Synthesis and characterization of room-temperature ferromagnetism in Fe- and Ni-co-doped In2O3

Observation of room-temperature ferromagnetisin in Fe- and Ni-co-doped In2O3 samples (In0.9Fe0.1-xNix)(2)O-3 (0 <= x <= 0.1) prepared by citric acid sol-gel auto-igniting method is reported. All of the samples with intermediate x values are ferromagnetic at roomtemperature. The highest saturation magnetization (0.453 mu B/Fe + Ni ions) moment is reached in the sample with x = 0.04. The highest solubility of Fe and Ni ions in the In2O3 lattice is around 10 and 4 at%, respectively. The 10 at% Fe-doped sample is found to be weakly ferromagnetic, while the 10at% Ni-doped sample is paramagnetic. Extensive structure including Extended X-ray absorption fine structure (EXAFS), magnetic and magneto-transport including Hall effects studies on the samples indicate the observed ferromagnetism is intrinsic rather than from the secondary impurity phases. (c) 2007 Elsevier Ltd. All rights reserved.

拟南芥AST基因的精细作图

拟南芥ast (anthocyanin spotted testa) 突变体是由碳离子束诱导产生的与花青苷生物合成有关的突变体，受单隐性核基因控制。由于花青苷的异常积累，突变体未成熟种子的种皮呈现紫红色的斑点;野生型植株幼嫩的种皮没有花青苷的异常积累，呈淡绿色。初步作图分析表明，AST基因定位于拟南芥第I号染色体上，并且位于SSLP分子标记nga280和CAPS分子标记PAB5之间。 AST基因与SSLP分子标记nga280紧密连锁，遗传距离为3.2cM;与CAPS分子标记PAB5相距较远，遗传距离为21.1cM。 采用DDRT-PCR的策略，分析野生型与突变型植株未成熟角果中基因表达的差异。通过调整DDRT-PCR中总RNA、锚定引物、随机引物、cDNA和dNTP等关键试剂的用量，优化了适用于银染检测的DDRT-PCR方法。PCR扩增产物经6%变性聚丙烯酰胺凝胶垂直电泳分离后，银染能检测到多而清晰的条带。泳道中的条带数最少为40个，最多达80个，平均为60个，条带大小分布在100bp-900bp范围，银染的灵敏度为5pg/mm2。此方法操作简便快速，灵敏度高，重复性好。采用这个改良的的方法，分析了拟南芥野生型和ast突变型植株未成熟角果中16,000个cDNA扩增产物条带，从中筛选出28个差异条带。二次PCR扩增后，进一步筛选出10个差异表达的cDNA条带，其中6个是野生型特异表达的，4个是突变型特异表达的。对这10个差异片段进行测序。BLASTN分析表明，这10个差异表达的cDNA片段与数据库中花青苷生物合成途径中的结构基因和调节基因序列没有同源性，表明用DDRT-PCR的方法克隆特定的AST基因有一定的局限性。 利用图位克隆（map-based cloning）的策略，对拟南芥AST 基因进行克隆。根据拟南芥数据库中的SNPs (simple nucleotide polymophisms) 序列和插入/缺失多态性（insertion/deletion polymorphisms）序列，设计了一系列分子标记。利用这些分子标记，对600个F2代有突变表型的植株进行重组子筛选，完成了对拟南芥AST基因的精细作图，成功地将AST 基因定位到BAC克隆T13M11上。初步确定该BAC克隆中的基因T13M11.8 可能是AST基因。该基因的DNA序列长1432bp，含有6个外显子和5个内含子，编码的蛋白与花青苷生物合成途径中的二氢黄酮醇4-还原酶有较高的同源性。功能互补实验正在进行当中。

Research progress on algae of the microbial crusts in and and semiarid regions

Microbial crusts are attracting much interest in view of their possible uses in environmental conservation and ecological restoration of the and and semiarid regions. Because algae play an irreplaceable important role in the early formation and the strengthening of microbial crusts, they are paid much more attention to than other cryptogams. In this paper, an overview of the current knowledge on the fine structure and development of microbial crust, focusing on the algal biomass, vertical distribution, succession, influential factors on algae, cohesion of soil stabilization, cementing mechanism for soil particles and the microalgal extracellular polymers is given, with particular emphasis on the authors' researches, and some prospects are put forward as well.

The vertical microdistribution of cyanobacteria and green algae within desert crusts and the development of the algal crusts

Substantial amounts of algal crusts were collected from five different desert experimental sites aged 42, 34, 17, 8 and 4 years, respectively, at Shapotou ( China) and analyzed at a 0.1 mm microscale of depth. It was found that the vertical distribution of cyanobacteria and microalgae in the crusts was distinctly laminated into an inorganic-layer (ca. 0.00 - 0.02 mm, with few algae), an algae-dense-layer ( ca. 0.02 - 1.0 mm) and an algae-sparse-layer ( ca. 1.0 - 5.0 mm). It was interesting to note that in all crusts Scytonema javanicum Born et Flah ( or Nostoc sp., cyanobacterium), Desmococcus olivaceus (Pers ex Ach., green alga) Laundon and Microcoleus vaginatus Gom. ( cyanobacterium) dominated at the depth of 0.02 - 0.05, 0.05 - 0.1 and 0.1 - 1.0 mm, respectively, from the surface. Phormidium tenue Gom. ( or Lyngbya cryptovaginatus Schk., cyanobacterium) and Navicula cryptocephala Kutz.( or Hantzschia amphioxys (Ehr.) Grun. and N. cryptocephala together, diatom) dominated at the depth of 1.0 - 3.0 and 3.5 - 4.0 mm, respectively, of the crusts from the 42 and 34 year old sites. It was apparent that in more developed crusts there were more green algae and the niches of Nostoc sp., Chlorella vulgaris Beij., M. vaginatus, N. cryptocephala and fungi were nearer to the surface. If lichens and mosses accounted for less than 41.5% of the crust surface, algal biovolume was bigger when the crust was older, but the opposite was true when the cryptogams other than algae covered more than 70%. In addition to detailed species composition and biovolume, analyses of soil physicochemical properties, micromorphologies and mineral components were also performed. It was found that the concentration of organic matter and nutrients, electric conductivity, silt, clay, secondary minerals were higher and there were more micro-beddings in the older crusts than the less developed ones. Possible mechanisms for the algal vertical microdistribtion at different stages and the impact of soil topography on crust development are discussed. It is concluded that biomethods ( such as fine species distribution and biovolume) were more precise than mineralogical approaches in judging algal crust development and thus could be a better means to measure the potentiality of algal crusts in desert amelioration.

Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy

Anisotropic exchange splitting (AES) is induced by the joint effects of the electron-hole exchange interaction and the symmetry reduction in quantum wells and quantum dots. A model has been developed to quantitatively obtain the electron-hole exchange energy and the hole-mixing energy of quantum wells and superlattices. In this model, the AES and the degree of polarization can both be obtained from the reflectance difference spectroscopy. Thus the electron-hole exchange energy and the hole-mixing energy can be completely separated and quantitatively deduced. By using this model, a (001)5 nm GaAs/7 nm Al0.3Ga0.7As superlattice sample subjected to [110] uniaxial strains has been investigated in detail. The n=1 heavy-hole (1H1E) exciton can be analyzed by this model. We find that the AES of quantum wells can be linearly tuned by the [110] uniaxial strains. The small uniaxial strains can only influence the hole-mixing interaction of quantum wells, but have almost no contribution to the electron-hole exchange interaction. (c) 2008 American Institute of Physics.

Quantum Confinement and Electronic Properties of Rutile TiO2 Nanowires

The quantum confinement effect, electronic properties, and optical properties of TiO2 nanowires in rutile structure are investigated via first-principles calculations. We calculate the size- and shape-dependent band gap of the nanowires and fit the results with the function E-g = E-g(bulk) + beta/d(alpha). We find that the quantum confinement effect becomes significant for d < 25 angstrom, and a notable anisotropy exists that arises from the anisotropy of the effective masses. We also evaluate the imaginary part of the frequency-dependent dielectric function [epsilon(2)(omega)] within the electric-dipole approximation, for both the polarization parallel [epsilon(parallel to)(2)(omega)] and the perpendicular [epsilon 1/2(omega)] to the axial (c) direction. The band structure of the nanowires is calculated, with which the fine structure of epsilon(parallel to)(2)(omega) has been analyzed.

Pressure behaviour of the UV and green emission bands in ZnO micro-rods

The pressure behavior of the ultraviolet (UV) and green emission bands in ZnO tetrapod-like micro-rods has been investigated at 300 and 70 K, respectively. The pressure coefficient of the UV band at 300 K is 24.5 meV/GPa, consistent with that of the band gap of bulk ZnO. However, the pressure coefficient of the green band is 25 meV/GPa, far larger than previous literature reports. The green band in this work originates from Cu-related emission, as confirmed by the fine structure observed in the spectra at 10 K. The pressure coefficients of four phonon replicas of the free exciton emission (FX) at 70 K are 21.0, 20.2, 19.8, and 19.3 meV/GPa, respectively. The energy shift rate of the FX emission and the LO phonon energies is then determined to be 21.4 and 0.55 meV/GPa. The pressure coefficient of the neutral donor bound exciton ((DX)-X-0) transition is 20.5 meV/GPa, only 4% smaller than that of FX. This confirms that the (DX)-X-0 emission corresponds to excitons bound to neutral shallow donors. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Local environment of Er3+ in Er-doped Si nanoclusters embedded in SiO2 films

The local environment of Er3+ in heavily Er-doped (Er, 2.5 at. %) Si nanoclusters embedded in SiO2 films annealed at various temperatures was investigated by using the fluorescence-extended x-ray absorption fine structure spectroscopy. The results show that annealing caused a large effect on the local environment of Er3+ surrounded by O atoms and the 1.54 mu m photoluminescence intensity. The correlation between the local environment around Er3+ and the corresponding 1.54 mu m photoluminescence was discussed. (c) 2006 American Institute of Physics.

Optical transitions of positively charged excitons and biexcitons in single InAs quantum dots

National Basic Research Program of China 2007CB924904;Chinese Academy of Sciences KICX2.YW.W09-1

Temperature and pressure dependences of the copper-related green emission in ZnO microrods

We have investigated the temperature and pressure dependences of the copper-related green emission, which show fine structure at low temperature, from tetrapodlike ZnO microrods. The temperature dependence of the green emission energy follows the changes in the band gap from 10-200 K, but deviates from this behavior above 200 K. The pressure dependence of the copper-related green band (25 +/- 5 meV/GPa) is similar to that of the band gap of ZnO, and is larger than that reported previously for defect-related green emission in ZnO. (c) 2006 American Institute of Physics.

Exciton states of vertically stacked self-assembled InAs quantum disks in an axial magnetic field

We have studied the exciton states of vertically stacked self-assembled quantum disks within the effective mass approximation. The ground energies of a heavy-hole and a light-hole excitons as functions of the vertical disk separation are presented and discussed. The transition energy of a heavy-hole ground-state exciton is calculated and compared with the experimental data. The binding energies are discussed in terms of the probability of ground wave function. The ground energies of a heavy-hole and a light-hole excitons as functions of the applied axial magnetic field are calculated and the effect of disk size (radius of disks) on exciton energies is discussed. (c) 2006 Elsevier B.V. All rights reserved.

Enhancement of 1.53 mu m photoluminescence from spin-coated Er-Si-O (Er2SiO5) crystalline films by nitrogen plasma treatment

Er-Si-O (Er2SiO5) crystalline films are fabricated by the spin-coating and subsequent annealing process. The fraction of erbium is estimated to be 21.5 at% based on Rutherford backscattering measurement. X-ray diffraction pattern indicates that the Er-Si-O films are similar to Er2SiO5 compound in the crystal structure. The fine structure of room-temperature photoluminescence of Er3+-related transitions suggests that Er has a local environment similar to the Er-O-6 octahedron. Our preliminary results show that the intensity of 1.53 mu m emission is enhanced by a factor of seven after nitrogen plasma treatment by NH3 gas with subsequent post-annealing. The full-width at half-maximum of 1.53 pm emission peak increases from 7.5 to 12.9 nm compared with that of the untreated one. Nitrogen plasma treatment is assumed to tailor Er3+ local environment, increasing the oscillator strength of transitions and thus the excitation/emission cross-section. (c) 2005 Elsevier B.V. All rights reserved.

Characterization of CdSe and CdSe/CdS core/shell nanoclusters synthesized in aqueous solution

CdSe nanoclusters overcoated with CdS shell were prepared with macapoacetic acid as stabilizer. The optical properties of CdSe nanoclusters and the influence of CdS shell on the electronic structures of CdSe cores were studied by optical absorption, photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Based on PL and PLE results and the theoretical calculation on fine structure of bandedge exciton, a model of formation of excimer within the small clusters was proposed to explain the large Stokes shift of luminescence from absorption edge observed in PL results. (C) 2000 Elsevier Science B.V. All rights reserved.

Donor acceptor pair in molecular beam epitaxy grown GaN

We have recently found evidence of new donor acceptor pair (DAP) luminescence in molecular beam epitaxy (MBE) grown films. A variety of nominally undoped samples have been studied by photoluminescence (PL) over a temperature range of 5-300 K. The samples show intensive luminescence al energies of 3.404-3.413 eV varying with different sample at 5 K, as well as a fairly strong (DX)-X-0 line at low temperature. We attribute the Line at 3.404-3.413 eV to DAP recombination which is over 0.1 eV different from the well known DAP caused by ME-doping in GaN. The DAP line shows fine structure. it even predominates in one particular sample. The peak position shifts to higher energy with temperature increasing from 5 up to 70 K, and as the excitation laser intensity increases. The data are consistent with DAP luminescence involving an acceptor level of about 90 meV (presumably carbon) above the valence band edge in GaN. It is much shallower than the acceptor level of 250 meV produced by the p-type dopant Mg which is commonly used at present. (C) 1997 Elsevier Science S.A.

Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning

A new technique is reported for the rapid determination of interstitial oxygen in heavily Sb-doped silicon. This technique includes wafer thinning and low-temperature 10 K infrared measurement on highly thinned wafers. The fine structure of the interstitial oxygen absorption band around 1136 cm(-1) is obtained. Our results show that this method efficiently reduces free-carrier absorption interference, allowing a high reliability of measurement, and can be used at resistivities down to 1 x 10(-2) Omega cm for heavily Sb-doped silicon.