Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates

The formation of triangular-shaped dot-like (TD) structures grown by molecular beam epitaxy on GaAs (311)A substrates patterned with square- and triangular-shaped holes is compared. On substrates patterned with square-shaped holes, TD structures are formed via the pinch-off of two symmetrically arranged {111} planes which develop freely in the regions between the holes on the original substrate surface, while the (111)A sidewalls of the as-etched holes develop a rough morphology during growth. The evolution of the rough ( 1 1 1)A sidewalls is eliminated on substrates patterned with triangular shaped holes resulting in similar TD structures with highly improved uniformity over the entire pattern. Spectrally and spatially resolved cathodoluminescence spectroscopy reveals the lateral variation of the quantum-well confinement energy in the TD structures generating distinct lateral energy barriers between the top portion and the nearby smooth regions with efficient radiative recombination. Formation of TD structures provides a new approach Do fabricate three-dimensionally confined nanostructures in a controlled manner.

Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires

Quantum-confined Stark effects are investigated theoretically in GaAs/AlxGa1-xAs quantum wires formed in V-grooved structures. The electronic structures of the V-shaped quantum wires are calculated within the effective mass envelope function theory in the presence of electric field. The binding energies of excitons are also studied by two-dimensional Fourier transformation and variational method. The blue Stark shifts are found when the electric field is applied in the growth direction. A possible mechanism in which the blueshifts of photoluminescence peaks are attributed to two factors, one factor comes from the asymmetric structure of quantum wire along the electric field and another factor arises from the electric-field-induced change of the Coulomb interaction. The numerical results are compared with the recent experiment measurement.

Effect of reflectivity at the interface of oxide layer on transverse mode control in oxide confined vertical-cavity surface-emitting lasers

The transverse mode control in oxide confined vertical-cavity surface-emitting lasers is discussed by modeling the dielectric aperture as a uniform waveguide and an extra reflectivity at the oxide layer. The phase of the extra reflectivity and the refractive index step can be adjusted to change the mode threshold gain. We calculate the lateral refractive index step from the mode wavelength difference between aperture and perimeter modes, and compare it with that obtained from the weighted average index. The mode reflectivity in terms of the lateral optical confinement factor at the oxide layer is considered in calculating the threshold gain for transverse modes. The numerical results show that higher transverse modes can be suppressed by adjusting the position of a thin AlAs-oxide layer inside a three-quarter-wave layer in the distributed Bragg reflector. (C) 1998 American Institute of Physics. [S0021-8979(98)04007-9].

Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm(2), differential resistance of 76 Omega, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 mu m at room temperature (RT). L-I-V characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent L-I characteristics and modulation response of the dielectric-free VCSEL are also presented.

Phase equilibria and plate-fluid interfacial tensions for associating hard sphere fluids confined in slit pores

The excess Helmholtz free energy functional for associating hard sphere fluid is formulated by using a modified fundamental measure theory [Y. X. Yu and J. Z. Wu, J. Chem. Phys. 117, 10156 (2002)]. Within the framework of density functional theory, the thermodynamic properties including phase equilibria for both molecules and monomers, equilibrium plate-fluid interfacial tensions and isotherms of excess adsorption, average molecule density, average monomer density, and plate-fluid interfacial tension for four-site associating hard sphere fluids confined in slit pores are investigated. The phase equilibria inside the hard slit pores and attractive slit pores are determined according to the requirement that temperature, chemical potential, and grand potential in coexistence phases should be equal and the plate-fluid interfacial tensions at equilibrium states are predicted consequently. The influences of association energy, fluid-solid interaction, and pore width on phase equilibria and equilibrium plate-fluid interfacial tensions are discussed.

EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD

We consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. Depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in well centre and change the direct intersubband gaps into indirect ones. These effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices.

LO-PHONON-ASSISTED TUNNELING IN ASYMMETRIC DOUBLE-WELL STRUCTURES WITH THICK BARRIERS

Nonresonant electron tunneling between asymmetric double quantum wells in AlxGa1-xAs/GaAs systems has been investigated by using steady-state and time-resolved photoluminescence spectra. Experimental evidence of LO-phonon-assisted tunneling through thick barriers has been obtained by enhancing excitation power densities or applying electric fields perpendicular to the well plane. LO-phonon-assisted tunneling times have also been estimated from the variation of the decay time of the narrow-well photoluminescence with applied electric fields. Our findings suggest that LO phonons in the barriers play an important role in the tunneling transfer.

SOME ASPECTS ON INTERFACE MODES AND LO EIGENMODES IN GAAS/ALAS QUANTUM-WELLS

The interface modes and LO phonon modes in GaAs/AlAs quantum wells is investigated within the isotropic dispersionless dielectric continuum with nodes in displacement u at the interfaces as boundary condition. The interface modes are found to be purely interface polarization charge effect while LO eigenmodes induce only bulk polarization charges. Analytical expression is determined for LO eigenmodes and is found in good agreement with realistic model calculation, and its labeling index is interpreted as the helicity of electric field as it travels from one side to the other side of the slab.

Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface

We report on high magnetic fields (up to 40 T) cyclotron resonance, quantum Hall effect and Shubnikov-de-Hass measurements in high frequency transistors based on Si-doped GaN-AlGaN heterojunctions. A simple way of precise modelling of the cyclotron absorption in these heterojunctions is presented, We clearly establish two-dimensional electrons to be the dominant conducting carriers and determine precisely their in-plane effective mass to be 0.230 +/- 0.005 of the free electron effective mass. The increase of the effective mass with an increase of two-dimensional carrier density is observed and explained by the nonparabolicity effect. (C) 1997 American Institute of Physics.

GaMnAs合金中等离子体激元-LO声子耦合模的拉曼光谱研究

理论分析了两种阻尼条件下重掺杂GaAs中的等离子体激元-LO声子耦合模，证实在小阻尼条件下耦合模的拉曼谱分为两支，而在大阻尼条件下只有一个耦合模可以被观测到。推导得到了只出现一个耦合模所需的最小阻尼的解析表达式。测量了Mn组分从2．6％到9％的GaMnAs合金的拉曼光谱。利用等离子体激元-LO声子耦合模理论进行了谱形拟合，得到了所测的GaMnAs合金中的空穴浓度。

Crystallization Behaviors of n-Octadecane in Confined Space: Crossover of Rotator Phase from Transient to Metastable Induced by Surface Freezing

In this paper, the confined crystallization and phase transition behaviors of n-octadecane in microcapsules with a diameter of about 3 Pm were studied with the combination of differential scanning calorimetry (DSC), temperature dependent Fourier transform infrared spectroscopy (FTIR), and X-ray diffraction (XRD).

Effect of polydispersity on the self-assembly structure of diblock copolymers under various confined states: A Monte Carlo study

We studied the self-assembly of polydisperse diblock copolymers under various confined states by Monte Carlo simulation. When the copolymers were confined within two parallel walls, it was found that the ordered strip structures appeared alternately with the increase in wall width. Moreover, the wall width at which the ordered structure appeared tended to increase with an increase in the polydispersity index (PDI). On the other hand, the simulation results showed that the copolymers were likely to form ordered concentric strip structures when they were confined within a circle wall.