Geometry effects on the electronic properties of multi-open dots structures
| Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
|---|---|
| Data(s) |
18/03/2015
18/03/2015
01/11/1998
|
| Resumo |
In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises. |
| Formato |
2361-2364 |
| Identificador |
http://dx.doi.org/10.1109/16.726657 Ieee Transactions On Electron Devices. New York: Ieee-inst Electrical Electronics Engineers Inc, v. 45, n. 11, p. 2361-2364, 1998. 0018-9383 http://hdl.handle.net/11449/117065 10.1109/16.726657 WOS:000076754800015 |
| Idioma(s) |
eng |
| Publicador |
Ieee-inst Electrical Electronics Engineers Inc |
| Relação |
Ieee Transactions On Electron Devices |
| Direitos |
closedAccess |
| Palavras-Chave | #quantum dots #quantum effect semiconductor devices #quantum wires #resonant tunneling devices |
| Tipo |
info:eu-repo/semantics/article |
