells per line. In addition, at a certain level of integration, an appropriate space occupancy rate of the single cell is recommended for ensuring high open circuit voltages, and it is more appropriate to set the rates at 80%-90% through the calculation.

THIN-FILM BIPBSRCACUO DIRECT-CURRENT SUPERCONDUCTING QUANTUM INTERFERING DEVICES OPERATING AT 78-K

Direct current SQUIDs (superconducting quantum interference devices) have been successfully fabricated by using a Pb-doped BiSrCaCuO superconducting thin film made by mixed evaporation of a single source composed of related components with a resistance heater. The dc SQUID comprises a square washer with a small hole. These SQUIDs show perfectly periodic voltage-flux characteristics without magnetic shield, that is, typically, the flux noise and energy resolution at a frequency range from dc to 1 Hz and at 78 K being 1.7 x 10(-3) PHI-0/ square-root Hz and 3.6 x 10(-26) J/Hz, respectively. Meanwhile, we have found out that one of the SQUIDs still was able to operate on flux-locked mode without bias currents and showed voltage-flux second harmonic characteristics. This phenomenon is not well understood, but it may be related to I-V (current-voltage) characteristics of the dc SQUID.

Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications

A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio （PVCR） of 7. 57 and a peak current density Jp = 39.08kA/cm^2 under forward bias at room temperature. Under reverse bias, the corresponding values are 7.93 and 34.56kA/cm^2 . A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire. The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.

Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.

Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs

Homoepitaxial growth of4H-SiC on off-oriented Si-face （0001） 4H-SiC substrates was performed at 1500℃ by using the step controlled Epitaxy. Ti/4H-SiC Schottky barrier diodes （SBDs） with blocking voltage over lkV have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. The diode rectification ratio of forward to reverse （defined at ± 1V） is over 107 at room temperature and over 10^2 at 538K. Their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. The ideality factor and Schottky barrier height obtained at room temperature are 1.33 and 0. 905eV, respectively. The SBDs have on-state current density of 150A/cm^2 at a forward voltage drop of about 2.0V. The specific on-resistance for the rectifier is found to be as 7.9mΩ · cm^2 and its variation with temperature is T^2.0.

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized. The HEMT materials have a mobility of 1035cm~2/(V ? s) at sheet electron concentration of 1.0 * 10~(13)cm~(-2) at room temperature. For the de-vices fabricated using the malt-rials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic iransecmductance of IHfimS/mm are obtained on devices with gate length and width of l/-im and 80/im respectively. The f_t, unit-current-gain frequency of the devices,is about 18. 8GHz.

Ti Schottky barrier diodes on n-type 6H-SiC

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.

Volt-ampere characteristics, nozzle temperature and thruster performances in a low power argon arcjet

Argon gas with simple atomic structure and favorite arcing stability at low input power was used as the propellant. The thruster with a regeneratively cooled nozzle were tested in a vacuum system capable of keeping the chamber pressure at about 10 Pa at a propellant feeding rate of 5 slm. Arc current, arc voltage, thrust, nozzle temperature and propellant feeding rate were measured in situ simultaneously. Effects of the working parameters such as the propellant feeding rate and arc current on the thruster performances, mainly the produced thrust, specific impulse and thrust efficiency, were examined. The variation of arc volt-ampere characteristics with running time and the effect of nozzle temperature on thruster property are discussed.

Crystallographic and electrochemical characteristics of Ti45Zr35Ni13Pd7 melt-spun alloys

Ti45Zr35Ni13Pd7 alloys are prepared by melt spinning at different cooling rates (v). The phase structure and electrochemical hydrogen storage performance are investigated. When U is 10 m/s, the alloy consists of icosahedral quasicrystalline phase (I-phase), C14 Laves phase and a little amorphous phase. When v increases to 20 or 30 m/s, a mixed structure of I-phase and amorphous phase is formed. Maximum discharge capacity of alloy electrode decreases from 156 mAh/g (v = 10 m/s) to 139 mAh/g (v = 30 m/s) with increasing v. High-rate discharge ability at the discharge current density of 240 mA/g decreases monotonically from 61.2% (v = 10 m/s) to 56.8% (v = 30 m/s).

Effect of La/Ce ratio on the structure and electrochemical characteristics of La0.7-xCexMg0.3Ni2.8Co0.5 (x=0. 1-0.5) hydrogen storage alloys

The effect of La/Ce ratio on the structure and electrochemical characteristics of the La0.7-xCexMg0.3Ni2.8Co0.5 (x = 0.1, 0.2, 0.3, 0.4, 0.5) alloys has been studied systematically. The result of the Rietveld analyses shows that, except for small amount of impurity phases including LaNi and LaNi2, all these alloys mainly consist of two phases: the La(La, Mg)(2)Ni-9 phase with the rhombohedral PuNi3-type structure and the LaNi5 phase with the hexagonal CaCU5-type structure. The abundance of the La(La, Mg)(2)Ni-9 phase decreases with increasing cerium content whereas the LaNi5 phase increases with increasing Ce content, moreover, both the a and cell volumes of the two phases decrease with the increase of Ce content. The maximum discharge capacity decreases from 367.5 mAh g(-1) (x = 0.1) to 68.3 mAh g(-1) (x = 0.5) but the cycling life gradually improve. As the discharge current density is 1200 mA g(-1), the HRD increases from 55.4% (x = 0.1) to 67.5% (x = 0.3) and then decreases to 52.1% (x = 0.5). The cell volume reduction with increasing x is detrimental to hydrogen diffusion D and accordingly decreases the low temperature dischargeability of the La0.7-xCexMg0.3Ni2.8Co0.5 (x = 0.1-0.5) alloy electrodes.

Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes

Memory effects in single-layer organic light-emitting devices based on Sm3+, Gd3+, and Eu3+ rare earth complexes were realized. The device structure was indium-tin-oxide (ITO)/3,4-poly(ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT)/Poly(N-vinyl carbazole) (PVK): rare earth complex/LiF/Ca/Ag. It was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current-voltage characteristics by applying negative starting voltage, and more than 10(6) write-read-erase-reread cycles were achieved without degradation. Our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices.

Crystallographic and electrochemical characteristics of icosahedral quasicrysyalline Ti45-xZr35-xNi17+2xCu3 (x=0-8) powders

Ti45--xZr35--xNi17+2rCU3 (x=0, 2, 4, 6 and 8) icosahedral quasicrystalline phase (I-phase) alloy powders are synthesized by mechanical alloying and subsequent annealing techniques, and the crystallographic and electrochemical characteristics are investigated. The alloy powders are I-phase, and the quasi-lattice constant decreases with increasing x value. The maximum discharge capacity of the I-phase alloy electrodes first increases and then decreases with increasing x value, and the Ti39Zr26Ni29Cu3 I-phase electrode exhibits the highest discharge capacity of 274 mAh g(--1). The high-rate dischargeability at the discharge current density of 240mA g(--1) increases from 55.31 % (x= 0) to 74.24% (x= 8). Cycling stability also increases with increasing x value. The improvement in electrochemical characteristics may be ascribed to the added nickel, which not only improves the electrochemical activity, but also makes the alloy more resistant to oxidation.