956 resultados para Nd-doped material


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3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 mu m-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H-2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 Omega center dot cm, 54 cm(2)/Vs, and 2.0x 10(17) cm(-3), respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10(-3) Omega center dot cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 mu m. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.

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We report a period continuously tunable, efficient, mid-infrared optical parametric oscillator (OPO) based on a fan-out periodically poled MgO-doped congruent lithium niobate (PPMgLN). The OPO is pumped by a Nd:YAG laser and a maximum idler output average power of 1.65 W at 3.93 mu m is obtained with a pump average power of 10.5 W, corresponding to the conversion efficiency of about 16% from the pump to the idler. The output spectral properties of the OPO with the fan-out crystal are analyzed. The OPO is continuously tuned over 3.78-4.58 mu m (idler) when fan-out periods are changed from 27.0 to 29.4 mu m. Compared with temperature tuning, fan-out period continuous tuning has faster tuning rate and wider tuning range.

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In this work, the electronic structure and magnetic coupling properties of Gd doped AlN have been investigated using first-principles method. We found that in the AlN:Gd system, due to the s-f coupling allowed by the symmetry, the exchange splitting of the conduction band is much larger than that of the valence band, which makes the electron-mediated ferromagnetism possible in this material. This property is also confirmed by the energy differences between anti-ferromagnetic and ferromagnetic phase for Al14Gd2N16 with different concentrations of electrons (holes), as well as by the calculated exchange constants. The result indicates that Gd-doped AlN is a promising candidate for the applications in future spintronic devices.

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Absorption spectra of YAlO3:Nd for the three crystallographic axes are investigated at room temperature, The spectral strengths indicate that the absorption coefficient of YAlO3:Nd is anisotropic. The anisotropy of the local electric field acting on the rare-earth ion in a laser crystal is considered, An extended Judd-Ofelt theory is applied to calculate the absorption cross sections and oscillator strengths of the electric-dipole transitions in the different principal directions. Three groups of the phenomenological parameters are derived from a least-squares-fitting procedure. We also analyze theoretically the anisotropy of the optical absorption of YAlO3:Nd crystal in detail. (C) 1997 American Institute of Physics.

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Semi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930 ℃ for 80h. The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP). The IP-SI InP wafers have good electrical parameters and uniformity of whole wafer. However, PP-SI InP wafers exhibit poor uniformity and electrical parameters, Photoluminescence which is subtle to deep defect appears in IP-annealed semi-insulating InP. Traps in annealed SI InP are detected by the spectroscopy of photo-induced current transient. The results indicate that there are fewer traps in IP-annealed undoped SI InP than those in as-grown Fe-doped and PP-undoped SI-undoped SI InP. The formation mechanism of deep defects in annealed undoped InP is discussed.

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Design of the typical laser diode side-pumped Nd:YAG rod system has been discussed using the conventional ray tracing method in this paper. Firstly introduce two basic matrices, refractional and translational matrix, described the transmission of nonparaxial light ray in the medium without concerning the absorption of light. And then, using those matrices, analyze the distribution of pump light in the crystal respectively under the condition of directly pumped system and indirectly pumped system with a cylindrical quartz rod as focusing lens. From the result of simulation, we compare the advantage and disadvantage of the two pumped method, and mainly consider how to select the diameter of the focus lens and cooling tube, indicate the effect of deionized water and cooling tube have on the pump light distribution in the active material. At last, make some conclusions about the side-pumped Nd:YAG laser system.

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The semi-insulating InP has been grown using ferrocene as a dopant source by low pressure MOCVD. Fe doped semiinsulating InP material whose resistivity is equal to 2.0x10(8)Omega*cm and the breakdown field is Beater than 4.0x10(4)Vcm(-1) has been achieved. It is found that the magnitude of resistivity increases with growing pressure enhancement under keeping TMIn, PH3, ferrocene (Fe(C5H5)(2)) flow constant at 620 degrees C growth temperature. Moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. It is estimated that active Fe doping efficiency; eta, is equal to 8.7x10(-4) at 20mbar growth pressure and 620 degrees C growth temperature by the comparison of calculated and experimental results.

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The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal.

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In this study, we investigated the electroluminescence (EL) mechanisms and processes of hole block material in the multilayer devices with Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1,10-phenanthroline) doped CBP (4,4'-N,N'-dicarbazolebiphenyl) as the light-emitting layer (EML). First, the hole block ability of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was experimentally confirmed by comparing the EL spectra. With increasing hole injection, BCP emission emerges and increases gradually due to the increasing hole penetration from EML into the hole block layer (HBL).

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A near-infrared luminescent macroporous material (PL-Macromaterial) and a near-infrared luminescent/magnetic bifunctional macroporous material (MML-Macromaterial) were synthesized by using polystyrene microspheres (PS) and Fe3O4 @polystyrene core-shell nanoparticles (Fe3O4@PS), respectively, as templates. Both the PL-Macromaterial and the M/PL-Macromaterial show the characteristic emission of the Er 3, ion. Moreover, the M/PL-Macromaterial possesses superparamagnetic properties at room temperature.

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A variety of uniform lanthanide orthoborates LnBO(3) (Ln = Gd, Nd, Sm, Eu, Tb, and Dy) microplates have been successfully prepared by a general and facile conversion method. One-dimensional (ID) lanthanide hydroxides were first prepared through a simple hydrothermal process. Subsequently, uniform LnBO(3) microplates were synthesized at the expense of the ID precursors during a hydrothermal conversion process. The whole process in this method was carried out in aqueous condition without the use of any organic solvents, surfactant, or catalyst. The as-obtained rare earth ions doped GdBO3 and TbBO3 microplates show strong light emissions with different colors coming from different activator ions under ultraviolet excitation or low-voltage electron beam excitation, which might find potential applications in fields such as light phosphor powders and advanced flat panel display devices.

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A large-scale process combined sonication with self-assembly techniques for the preparation of high-density gold nanoparticles supported on a [Ru(bpy)(3)](2+)-doped silica/Fe3O4 nanocomposite (GNRSF) is provided. The obtained hybrid nanomaterials containing Fe3O4 spheres have high saturation magnetization, which leads to their effective immobilization on the surface of an ITO electrode through simple manipulation by an external magnetic field (without the need of a special immobilization apparatus). Furthermore, this hybrid nanomaterial film exhibits a good and very stable electrochemiluminescence (ECL) behavior, which gives a linear response for tripropylamine (TPA) concentrations between 5 mu m and 0.21 mM, with a detection limit in the micromolar range. The sensitivity of this ECL sensor can be easily controlled by the amount of [Ru(bpy)(3)](2+) immobilized on the hybrid nanomaterials (that is, varying the amount of [Ru(bpy)(3)](2+) during GNRSF synthesis).

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Bifunctional nanoarchitecture has been developed by combining the magnetic iron oxide and the luminescent Ru(bpy)(3)(2+) encapsulated in silica. First, the iron oxide nanoparticles were synthesized and coated with silica, which was used to isolate the magnetic nanoparticles from the outer-shell encapsulated Ru(bpy)(3)(2+) to prevent luminescence quenching. Then onto this core an outer shell of silica containing encapsulated Ru(bpy)(3)(2+) was grown through the Stober method. Highly luminescent Ru(bpy)(3)(2+) serves as a luminescent marker, while magnetic Fe3O4 nanoparticles allow external manipulation by a magnetic field. Since Ru(bpy)(3)(2+) is a typical electrochemiluminescence (ECL) reagent and it could still maintain such property when encapsulated in the bifunctional nanoparticle, we explored the feasibility of applying the as-prepared nanostructure to fabricating an ECL sensor; such method is simple and effective. We applied the prepared ECL sensor not only to the typical Ru(bpy)(3)(2+) co-reactant tripropylamine (TPA), but also to the practically important polyamines. Consequently, the ECL sensor shows a wide linear range, high sensitivity, and good stability.

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A new material (IL923SGs) composed of ionic liquids and trialkyl phosphine oxides (Cyanex 923) for Y(III) uptake was prepared via a sol-gel method. The hydrophobic ionic liquid 1-octyl-3-methylimidazolium hexafluorophosphate (C(8)mim(+)PF(6)-) was used as solvent medium and pore templating material. The extraction of Y(III) by IL923SGs was mainly due to the complexation of metal ions with Cyanex 923 doped in the solid silica. Ionic liquid was stably doped into the silica gel matrix providing a diffusion medium for Cyanex 923, and this will result in higher removal efficiencies and excellent stability for metal ions separation. IL923SGs were also easily regenerated and reused in the subsequent removal of Y(III) in four cycles.