Measurement-Integrated simulations and Kalman filter applied to a co-flowing jet

This paper deals with the experimental evaluation of a flow analysis system based on the integration between an under-resolved Navier-Stokes simulation and experimental measurements with the mechanism of feedback (referred to as Measurement-Integrated simulation), applied to the case of a planar turbulent co-flowing jet. The experiments are performed with inner-to-outer-jet velocity ratio around 2 and the Reynolds number based on the inner-jet heights about 10000. The measurement system is a high-speed PIV, which provides time-resolved data of the flow-field, on a field of view which extends to 20 jet heights downstream the jet outlet. The experimental data can thus be used both for providing the feedback data for the simulations and for validation of the MI-simulations over a wide region. The effect of reduced data-rate and spatial extent of the feedback (i.e. measurements are not available at each simulation time-step or discretization point) was investigated. At first simulations were run with full information in order to obtain an upper limit of the MI-simulations performance. The results show the potential of this methodology of reproducing first and second order statistics of the turbulent flow with good accuracy. Then, to deal with the reduced data different feedback strategies were tested. It was found that for small data-rate reduction the results are basically equivalent to the case of full-information feedback but as the feedback data-rate is reduced further the error increases and tend to be localized in regions of high turbulent activity. Moreover, it is found that the spatial distribution of the error looks qualitatively different for different feedback strategies. Feedback gain distributions calculated by optimal control theory are presented and proposed as a mean to make it possible to perform MI-simulations based on localized measurements only. So far, we have not been able to low error between measurements and simulations by using these gain distributions.

Comprehensive Property Retrieval and Measurement of Concrete Spalling Using Machine Vision for Post-Earthquake Safety Assessments

Active vibration control (AVC) is a relatively new technology for the mitigation of annoying human-induced vibrations in floors. However, recent technological developments have demonstrated its great potential application in this field. Despite this, when a floor is found to have problematic floor vibrations after construction the unfamiliar technology of AVC is usually avoided in favour of more common techniques, such as Tuned Mass Dampers (TMDs) which have a proven track record of successful application, particularly for footbridges and staircases. This study aims to investigate the advantages and disadvantages that AVC has, when compared with TMDs, for the application of mitigation of pedestrian-induced floor vibrations in offices. Simulations are performed using the results from a finite element model of a typical office layout that has a high vibration response level. The vibration problems on this floor are then alleviated through the use of both AVC and TMDs and the results of each mitigation configuration compared. The results of this study will enable a more informed decision to be made by building owners and structural engineers regarding suitable technologies for reducing floor vibrations.

Intergranular and intragranular properties of superconducting multifilamentary Bi 2223 Ag tapes : comparison of electrical transport and magnetic measurement methods

Several experimental techniques have been used in order to characterize the properties of multifilamentary Bi-2223 / Ag tapes. Pristine samples were investigated by electrical resistivity, current-voltage characteristics and DC magnetic moment measurements. Much emphasis is placed on comparing transport (direct) and magnetic (indirect) methods for determining the critical current density as well as the irreversibility line and resolving usual lacks of consistency due to the difference in measurement techniques and data analysis. The effect of an applied magnetic field, with various strengths and directions, is also studied and discussed. Next, the same combination of experiments was performed on bent tapes in order to bring out relevant information regarding the intergranular coupling. A modified Brandt model taking into account different types of defects within the superconducting filaments is proposed to reconciliate magnetic and transport data.

High resolution direct measurement of temperature distribution in silicon nanophotonics devices.

Following the miniaturization of photonic devices and the increase in data rates, the issues of self heating and heat removal in active nanophotonic devices should be considered and studied in more details. In this paper we use the approach of Scanning Thermal Microscopy (SThM) to obtain an image of the temperature field of a silicon micro ring resonator with sub-micron spatial resolution. The temperature rise in the device is a result of self heating which is caused by free carrier absorption in the doped silicon. The temperature is measured locally and directly using a temperature sensitive AFM probe. We show that this local temperature measurement is feasible in the photonic device despite the perturbation that is introduced by the probe. Using the above method we observed a significant self heating of about 10 degrees within the device.

Effects of external magnetic field on the effective g factor of (Ga,Mn)As

With the help of time resolved magneto-optic Kerr rotation measurements, the optically induced spin precession in heavily doped diluted magnetic semiconductor Ga0.937Mn0.063 As was observed. It was found that the effective g factor increases with increasing magnetic field, which is attributed to the magnetic-field-induced increase of the density of the non-localized holes. Those free holes will couple with the localized magnetic ions by p-d interactions, leading to the formation of spontaneous magnetization in Ga0.937Mn0.063As, which in turn to the enhancement of the effective g factor.

The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates

Si-doped nonpolar a-plane GaN films were grown on nanopatterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and field emission measurement. The XRD analysis shows that the sample is a nonpolar a-plane (11 (2) over bar0) GaN film. The field emission measurement shows that the nonpolar GaN films exhibit excellent field emission properties with a threshold emission field of as low as 10 V/mu m at a current density of 0.63 mu A/cm(2), and a high field emission current density of 74 mA/cm(2) at an applied field of 24 V/mu m. Moreover, the Fowler-Nordheirn plot of the sample fits a near linear relation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure

An effective method is developed to fabricate metallic microcircuits in diamond anvil cell (DAC) for resistivity measurement under high pressure. The resistivity of nanocrystal ZnS is measured under high pressure up to 36.4 GPa by using designed DAC. The reversibility and hysteresis of the phase transition are observed. The experimental data is confirmed by an electric current field analysis accurately. The method used here can also be used under both ultrahigh pressure and high temperature conditions.

Experimental study of mode field evolution of dual-core photonic crystal fiber

The accurate mode field profile of high negative dispersion dual-core photonic crystal fiber (DCPCF) is measured. The mode field evolution of DCPCF with wavelength is studied experimentally for the first time. The measurement result shows that no individual inner core mode or outer core mode exists, but two modes coexist simultaneously, and either one of them is dominant. The mode field evolution versus wavelength indicates that the wavelength range where the modes coupling takes place between inner core and outer core is broader than that of theoretical design.

Thermal entanglement in a two-spin-qutrit system under a nonuniform external magnetic field

The thermal entanglement in a two-spin-qutrit system with two spins coupled by exchange interaction under a magnetic field in an arbitrary direction is investigated. Negativity, the measurement of entanglement is calculated. We find that for any temperature the evolvement of negativity is symmetric with respect to magnetic field. The behavior of negativity is presented for four different cases. The results show that for different temperature; different magnetic field give maximum entanglement. Both the parallel and antiparallel magnetic field cases are investigated qualitatively (not quantitatively) in detail, we find that the entanglement may be enhanced under an antiparallel magnetic field.

Refractive index dispersion measurement on nonlinear optical polymer using V-prism refractometer

By using V-prism refractometer, the refractive indices of a polyetherketone (PEK-c) guest-host polymer system were measured with the polymer in solutions. The Lorenz-Lorentz local field formalism was used in the calculation of the refractive indices of the polymers from the measured indices of the polymer solutions and the pure solvent by using V-prism refractometer. The refractive index dispersions of the polymers were obtained by fitting the measured indices of the polymers to Sellmeyer equation. The method allows for an accuracy in index of 0.7% in the determination of the polymer indices. In addition, a large difference between the indices of the polymer and the solvent, and a higher polymer volume fraction in the measured polymer solution are favorable for a high accuracy. (C) 2000 Elsevier Science Ltd. All rights reserved.

Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors

Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence of InAs/GaAs self-assembled quantum dot (SAQD) is at 1.265 mu m at 300 K. The temperature-dependence of the abnormal redshift of InAs SAQD wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the InAs quantum dot. According to the electrical measurement, high electric field current-voltage characteristic of the MODFET device were obtained. The embedded InAs QD of the samples can be regard as scattering centers to the vicinity of the channel electrons. The transport property of the electrons in GaAs channel will be modulated by the QD due to the Coulomb interaction. It has been proposed that a MODFET embedded with InAs QDs presents a novel type of field effect photon detector.

Twin Markovian field correlation on four-level attosecond polarization beats

Based on the phase-conjugate polarization interference between two two-photon processes, we obtained an analytic closed form for the second-order or fourth-order Markovian stochastic correlation of the four-level attosecond sum-frequency polarization beat (FASPB) in the extremely Doppler-broadened limit. The homodyne-detected FASPB signal is shown to be particularly sensitive to the statistical properties of the Markovian stochastic light fields with arbitrary bandwidth. The different roles of the amplitude fluctuations and the phase fluctuations can be understood physically in the time-domain picture. The field correlation has a weak influence on the FASPB signal when the laser has narrow bandwidth. In contrast, when the laser has broadband linewidth, the FASPB signal shows resonant-nonresonant cross-correlation, and drastic difference for three Markovian stochastic fields. The maxima of the two two-photon signals are shifted from zero time delay to the opposite direction, and the signal exhibits damping oscillation when the laser frequency is off-resonant from the two-photon transition. A Doppler-free precision in the measurement of the energy-level sum can be achieved with an arbitrary bandwidth. As an attosecond ultrafast modulation process, it can be extended intrinsically to any sum frequency of energy levels.

BACKGATING AND LIGHT SENSITIVITY IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Three different types of GaAs metal-semiconductor field effect transistors (MESFET) by employing ion implantation, molecular beam epitaxy (MBE) and low-temperature MBE (LT MBE) techniques respectively were fabricated and studied in detail. The backgating (sidegating) measurement in the dark and in the light were carried out. For the LT MBE-GaAs buffered MESFETs, the output resistance R(d) and the peak transconductance g(m) were measured to be above 50 k Omega and 140 mS/mm, respectively, and the backgating and light sensitivity were eliminated. A theoretical model describing the light sensitivity in these kinds of devices is given. and good agreement with experimental data is reached.

Impacts of the embedded windings to the field quality of dipole

Cooler Storage Ring (CSR) of Heavy Ion Research Facility in Lanzhou (HIRFL) consists of a main ring (CSRm) and an experimental ring (CSRe). Two particular C-type dipoles with embedded windings are used in the injection beam line of CSRm. They also act as the prototype dipoles of CSRe. The windings are designed to improve the field quality by their trimming current. The current impacts on field homogeneity and multipole components are investigated by a hall sensor and a long coil, respectively. The experiment shows that a field homogeneity of +/- 1.0 x 10(-3) can be reached by adjusting the trimming currents, though the multipole components change correspondingly. In our case, the quadrupole component is decreased to a low level with the octupole, decapole and 12-pole ones increased slightly when the trimming current is optimized.

High sensitivity beam phase measurement system for isochronous cyclotron

The beam phase measurement system in the HIRFL is introduced. Based on the double-balanced mixer principle using rf-signal mixing and filtering techniques, a stable and sensitive phase measurement system has been developed. The phase history of the ion beam is detected by using a set of capacitive pick-up probes installed in the cyclotron. The phase information of the measurement is necessary for tuning to obtain a optimized isochronous magnetic field which induces to maximize the beam intensity and to optimize the beam quality. The result of the phase measurement is reliable and the accurancy reaches +/- 0.5 degrees.