Focused ion beam manufacturing of magnetic nanostructures

A number of patterning methods including conventional photo-lithography and E-beam lithography have been employed to pattern devices with critical dimensions of submicrometer levels. The methods of device fabrication by lithography and multilevel processing are usually specific to the chemical and physical properties of the etchants and materials used, and require a number of processing steps. As an alternative, focused ion beam (FIB) lithography is a unique and straightforward tool to rapidly develop nanomagnetic prototyping devices. This feature of FIB is critical to conduct the basic study necessary to advance the state-of-the-art in magnetic recording. ^ The dissertation develops a specific design of nanodevices and demonstrates FIB-fabricated stable and reproducible magnetic nanostructures with a critical dimension of about 10 nm. The project included the fabrication of a patterned single and multilayer magnetic media with areal densities beyond 10 Terabit/in 2. Each block had perpendicular or longitudinal magnetic anisotropy and a single domain structure. The purpose was to demonstrate how the ability of FIB to directly etch nanoscale patterns allowed exploring (even in the academic environment) the true physics of various types of nanostructures. ^ Another goal of this study was the investigation of FIB patterned magnetic media with a set of characterization tools: e.g. Spinstand Guzik V2002, magnetic force microscopy, scanning electron microscopy with energy dispersive system and wavelength dispersive system. ^ In the course of this work, a unique prototype of a record high density patterned magnetic media device capable of 10 terabit/in 2 was built. The read/write testing was performed by a Guzik spinstand. The readback signals were recorded and analyzed by a digital oscilloscope. A number of different configurations for writing and reading information from a magnetic medium were explored. The prototype transducers for this work were fabricated via FIB trimming of different magnetic recording heads. ^

Low resistivity Pt interconnects developed by electron beam assisted deposition using novel gas injector system

Electron beam-induced deposition (EBID) is a direct write process where an electron beam locally decomposes a precursor gas leaving behind non-volatile deposits. It is a fast and relatively in-expensive method designed to develop conductive (metal) or isolating (oxide) nanostructures. Unfortunately the EBID process results in deposition of metal nanostructures with relatively high resistivity because the gas precursors employed are hydrocarbon based. We have developed deposition protocols using novel gas-injector system (GIS) with a carbon free Pt precursor. Interconnect type structures were deposited on preformed metal architectures. The obtained structures were analysed by cross-sectional TEM and their electrical properties were analysed ex-situ using four point probe electrical tests. The results suggest that both the structural and electrical characteristics differ significantly from those of Pt interconnects deposited by conventional hydrocarbon based precursors, and show great promise for the development of low resistivity electrical contacts.

Yielding Behaviour of Electron Beam Lithography and Focused Ion Beam Made Nanocrystalline Micro/Nanopillars

Electron beam lithography (EBL) and focused ion beam (FIB) methods were developed in house to fabricate nanocrystalline nickel micro/nanopillars so to compare the effect of fabrication on plastic yielding. EBL was used to fabricate 3 μm and 5 μm thick poly-methyl methacrylate patterned substrates in which nickel pillars were grown by electroplating with height to diameter aspect ratios from 2:1 to 5:1. FIB milling was used to reduce larger grown pillars to sizes similar to EBL grown pillars. X-ray diffraction, electron back-scatter diffraction, scanning electron microscopy, and FIB imaging were used to characterize the nickel pillars. The measured grain size of the pillars was 91±23 nm, with strong <110> and weaker <111> and <110> crystallographic texture in the growth. Load-controlled compression tests were conducted using a MicroMaterials nano-indenter equipped with a 10 μm flat punch at constant rates from 0.0015 to 0.03 mN/s on EBL grown pillars, and 0.0015 and 0.015 mN/s on FIB-milled pillars. The measured Young’s modulus ranged from 55 to 350 GPa for all pillars, agreeing with values in the literature. EBL grown pillars exhibited stochastic strain-bursts at slow loading rates, attributed to local micro yield events, followed by work hardening. Sharp yield points were also observed and attributed to the gold seed layer de-bonding between the nickel pillar and substrate due to the shear stress associated with end effects that arise from the substrate constraint. The onset of yield ranged from 108 to 1800 MPa, which is greater than bulk nickel, but within values given in the literature. FIB-milled pillars demonstrated stochastic yield behaviour at all loading rates tested, yielding between 320 and 625 MPa. Deformation was apparent at FIB-milled pillar tops, where the smallest cross-sectional area was measured, but still exhibited superior yield strength to bulk nickel. The gallium damage at the outer surface of the pillars likely aids in dislocation nucleation and plasticity, leading to lower yield strengths than for the EBL pillars. Thermal drift, substrate effects, and noise due to vibrations within the indenter system contributed to variance and inconsistency in the data.

Nanostructuring Ferroelectrics via Focused Ion Beam Methodologies

As we reach the physical limit of Moore’s law and silicon based electronics, alternative schemes for memory and sensor devices are being proposed on
a regular basis. The properties of ferroelectric materials on the nanoscale are key to developing device applications of this intriguing material class, and nanostructuring has been readily pursued in recent times. Focused ion beam (FIB) microscopy is one of the most signi cant techniques for achieving
this. When applied in tandem with the imaging and nanoscale manipulation afforded by proximal scanning force microscopy tools, FIB-driven nanoscale characterization has demonstrated the power and ability which simply may not be possible by other fabrication techniques in the search for innovative and novel ferroic phenomena. At the same time the process is not without pitfalls; it is time-consuming and success is not always guaranteed thus often being the bane in progress. This balanced review explores a brief history of the relationship between the FIB and ferroelectrics, the fascinating properties it has unveiled, the challenges associated with FIB that have led to alterna- tive nanostructuring techniques and nally new ideas that should be explored using this exciting technique.

Energy Loss Function of Solids Assessed by Ion Beam Energy-Loss Measurements: Practical Application to Ta2O5

We present a study where the energy loss function of Ta2O5, initially derived in the optical limit for a limited region of excitation energies from reflection electron energy loss spectroscopy (REELS) measurements, was improved and extended to the whole momentum and energy excitation region through a suitable theoretical analysis using the Mermin dielectric function and requiring the fulfillment of physically motivated restrictions, such as the f- and KK-sum rules. The material stopping cross section (SCS) and energy-loss straggling measured for 300–2000 keV proton and 200–6000 keV helium ion beams by means of Rutherford backscattering spectrometry (RBS) were compared to the same quantities calculated in the dielectric framework, showing an excellent agreement, which is used to judge the reliability of the Ta2O5 energy loss function. Based on this assessment, we have also predicted the inelastic mean free path and the SCS of energetic electrons in Ta2O5.

离子辅助沉积中离子束流密度的作用

测量了End-Hall离子源在不同条件下的离子束流密度，在不同离子束流密度下进行了心离子辅助沉积ZrO2薄膜的实验，研究了离子束流密度对薄膜折射率、晶相的影响．根据动量传递模型分析了离子束流密度对薄膜折射率的作用；根据热尖峰理论证明了一定条件下离子束流密度不会影响薄膜晶体结构。

Control of polarization for a broadband dichroic filter at 45 degrees incidence

A method for the control of polarization for a broadband dichroic filter was reported and some design examples were elaborated. This method could be applied over a wide range of wavelengths and a wide range of polarizations in the transmission region. A nonpolaiizing broadband dichroic filter and a broadband dichroic filter with certain polarization were designed and fabricated by electron beam evaporation with ion beam assisted deposition. The experimental spectral performances showed good agreement with their theoretical curves. In addition, the application of the method was discussed. (c) 2007 Optical Society of America

阶段离子束辅助法制备基频减反膜

在研究阶段离子束辅助制备方式对薄膜性质影响的基础上,采用电子枪蒸发及离子束辅助沉积制备了氧化铪及氧化硅单层膜,采用阶段离子束辅助沉积及全程非离子束辅助沉积制备了基频减反膜。测量了所有样品的弱吸收、残余应力和激光损伤阈值。结果发现,相对电子枪热蒸发制备的样品,离子束辅助沉积的单层膜具有大的弱吸收、低的激光损伤阈值,且张应力减小,压应力增加;阶段离子束辅助沉积制备的减反膜剩余应力变小,弱吸收稍微增加,激光损伤阈值从10.91 J/cm^2增加到18 J/cm^2。分析表明,离子束辅助沉积在引入提高样品激光损伤

氧离子束辅助沉积氧化铪薄膜的激光损伤阈值研究

电子枪蒸发制备了氧化铪薄膜,对氧离子束辅助和未辅助两种情况下的样品进行了折射率、吸收、激光损伤阈值等属性的测试,结果表明,氧离子束辅助沉积的样品与未辅助沉积的样品相比具有高的折射率和高的吸收,以及稍低的激光损伤阈值.经过分析发现,薄膜的激光损伤阈值是影响薄膜抗激光特性的不利因素和有利因素竞争的结果,离子束辅助沉积技术在引入结构致密等有利因素的同时,也引入了吸收增加等不利因素.

离子束辅助反应制备的氧化铪薄膜特性

采用电子束直接蒸发氧化铪、无辅助电子束反应蒸发和离子束辅助反应蒸发金属铪3种沉积方式制备了单层HfO2薄膜,对样品的光学性能、结构特性以及激光损伤特性进行了研究。实验结果表明:通过反应沉积的方法可以有效减少缺陷产生并改善均匀性,施加离子辅助可以提高薄膜的折射率,在一定条件下还可以有效地降低吸收,但激光损伤阈值仍未达到直接采用氧化铪制备的水平;晶体结构方面,离子辅助条件下可以获得单斜相氧化铪薄膜,并且随着轰击能量的提高由(002)面的择优取向向(-111)面转变。

离子束辅助沉积制备高功率激光薄膜的研究

综述了离子束辅助沉积技术在高功率激光薄膜制备中的应用研究进展。指出该技术在制备高激光损伤阈值的薄膜中存在的问题,即出现过高的堆积密度,会给薄膜带来杂质缺陷、化学计量比缺陷、损伤缺陷、晶界缺陷,制备薄膜的残余应力存在着压应力增加的趋势,会改变薄膜的晶体结构等。并指出了该研究领域的研究方向。

Benefits of current percolation in superconducting coated conductors

The critical currents of coated conductors fabricated by metal-organic deposition (MOD) on rolling-assisted biaxially textured substrates (RABiTS) and by pulsed laser deposition (PLD) on ion-beam assisted deposition (IBAD) templates have been measured as a function of magnetic field orientation and compared to films grown on single crystal substrates. By varying the orientation of magnetic field applied in the plane of the film, we are able to determine the extent to which current flow in each type of conductor is percolative. Standard MOD/RABiTS conductors have also been compared to samples whose grain boundaries have been doped by diffusing Ca from an overlayer. We find that undoped MOD/RABiTS tapes have a less anisotropic in-plane field dependence than PLD/IBAD tapes and that the uniformity of critical current as a function of in-plane field angle is greater for MOD/RABiTS samples doped with Ca. (C) 2005 American Institute of Physics.

Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)

Cubic boron nitride (c-BN) films were deposited on Si(001) substrates in an ion beam assisted deposition (IBAD) system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and a well defined parameter space can be established by using the P/a-parameter. The refractive index of BN films keeps a constant of 1.8 for the c-BN content lower than 50%, while for c-BN films with higher cubic phase the refractive index increases with the c-BN content from 1.8 at chi(c) = 50% to 2.1 at chi(c) = 90%. Furthermore, the relationship between n and rho for BN films can be described by the Anderson-Schreiber equation, and the overlap field parameter gamma is determined to be 2.05.

Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.