Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes
Data(s) |
2006
|
---|---|
Resumo |
Memory effects in single-layer organic light-emitting devices based on Sm3+, Gd3+, and Eu3+ rare earth complexes were realized. The device structure was indium-tin-oxide (ITO)/3,4-poly(ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT)/Poly(N-vinyl carbazole) (PVK): rare earth complex/LiF/Ca/Ag. It was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current-voltage characteristics by applying negative starting voltage, and more than 10(6) write-read-erase-reread cycles were achieved without degradation. Our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Fang JF;You H;Chen JS;Lin J;Ma DG.Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes,INORGANIC CHEMISTRY,2006,45(9):3701-3704 |
Palavras-Chave | #DATA-STORAGE APPLICATIONS #CONJUGATED-POLYMER #ELECTRICAL BISTABILITY #NONVOLATILE MEMORY #EUROPIUM COMPLEX #CHARGE-TRANSFER #THIN-FILMS #CELLS #SYSTEM #DIODES |
Tipo |
期刊论文 |