Dimmable electronic ballast with high power-factor SEPIC preregulator, for multiple tubular fluorescent lamps

An electronic ballast for multiple tubular fluorescent lamps is presented in this paper. The proposed structure features high power-factor, dimming capability, and soft-switching to the semiconductor devices operated in high frequencies. A Zero-Current-Switching - Pulse-Width-Modulated (ZCS-PWM) SEPIC converter composes the rectifying stage, controlled by the instantaneous average input current technique, performing soft-commutations and high input power factor. Regarding the inverting stage, it is composed by a classical resonant Half-Bridge converter, associated to Series Parallel-Loaded Resonant (SPLR) filters. The dimming control technique employed in this Half-Bridge inverter is based on the phase-shift in the current processed through the sets of filter + lamp. In addition, experimental results are shown in order to validate the developed analysis.

Bridgeless interleaved boost PFC converter with variable duty cycle control

This paper proposes a bridgeless boost interleaved PFC (power factor correction) converter with variable duty cycle control. The application of bridgeless technique causes reduction of conduction losses, while the interleaving technique of converters cells allows division of efforts in semiconductor devices and reduction of weight and volume of the input EMI filter. The use of variable duty cycle control has the functions of regulating the output voltage and eliminating the low order harmonic components that appears in the input current of the common interleaved power factor converters working in Discontinuous Conduction Mode (DCM). The simulation results of the proposed converter presented high power factor and a good transient response in relation to the output voltage regulation in presence of high load variations and supply voltage variations. © 2011 IEEE.

Experimental evaluation of the bridgeless interleaved boost PFC converter

This paper presents theoretical evaluation and experimental results to the proposed bridgeless interleaved boost PFC (power factor correction) converter. The application of bridgeless technique causes reduction of conduction losses, while the interleaving technique of the converter cells allows division of the current stress in semiconductor devices and reduction of weight and volume of the input EMI filter. In each cell of the converter, the inductor current operates in discontinuous conduction mode (DCM), which eliminates turn-on switching losses and the effects of reverse recovery in semiconductors, increasing the efficiency of the converter. The experimental results show the power factor of 0.96 for employed voltage ratio and an efficiency of 95.2 % for nominal load conditions. © 2012 IEEE.

Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (1 0 0) and (0 0 1) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 nm and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. © 2013 Elsevier Ltd and Techna Group S.r.l.

Projeto de um oscilador controlado por corrente com configuração em anel, tecnologia CMOS e melhoria no ruído de fase

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Investigação de propriedades de filmes finos de Al2O3 para aplicação em dispositivos eletrônicos

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Medidas de ressonância de spin eletrônico (RSE) em polianilina dopada com plastificante e de condutividade a.c. e RSE em óxidos

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Pré-regulador retificador entrelaçado (Interleaved) ZCS-FM boost, com controle digital através de dispositivo FPGA e linguagem VHDL

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Micro-inverter for integrated grid-tie photovoltaic module using resonant controller

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Anderson localization and momentum-space entanglement

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Geometry effects on the electronic properties of multi-open dots structures

In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises.

Subband mixing inducing negative resistance

A new double channel field-effect structure based on delta-doping technology is proposed Resonant tunneling between the channels is employed to control the transport along the interface plane. A realistic simulation is performed for several temperatures. We solve the Schrodinger and Poisson equations self-consistently and have found that a large peak-to-valley ratio in the current-voltage characteristic occurs at the whole range of temperature investigated this effect indicates the potential application of this phenomenon for switching devices, where the transversal conductivity can be controlled due to the coupling between states belonging to different channels.

Frequency measurements of CD3OH and (CH3OH)-C-13 optically pumped far-infrared laser lines

We report the frequency measurements of 18 optically pumped far-infrared (FIR) laser lines generated from CD3OH and (CH3OH)-C-13. We use the heterodyne technique of mixing FIR laser radiations and microwave radiation on a metal-insulator-metal point-contact tunnel diode to determine the FIR laser frequencies. Two FIR laser systems, consisting of CO2 waveguide pump lasers and Fabry-Perot FIR laser cavities, were used as optical sources. (C) 1997 Optical Society of America.

Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM

One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of magnitude by reducing the body-junction electric field. However, the retention time distribution, which is mainly caused by the generation-recombination center density variation, remains similar.

Charge dynamics in half-filled Hubbard chains with finite on-site interaction

We study the charge dynamic structure factor of the one-dimensional Hubbard model with finite on-site repulsion U at half-filling. Numerical results from the time-dependent density matrix renormalization group are analyzed by comparison with the exact spectrum of the model. The evolution of the line shape as a function of U is explained in terms of a relative transfer of spectral weight between the two-holon continuum that dominates in the limit U -> infinity and a subset of the two-holon-two-spinon continuum that reconstructs the electron-hole continuum in the limit U -> 0. Power-law singularities along boundary lines of the spectrum are described by effective impurity models that are explicitly invariant under spin and eta-spin SU(2) rotations. The Mott-Hubbard metal-insulator transition is reflected in a discontinuous change of the exponents of edge singularities at U = 0. The sharp feature observed in the spectrum for momenta near the zone boundary is attributed to a van Hove singularity that persists as a consequence of integrability.