Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation

Oxidation of amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition were investigated. Their hydrogen content has a great influence on the oxidation rate at low temperature. When the mass gain is recorded during a heating ramp in dry air, an oxidation process at low temperature is identified with an onset around 250°C. This temperature onset is similar to that of hydrogen desorption. It is shown that the oxygen uptake during this process almost equals the number of hydrogen atoms present in the nanoparticles. To explain this correlation, we propose that oxidation at low temperature is triggered by the process of hydrogen desorption

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon

Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon

A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si

The release of silicon from amorphous silica and rice straw in Sri Lankan soils

Silicon release from rice straw and amorphous silica when shaken in solution with five Sri Lankan soils was studied indirectly using sorption isotherms and changes in concentration and directly using straw in dialysis bags examined using electron microscopy. The aim was to further our understanding of the processes and factors affecting the release of straw-Si in soils and its availability to rice. The soils (alfisols and ultisols) shaken with 0.1 M NaCl (5 g per 125 mL for 250 days) produced concentrations of 1 - 4 mg L-1 of monosilicic acid-Si. Amorphous silica added to these suspensions (36.5 mg, containing 17 mg Si) raised the concentrations to 20 - 40 mg L-1, and added rice straw (0.5 g, containing 17 mg Si) gave 10 - 25 mg L-1. Sorption isotherms (7 days equilibrations) were used to calculate from the concentrations the amounts of Si released ( 24 - 38% and 8 - 21%, respectively). Both materials gave about 40 mg L-1 of monosilicic acid-Si plus 30 mg L-1 of disilicic acid-Si when shaken in solution alone (5 g per 125 mL). Straw in dialysis bags ( 0.5 g per 25 mL in 0.1 M NaCl) was shaken in soil suspension ( 5 g per 100 mL) for 60 days. Similar concentrations and releases were measured to those obtained above. About one fifth of the mass of straw was lost by decomposition in the first 15 days. A chloroform treatment prevented decomposition, but Si release was unaffected. Disintegration continued throughout the experiments, with phytoliths being exposed and dissolved. Compared to the rate of release from straw into solution without soil, the release of Si into soil suspensions was increased during the first 20 days by adsorption on the soil, but was then reduced probably through the effect of Fe and Al on the phytolith surfaces. The extent of this blocking effect varied between soils and was not simply related to soil pH.

The release of silicon from amorphous silica and rice straw in Sri Lankan soils

Silicon release from rice straw and amorphous silica when shaken in solution with five Sri Lankan soils was studied indirectly using sorption isotherms and changes in concentration and directly using straw in dialysis bags examined using electron microscopy. The aim was to further our understanding of the processes and factors affecting the release of straw-Si in soils and its availability to rice. The soils (alfisols and ultisols) shaken with 0.1 M NaCl (5 g per 125 mL for 250 days) produced concentrations of 1 - 4 mg L-1 of monosilicic acid-Si. Amorphous silica added to these suspensions (36.5 mg, containing 17 mg Si) raised the concentrations to 20 - 40 mg L-1, and added rice straw (0.5 g, containing 17 mg Si) gave 10 - 25 mg L-1. Sorption isotherms (7 days equilibrations) were used to calculate from the concentrations the amounts of Si released ( 24 - 38% and 8 - 21%, respectively). Both materials gave about 40 mg L-1 of monosilicic acid-Si plus 30 mg L-1 of disilicic acid-Si when shaken in solution alone (5 g per 125 mL). Straw in dialysis bags ( 0.5 g per 25 mL in 0.1 M NaCl) was shaken in soil suspension ( 5 g per 100 mL) for 60 days. Similar concentrations and releases were measured to those obtained above. About one fifth of the mass of straw was lost by decomposition in the first 15 days. A chloroform treatment prevented decomposition, but Si release was unaffected. Disintegration continued throughout the experiments, with phytoliths being exposed and dissolved. Compared to the rate of release from straw into solution without soil, the release of Si into soil suspensions was increased during the first 20 days by adsorption on the soil, but was then reduced probably through the effect of Fe and Al on the phytolith surfaces. The extent of this blocking effect varied between soils and was not simply related to soil pH.

Building integration photovoltaic module with reference to Ghana: using triple junction amorphous silicon

This paper assesses the potential for using building integrated photovoltaic (BIPV) roof shingles made from triple-junction amorphous silicon (3a-Si) for electrification and as a roofing material in tropical countries, such as Accra, Ghana. A model roof was constructed using triple-junction amorphous (3a-Si) PV on one section and conventional roofing tiles on the other. The performance of the PV module and tiles were measured, over a range of ambient temperatures and solar irradiance. PVSyst (a computer design software) was used to determine the most appropriate angle of tilt. It was observed that 3a-Si performs well in conditions such as Accra, because it is insensitive to high temperatures. Building integration gives security benefits, and reduces construction costs and embodied energy, compared to freestanding PV systems. Again, it serves as a means of protection from salt spray from the oceans and works well even when shaded. However, compared to conventional roofing materials, 3a-Si would increase the indoor temperature by 1-2 °C depending on the surface area of the roof covered with the PV modules. The results presented in this research enhance the understanding of varying factors involved in the selection of an appropriate method of PV installation to offset the short falls of the conventional roofing material in Ghana.

Estudo do efeito inibidor do solicato de sódio na corrosão de uma liga de ali-mg-si, em meio de diferentes concentrações de cloreto

No presente trabalho, estudou-se o efeito inibidor do silicato de sódio na corrosão de uma liga de AI-Mg-Si em meio arejado e desarejado, contendo quantidades variadas de Ion cloreto no pW = 10,O . Nos diferentes tipos de ensaios realizados, tais como, traçado de curvas de polarização, ensaios galvanostáticos e com par galvânico, utilizou-se corpos de prova anodizados ou polidos. Os resultados experimentais mostraram que 1 g/l de silicato de sódio neutro de composição Na2O : 3.3 SiO2, demonstrou total efeito inibidor da corrosão da liga de A1-Mg-Si, em solução contendo até 60 p.p.m. de NaC1. Em concentrações de 1060 p.p,m. e maiores de NaC1, o silicato mostrou apenas efeito retardador da corrosão, com diminuição da incidência de pites. A análise dos produtos de corrosão, formadas sobre a superficie dos pites, feita usando-se raio-X e espectroscopia de infravermelho, mostrou que esses produtos têm estrutura amorfa e contêm silicato e grupos hidroxila. Finalmente, medidas de capacitância da dupla camada, confirmaram a existência de uma película que se forma sobre a superfície da liga de alumínio, quando em solução de silicato.

Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation

Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17) cm(-2) dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17) cm(-2) dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65% and 35% for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV) showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17) cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Structural Evaluation of Mechanically Alloyed and Heat-Treated Ti-25at-%Si Powders

This work discusses on the structural evaluation of mechanically alloyed and heat-treated Ti-25at%Si powders. The milling process was conducted in a planetary ball mill using stainless steel balls/vials, 200 rpm and ball-to-powder weight ratio of 5:1, whereas the heat treatment was conducted under Ar atmosphere at 1100 C for 4 h. Samples were characterized by X-ray diffraction, differential scanning calorimetry, scanning electron microscopy and energy dispersive spectrometry. The Si peaks disappeared after milling for 30h, indicating that the Si atoms were dissolved into the Ti lattice in order to form an extended solid solution. The Ti peaks were broadened and their intensities reduced for longer milling times whereas a halo was formed in Ti-25Si powders milled for 200h suggesting that an amorphous structure was achieved. The crystallite size was decreased with increasing milling times. A large Ti3Si amount was found in mechanically alloyed Ti-25at%Si powders after heating at 1100 degrees C for 4h.

Characterization of amorphous niobium silicates powders synthesized by polymeric precursor method

In this paper 4.5SiO(2)-3Al(2)O(3-x)Nb(2)O(5)-2CaO powders have been synthesized using a chemical process the Polymeric Precursor Method. The process of glass formation has been investigated by XRD and DTA, the results confirm that the prepared powders are glasses. Experimental data show that amount of Nb2O5 had a considerable effect on the T-g values. The structures of glasses prepared. have been determined by Si-29 and Al-27 MAS NMR and the results indicated that the network is formed by SiO4 and AlO4 tetrahedral linked and probably Si-O-Nb bonds are present in the vitreous network. (C) 2005 Elsevier B.V. All rights reserved.

Photoluminescence in amorphous (PbLa)TiO3 thin films deposited on different substrates

Pb1-XLaXTiO3 thin films, (X = 0.0; 13 and 0.27 mol%) were prepared by the polymeric precursor method. Thin films were deposited on Pt/Ti/SiO2/Si (1 1 1), Si (1 0 0) and glass substrates by spin coating, and annealed in the 200-300degreesC range in an O-2 atmosphere. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used for the microstructural characterization of the thin films. Photoluminescence (PL) at room temperature has been observed in thin films of (PbLa)TiO3. The films deposited on Pt/Ti/SiO2/Si substrates present PL intensity greater than those deposited on glass and silicon substrates. The intensity of PL in these thin films was found to be dependent on the thermal treatment and lanthanum molar concentration. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Characterization of Si : O : C : H films fabricated using electron emission enhanced chemical vapour deposition

Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (Vs) and of the proportion of TEOS in the mixture (XT) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on Vs and XT are presented. (c) 2007 Elsevier B.V. All rights reserved.

Diverse Amorphous Carbonaceous Thin Films Obtained by Plasma Enhanced Chemical Vapor Deposition and Plasma Immersion Ion Implantation and Deposition

Diverse amorphous hydrogenated carbon and similar films containing additional elements were produced by Plasma Enhanced Chemical Vapor Deposition (PECVD) and by Plasma Immersion Ion Implantation and Deposition (PIIID). Thus a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:O:Si were obtained, starting from the same feed gases, using both techniques. The same deposition system supplied with radiofrequency (RF) power was used to produce all the films. A cylindrical stainless steel chamber equipped with circular electrodes mounted horizontally was employed. RF power was fed to the upper electrode; substrates were placed on the lower electrode. For PIIID negative high tension pulses were also applied to the lower electrode. Raman spectroscopy confirmed that all the films are amorphous. Chemical characterization of each pair of films was undertaken using Infrared Reflection Absorption Spectroscopy and X-ray Photoelectron Spectroscopy. The former revealed the presence of specific structures, such as C-H, C-O, O-H. The latter allowed calculation of the ratio of hetero-atoms to carbon atoms in the films, e. g. F:C, N:C, and Si:C. Only relatively small differences in elemental composition were detected between films produced by the two methods. The deposition rate in PIIID is generally reduced in relation to that of PECVD; for a-C:H:Cl films the reduction factor is almost four.

Microstructure and phase evolution of SrTiO3 thin films on Si prepared by the use of polymeric precursors

The use of polymeric precursors was employed in preparing SrTiO3 thin films by dip coating using Si (111) as substrate. Crack free films were obtained after sintering at temperatures ranging from 550 to 1000°C. The microstructure, characterized by SEM, shows the development of dense polycrystalline films with smooth surface and mean grain size of 52 nm, for films sintered at 1000°C. Grazing incident angle XRD characterization of these films shows that the SrTiO3 phase crystallizes from an inorganic amorphous matrix. No intermediate crystalline phase was identified.

Crystallization of amorphous GaAs films prepared onto different substrates

This work reports changes in structural properties produced by thermal annealing of flash evaporated amorphous GaAs films using the micro-Raman scattering and the X-ray diffraction (XRD) techniques. Films of about 1 μm were grown on c-Si and glass substrates. The crystallization process is less effective for samples deposited on c-Si. This could be due to the ordering in the first layers of the film imposed by the oriented Si substrates. We propose that this ordering makes the growth of crystallites in these films more restrained than the growth occurring in the completely amorphous films on glass substrates. © 2002 Elsevier Science B.V. All rights reserved.