Local environment of Er3+ in Er-doped Si nanoclusters embedded in SiO2 films


Autoria(s): Bian LF; Zhang CG; Chen WD; Hsu CC; Shi TF
Data(s)

2006

Resumo

The local environment of Er3+ in heavily Er-doped (Er, 2.5 at. %) Si nanoclusters embedded in SiO2 films annealed at various temperatures was investigated by using the fluorescence-extended x-ray absorption fine structure spectroscopy. The results show that annealing caused a large effect on the local environment of Er3+ surrounded by O atoms and the 1.54 mu m photoluminescence intensity. The correlation between the local environment around Er3+ and the corresponding 1.54 mu m photoluminescence was discussed. (c) 2006 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/9764

http://www.irgrid.ac.cn/handle/1471x/64294

Idioma(s)

英语

Fonte

Bian, LF (Bian, Liu-Fang); Zhang, CG (Zhang, C. G.); Chen, WD (Chen, W. D.); Hsu, CC (Hsu, C. C.); Shi, TF (Shi, Tongfei) .Local environment of Er3+ in Er-doped Si nanoclusters embedded in SiO2 films ,APPLIED PHYSICS LETTERS,DEC 4 2006,89 (23):Art.No.231927

Palavras-Chave #半导体物理
Tipo

期刊论文